Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001) SiO(2) interface.

Carrier-induced screening of the dc electric field at the Si(001)-SiO(2) interface is observed by intensity-dependent and femtosecond-time-resolved second-harmonic spectroscopy. The screening occurs on a time scale of ~?(p)(-1) , the reciprocal plasma frequency of the generated carriers.