miR-135a inhibits glioma cell proliferation and invasion by directly targeting FOXO1.

OBJECTIVE: To investigate the potential function of miR-135a in glioma. PATIENTS AND METHODS: A total of 50 pairs of glioma tissue samples and para-carcinoma tissue samples were collected. Human glioma cell line (U251) and normal human astrocyte (NHA) were cultured. The expression of RNA and protein was detected by quantitative Real time-polymerase chain reaction (qRT-PCR) and Western blot, respectively. Cell proliferation assay and transwell assay were used to detect the activities of proliferation and invasion. Luciferase reporter assays were carried out to determine the binding efficiency between forkhead box O1 (FOXO1) and miR-135a in U251 cells. RESULTS: qRT-PCR results showed that miR-135a expression was significantly reduced while FOXO1 was up-regulated in glioma tissues. miR-135a overexpression in U251 cells could prominently inhibit proliferation and invasion according to the transwell assays. Moreover, FOXO1 was recognized as the target for miR-135a and may partially reverse the functions of miR-135a in U251 cells. CONCLUSIONS: We showed that miR-135a inhibits glioma cell proliferation and invasion by down-regulating the target gene FOXO1.

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor.

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

High aspect ratio SiNW arrays with Ag nanoparticles decoration for strong SERS detection.

Well-ordered silicon nanowires (SiNWs) are applied as surface-enhanced Raman scattering (SERS) substrates. Laser interference lithography is used to fabricate large-area periodic nanostructures. By controlling the reaction time of metal assisted chemical etching, various aspect ratios of SiNWs are generated. Ag nanoparticles are decorated on the substrates via redox reaction to allow a good coverage of Ag over the SiNWs. As the height of the SiNWs increases, the light scattering inside the structures is enhanced. The number of the probing molecules within the detection volume is increased as well. These factors contribute to stronger light-matter interaction and thus lead to higher SERS signal intensity. However, the light trapping effect is more significant for higher SiNWs, which prevents the detection of the SERS signals. An optimized aspect ratio ∼5:1 (1 µm height and 200 nm width) for the SiNW array is found. The well-ordered SiNWs demonstrate better SERS signal intensity and uniformity than the randomly arranged SiNWs.

Nano-antenna in a photoconductive photomixer for highly efficient continuous wave terahertz emission.

We report highly efficient continuous-wave terahertz (THz) photoconductive antenna based photomixer employing nano-gap electrodes in the active region. The tip-to-tip nano-gap electrode structure provides strong THz field enhancement and acts as a nano-antenna to radiate the THz wave generated in the active region of the photomixer. In addition, it provides good impedance matching to the THz planar antenna and exhibits a lower RC time constant, allowing more efficient radiation especially at the higher part of the THz spectrum. As a result, the output intensity of the photomixer with the new nano-gap electrode structure in the active region is two orders of magnitude higher than that of a photomixer with typical interdigitated electrodes. Significant improvement in the THz emission bandwidth was also observed. An efficient continuous wave THz source will greatly benefit compact THz system development for high resolution THz spectroscopy and imaging applications.

Microelectromechanical Maltese-cross metamaterial with tunable terahertz anisotropy.

Dichroic polarizers and waveplates exploiting anisotropic materials have vast applications in displays and numerous optical components, such as filters, beamsplitters and isolators. Artificial anisotropic media were recently suggested for the realization of negative refraction, cloaking, hyperlenses, and controlling luminescence. However, extending these applications into the terahertz domain is hampered by a lack of natural anisotropic media, while artificial metamaterials offer a strong engineered anisotropic response. Here we demonstrate a terahertz metamaterial with anisotropy tunable from positive to negative values. It is based on the Maltese-cross pattern, where anisotropy is induced by breaking the four-fold symmetry of the cross by displacing one of its beams. The symmetry breaking permits the excitation of a Fano mode active for one of the polarization eigenstates controlled by actuators using microelectromechanical systems. The metamaterial offers new opportunities for the development of terahertz variable waveplates, tunable filters and polarimetry.

Ultrasmooth silver thin film on PEDOT:PSS nucleation layer for extended surface plasmon propagation.

Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) layers are used as the nucleation (seed) layer to reduce surface roughness of the overlying silver (Ag). The technique leads to ultrasmooth Ag thin films with a minimum surface roughness of 0.8 nm. The mechanism contributing to the improvement is explained on the basis of better wetting of Ag on PEDOT:PSS, and properties of the nucleation layer on the aspects of surface energy, surface adhesive force, and surface morphology influencing Ag wetting and growth pattern are being discussed. The surface plasmon resonance (SPR) shows significant improvement, in terms of the Figure of Merits (FOM), as the surface roughness on Ag films is reduced. A lower light scattering and longer plasmon propagation of maximum 15.3 µm are also realized on a smoother Ag surface. The results indicate great potential on the application of combined PEDOT:PSS/Ag structure as an effective and economically feasible design solution for plasmonic and optical metamaterials devices.

Deterministic relief dielectric structures to realize phase modulation of surface-plasmon polaritons.

We propose a modified effective-refractive-index model for the design of relief dielectric structures on a metal surface to realize phase modulation of surface-plasmon polaritons (SPPs). In this model, the length of the dielectric structure is optimized to reach phase shifting between the SPP waves transmitted through dielectric structure and those directly propagated with the consideration of SPP losses. Specifically, a one-dimensional dielectric Fresnel zone plate is designed by employing the proposed model to demonstrate phase modulation of SPPs for the highest focusing efficiency.