1.
Adv Mater
; 28(46): 10275-10281, 2016 Dec.
Article
in English
| MEDLINE
| ID: mdl-27605061
ABSTRACT
A very high hole mobility of 15 cm2 V-1 s-1 along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoOx hole-injection layers.