Crossover from gapped-to-gapless Dirac surface states in magnetic topologicalinsulator MnBi2Te4.

Intrinsic magnetic topological insulators (MTI) host exotic topological phases such as quantized anomalous Hall insulating phase, arising due to the large magnetic exchange gap. However, the interplay of magnetism and topology in these systems in different temperature regimes remains elusive. In this work, we present the logarithmic temperature-dependence of conductivity for sub-100 nm thick exfoliated flakes of MTI MnBi2Te4 in the presence of out-of-plane magnetic fields and extracted the linear slope, κ. We observed a characteristic change, ∆κ ∼ -0.5 in the low-temperature regime, indicating the gapped Dirac surface state according to Lu-Shen theory. We also report the recovery of topological properties in the system via the weak-antilocalization (WAL) effect in the vicinity of antiferromagnetic to paramagnetic transition and in the paramagnetic regime. Hikami-Larkin-Nagaoka (HLN) analysis suggested the presence of topological surface states. Therefore, our study helps in understanding how intrinsic magnetism masks topological properties in an MTI as long as magnetic ordering persists. .

Orthorhombic charge density wave on the tetragonal lattice of EuAl4.

EuAl4 possesses the BaAl4 crystal structure type with tetragonal symmetry I4/mmm. It undergoes a charge density wave (CDW) transition at T CDW = 145 K and features four consecutive antiferromagnetic phase transitions below 16 K. Here we use single-crystal X-ray diffraction to determine the incommensurately modulated crystal structure of EuAl4 in its CDW state. The CDW is shown to be incommensurate with modulation wave vector q = (0,0,0.1781 (3)) at 70 K. The symmetry of the incommensurately modulated crystal structure is orthorhombic with superspace group Fmmm(00σ)s00, where Fmmm is a subgroup of I4/mmm of index 2. Both the lattice and the atomic coordinates of the basic structure remain tetragonal. Symmetry breaking is entirely due to the modulation wave, where atoms Eu and Al1 have displacements exclusively along a, while the fourfold rotation would require equal displacement amplitudes along a and b. The calculated band structure of the basic structure and interatomic distances in the modulated crystal structure both indicate the Al atoms as the location of the CDW. The tem-per-ature dependence of the specific heat reveals an anomaly at T CDW = 145 K of a magnitude similar to canonical CDW systems. The present discovery of orthorhombic symmetry for the CDW state of EuAl4 leads to the suggestion of monoclinic instead of orthorhombic symmetry for the third AFM state.

Observation of Standing Spin Waves in a van der Waals Magnetic Material.

Spin waves are studied for data storage, communication, and logic circuits in the field of spintronics based on their potential to substitute electrons. The recent discovery of magnetism in 2D systems such as monolayer CrI3 and Cr2 Ge2 Te6 has led to a renewed interest in such applications of magnetism in the 2D limit. Here, direct evidence of standing spin waves is presented along with the uniform precessional resonance modes in the van der Waals magnetic material, CrCl3 . This is the first direct observation of standing spin-wave modes, set up along a thickness of 20 mm, in a van der Waals material. Standing spin waves are detected in the vicinity of both branches, optical and acoustic, of the antiferromagnetic resonance. Magnon-magnon coupling and softening of resonance modes with temperature enable extraction of interlayer exchange field as a function of temperature.

On-Demand Local Modification of High-Tc Superconductivity in Few Unit-Cell Thick Bi2 Sr2 CaCu2 O8+δ.

High-temperature superconductors (HTSs) are important for potential applications and for understanding the origin of strong correlations. Bi2 Sr2 CaCu2 O8+δ (BSCCO), a van der Waals material, offers a platform to probe the physics down to a unit-cell. Guiding the flow of electrons by patterning 2DEGS and oxide heterostructures has brought new functionality and access to new science. Similarly, modifying superconductivity in HTS locally, on a small length scale, is of immense interest for superconducting electronics. A route to modify superconductivity locally by depositing metal on the surface is reported here by transport studies on few unit-cell thick BSCCO. Deposition of chromium (Cr) on the surface over a selected area of BSCCO results in insulating behavior of the underlying region. Cr locally depletes oxygen in CuO2 planes and disrupts the superconductivity in the layers below. This technique of modifying superconductivity is suitable for making sub-micrometer superconducting wires and more complex superconducting devices.

Magnetotransport properties of noncentrosymmetric CaAgBi single crystal.

We report on the single crystal growth and transport properties of a topological semimetal CaAgBi which crystallizes in the hexagonal ABC-type structure with the non-centrosymmetric space group P63 mc (No. 186). The transverse magnetoresistance measurements with current in the basal plane of the hexagonal crystal structure reveal a value of about 30% for I∥[10̄0] direction and about 50% for I∥[1̅10] direction at 10 K in an applied magnetic field of 14 T. The magnetoresistance shows a cusp-like behavior in the low magnetic field region, suggesting the presence of weak antilocalization effect for temperatures less than 100 K. The Hall measurements reveal that predominant charge carriers are p-type, exhibiting a linear behavior at high fields. The magnetoconductance of CaAgBi is analyzed based on the modified Hikami-Larkin-Nagaoka model. Our first-principle calculations within a density-functional theory framework reveal that the Fermi surface of CaAgBi consists of both the electron and hole pockets and the size of the hole pocket is much larger than electron pockets suggesting the dominant p-type carriers in accordance with our experimental results.

