ABSTRACT
The North American distributional potential of the recently invaded tick, Haemaphysalis longicornis, was estimated using occurrence data from its geographic range in other parts of the world and relevant climatic data sets. Several hundred candidate models were built using a correlative maximum entropy approach, and best-fitting models were selected based on statistical significance, predictive ability, and complexity. The median of the best-fitting models indicates a broad potential distribution for this species, but restricted to three sectors-the southeastern United States, the Pacific Northwest, and central and southern Mexico.
Subject(s)
Animal Distribution , Introduced Species , Ixodidae/physiology , Tick Infestations , Animals , North AmericaABSTRACT
We have studied the effect of oxidation on the propagation loss and surface roughness of silicon-on-oxidized-porous-silicon strip waveguides fabricated using proton-beam irradiation and electrochemical etching. A thin thermal oxide is formed around the core of the waveguide, enabling the symmetric reduction of core size and roughness on all sides. Significant loss reduction from about 10 dB/cm to 1 dB/cm has been obtained in TE and TM polarizations after oxidation smoothening of both the bottom and the sidewalls by 20 nm. This corresponds well with simulations using the beam-propagation method that show significant contributions from both surfaces.
ABSTRACT
We have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1x10(15)/cm(2) after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1+/-0.4 dB/cm and 1.2+/-0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications.
ABSTRACT
At certain tilt alignments between a MeV proton beam and a planar channeling direction, a single interface lattice rotation within a crystal can result in a lower rate of dechanneling than at planar alignment in a perfect crystal. Such planar channeling enhancement arises when the beam passes through a layer thickness which is a half-multiple of the oscillation wavelength and then encounters a small interface rotation which is matched to the beam tilt angle. The beam is projected into the center of the phase space ellipse below the interface, resulting in certain trajectories undergoing a reduction in their transverse energy, in a manner analogous to stochastic cooling or atom laser cooling.
ABSTRACT
High spatial resolution, high-contrast transmission channeling images of stacking faults in silicon have been produced using a beam of 2 MeV protons focused to a spot size of 60 nm. Over a narrow range of beam tilts to the (011) planes, up to ten periodic intensity oscillations are observed, providing evidence of a long-range coherency of the planar channeled trajectories. This behavior is characterized using Monte Carlo computer simulations, and a phase-space model of planar channeled ion interactions with stacking faults is developed which incorporates all observed channeling and blocking phenomena.