ABSTRACT
Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJ)s with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner-Wohlfarth (SW) model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of -3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and -311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 µ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and -260 for tensile and compressive stresses, respectively, under a -3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.
ABSTRACT
We describe an atomic force microscope (AFM) for the characterization of self-sensing tunneling magnetoresistive (TMR) cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 µm(3) is mounted on a large-area scanner with a scan range of 800 × 800 × 35 µm(3). In order to characterize TMR sensors on AFM cantilevers as deflection sensors, the AFM is equipped with a laser beam deflection setup to measure the deflection of the cantilevers independently. The instrument is based on a commercial AFM controller and capable to perform large-area scanning directly without stitching of images. Images obtained on different samples such as calibration standard, optical grating, EPROM chip, self-assembled monolayers and atomic step-edges of gold demonstrate the high stability of the nested scanner design and the performance of self-sensing TMR cantilevers.
ABSTRACT
The design and fabrication of a plasmonic black absorber with almost 100% absorbance spanning a broad range of frequencies from ultraviolet (UV) to the near infrared (NIR) is demonstrated. The perfect plasmonic absorber is achieved by a combination of a metal film with suitable metal/dielectric nanocomposites. Our fabrication technique is simple, versatile, cost-effective, and compatible with current industrial methods for solar absorber production.