Growth of high-quality Bi2Sr2 CaCu2O8+δ whiskers and electrical properties of resulting exfoliated flakes.

In this work, we demonstrate a simple technique to grow high-quality whiskers of Bi2 Sr2 CaCu2 O8+δ - a high T c superconductor. Structural analysis shows the single-crystalline nature of the grown whiskers. To probe electrical properties, we exfoliate these whiskers into thin flakes (~50 nm thick) using the scotch-tape technique and develop a process to realize good electrical contacts. We observe a superconducting critical temperature, T c , of 86 K. We map the evolution of the critical current as a function of temperature. With 2-D materials emerging as an exciting platform to study low-dimensional physics, our work paves the way for future studies on two-dimensional high-T c superconductivity.

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area growth of GaN on CVD MoS2. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.

Orientational coupling between the vortex lattice and the crystalline lattice in a weakly pinned Co(0.0075)NbSe2 single crystal.

We report experimental evidence of strong orientational coupling between the crystal lattice and the vortex lattice in a weakly pinned Co-doped NbSe2 single crystal through direct imaging using low temperature scanning tunneling microscopy/spectroscopy. When the magnetic field is applied along the six-fold symmetric c-axis of the NbSe2 crystal, the basis vectors of the vortex lattice are preferentially aligned along the basis vectors of the crystal lattice. The orientational coupling between the vortex lattice and crystal lattice becomes more pronounced as the magnetic field is increased. This orientational coupling enhances the stability of the orientational order of the vortex lattice, which persists even in the disordered state at high fields where dislocations and disclinations have destroyed the topological order. Our results underpin the importance of crystal lattice symmetry on the vortex state phase diagram of weakly pinned type II superconductors.

Disordering of the vortex lattice through successive destruction of positional and orientational order in a weakly pinned Co0.0075NbSe2 single crystal.

The vortex lattice in a Type II superconductor provides a versatile model system to investigate the order-disorder transition in a periodic medium in the presence of random pinning. Here, using scanning tunnelling spectroscopy in a weakly pinned Co(0.0075)NbSe(2) single crystal, we show that the vortex lattice in a 3-dimensional superconductor disorders through successive destruction of positional and orientational order, as the magnetic field is increased across the peak effect. At the onset of the peak effect, the equilibrium quasi-long range ordered state transforms into an orientational glass through the proliferation of dislocations. At a higher field, the dislocations dissociate into isolated disclination giving rise to an amorphous vortex glass. We also show the existence of a variety of additional non-equilibrium metastable states, which can be accessed through different thermomagnetic cycling.

Synthesis, crystal and electronic structure of the quaternary magnetic EuTAl4Si2 (T = Rh and Ir) compounds.

Single crystals of the quaternary europium compounds EuRhAl4Si2 and EuIrAl4Si2 were synthesized by using the Al-Si binary eutectic as a flux. The structure of the two quaternary compounds has been refined by single crystal X-ray diffraction. Both compounds are stoichiometric and adopt an ordered derivative of the ternary KCu4S3 structure type (tetragonal tP8, P4/mmm). The two compounds reported here represent the first example of a quaternary and truly stoichiometric 1:1:4:2 phase crystallizing with this structure type. In light of our present results, the structure of the BaMg4Si3 compound given in literature as representing a new prototype is actually isotypic with the KCu4S3 structure. Local spin density approximation including the Hubbard U parameter (LSDA + U) calculations show that Eu ions are in the divalent state, with a significant hybridization between the Eu 5d, Rh (Ir) 4d (5d), Si 3p and Al 3p states. Magnetic susceptibility measured along the [001] direction confirms the divalent nature of the Eu ions in EuRhAl4Si2 and EuIrAl4Si2, which order magnetically near ∼11 and ∼15 K, respectively.

Plasmon mode modifies the elastic response of a nanoscale charge density wave system.

The elastic response of suspended NbSe(3) nanowires is studied across the charge density wave phase transition. The nanoscale dimensions of the resonator lead to a large resonant frequency (~10-100 MHz), bringing the excited phonon frequency in close proximity of the plasmon mode of the electronic condensate-a parameter window not accessible in bulk systems. The interaction between the phonon and plasmon modes strongly modifies the elastic properties at high frequencies. This is manifested in the nanomechanics of the system as a sharp peak in the temperature dependence of the elastic modulus (relative change of 12.8%) in the charge density wave phase.

The effect of chemical substitution in Rh(17)S(15).

Rh(17)S(15) has recently been shown to be a strongly correlated superconductor with a transition temperature of 5.4 K. In order to understand the nature of the strong correlations we study the effect of replacement of some of the Rh and S atoms by other elements such as Fe, Pd, Ir and Ni on the Rh side and Se on the S side in this work. We find that while replacements of Ir and Se lower the transition temperature considerably, those of Fe, Pd and Ni destroy the superconductivity down to 1.5 K. The resistivity data for these doped samples show a minimum which is presumably disorder induced. A reduction of T(c) is always accompanied by a reduction of electron correlations, as deduced from heat capacity and magnetization data. Interestingly, the Fe doped sample shows evidence of spin glass formation at low temperatures.