Displacement measurement that uses transient photoelectromotive force effects in CdTe:V with frequency-modulated lasers.

A new method of displacement measurement that uses the transient photoelectromotive force effects that arise in semiconductors illuminated by two frequency-modulated lasers is proposed and demonstrated experimentally. A height resolution of 0.85 microm was achieved experimentally; theoretical analysis charts the path toward eventual improvement of this resolution.

Amplified reflection through anisotropic four-wave mixing in BaTiO(3).

We have demonstrated cw non-phase-conjugate amplified reflection in single-crystal BaTiO(3) using anisotropic four-wave mixing. We show that the reflected beam is polarized orthogonally to the readout beam and that it is a true reflection of the image beam, not a phase conjugate. The maximum reflectivity measured was approximately 200%.