CoNiSe2 Nanostructures for Clean Energy Production.

Comparative investigation of the electrochemical oxygen evolution reaction (OER) activity for clean energy production was performed by fabricating three different electrodes, namely, NiSe2, CoSe2, and CoNiSe2, synthesized by hydrothermal treatment. Cubic, orthorhombic, and hexagonal structures of NiSe2, CoSe2, and CoNiSe2 were confirmed by X-ray diffraction (XRD) and also by other characterization studies. Perfect nanospheres, combination of distorted nanospheres and tiny nanoparticles, and sharp-edge nanostructures of NiSe2, CoSe2, and CoNiSe2 were explored by surface morphological images. Higher OER activity of the binary CoNiSe2 electrode was achieved as 188 mA/g current density with a comparatively low overpotential of 234 mV along with higher conductivity and low charge transfer resistance when compared to its unary NiSe2 and CoSe2 electrodes. A low Tafel slope value of 82 mV/dec was also achieved for the same binary CoNiSe2 electrode in a half-cell configuration. The overall 100% retention achieved for all of the fabricated electrodes in a stability test of OER activity suggested that the excellent optimum condition was obtained during the synthesis. This could definitely be a revelation in the synthesis of novel binary combinations of affordable metal selenides for clean energy production.

Improved photovoltaic performance of inverted polymer solar cells through a sol-gel processed Al-doped ZnO electron extraction layer.

We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C(71)-butyric acid methyl ester (PC(70)BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10(-3) Ω·cm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC(70)BM), the power conversion efficiency increased from 3.7 to 5.6%.