Delayed Lubricant Depletion of Slippery Liquid Infused Porous Surfaces Using Precision Nanostructures.

Slippery liquid infused porous surfaces (SLIPS) are an important class of repellent materials, comprising micro/nanotextures infused with a lubricating liquid. Unlike superhydrophobic surfaces, SLIPS do not rely on a stable air-liquid interface and thus can better manage low surface tension fluids, are less susceptible to damage under physical stress, and are able to self-heal. However, these collective properties are only efficient as long as the lubricant remains infused, which has proved challenging. We hypothesized that, in comparison to a nanohole and nanopillar morphology, the "hybrid" morphology of a hole within a nanopillar, namely a nanotube, would be able to retain and redistribute lubricant more effectively, owing to capillary forces trapping a reservoir of lubricant within the tube, while lubricant between tubes can facilitate redistribution to depleted areas. By virtue of recent fabrication advances in spacer defined intrinsic multiple patterning (SDIMP), we fabricated an array of silicon nanotubes and equivalent arrays of nanoholes and nanopillars (pitch, 560 nm; height, 2 µm). After infusing the nanostructures (prerendered hydrophobic) with lubricant Krytox 1525, we probed the lubricant stability under dynamic conditions and correlated the degree of the lubricant film discontinuity to changes in the contact angle hysteresis. As a proof of concept, the durability test, which involved consecutive deposition of droplets onto the surface amounting to 0.5 L, revealed 2-fold and 1.5-fold enhancements of lubricant retention in nanotubes in comparison to nanopillars and nanoholes, respectively, showing a clear trajectory for prolonging the lifetime of a slippery surface.

Improved quality of InSb-on-insulator microstructures by flash annealing into melt.

Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 µm after the process. We further see a 100× improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm2 V-1 s-1 making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.

Integrating diamond with GaN high electron mobility transistors (HEMTs) improves thermal management, ultimately increasing the reliability and performance of high-power high-frequency radio frequency amplifiers. Conventionally, an amorphous interlayer is used before growing polycrystalline diamond onto GaN in these devices. This layer contributes significantly to the effective thermal boundary resistance (TBReff) between the GaN HEMT and the diamond, reducing the benefit of the diamond heat spreader. Replacing the amorphous interlayer with a higher thermal conductivity crystalline material would reduce TBReff and help to enable the full potential of GaN-on-diamond devices. In this work, a crystalline Al0.32Ga0.68N interlayer has been integrated into a GaN/AlGaN HEMT device epitaxy. Two samples were studied, one with diamond grown directly on the AlGaN interlayer and another incorporating a thin crystalline SiC layer between AlGaN and diamond. The TBReff, measured using transient thermoreflectance, was improved for the sample with SiC (30 ± 5 m2 K GW-1) compared to the sample without (107 ± 44 m2 K GW-1). The reduced TBReff is thought to arise from improved adhesion between SiC and the diamond compared to the diamond directly on AlGaN because of an increased propensity for carbide bond formation between SiC and the diamond. The stronger carbide bonds aid transmission of phonons across the interface, improving heat transport.

Spacer-Defined Intrinsic Multiple Patterning.

Periodic nanotube arrays render enhanced functional properties through their interaction with light and matter, but to reach optimal performance for technologically prominent applications, such as wettability or photonics, structural fine-tuning is essential. Nonetheless, a universal and scalable method providing independent dimension control, high aspect ratios, and the prospect of further structural complexity remains unachieved. Here, we answer this need through an atomic layer deposition (ALD)-enabled multiple patterning. Unlike previous methods, the ALD-deposited spacer is applied directly on the prepatterned target substrate material, serving as an etching mask to generate a multitude of tailored nanotubes. By concept iteration, we further realize concentric and/or binary nanoarrays in a number of industrially important materials such as silicon, glass, and polymers. To demonstrate the achieved quality and applicability of the structures, we probe how nanotube fine-tuning induces broadband antireflection and present a surface boasting extremely low reflectance of <1% across the wavelength range of 300-1050 nm.

Diabolical points in coupled active cavities with quantum emitters.

In single microdisks, embedded active emitters intrinsically affect the cavity modes of the microdisks, resulting in trivial symmetric backscattering and low controllability. Here we demonstrate macroscopic control of the backscattering direction by optimizing the cavity size. The signature of the positive and negative backscattering directions in each single microdisk is confirmed with two strongly coupled microdisks. Furthermore, diabolical points are achieved at the resonance of the two microdisks, which agrees well with theoretical calculations considering the backscattering directions. Diabolical points in active optical structures pave the way for an implementation of quantum information processing with geometric phase in quantum photonic networks.

Enhanced Strong Interaction between Nanocavities and p-shell Excitons Beyond the Dipole Approximation.

Large coupling strengths in exciton-photon interactions are important for the quantum photonic network, while strong cavity-quantum dot interactions have been focused on s-shell excitons with small coupling strengths. Here we demonstrate strong interactions between cavities and p-shell excitons with a great enhancement by the in situ wave-function control. The p-shell excitons are demonstrated with much larger wave-function extents and nonlocal interactions beyond the dipole approximation. Then the interaction is tuned from the nonlocal to the local regime by the wave function shrinking, during which the enhancement is obtained. A large coupling strength of 210 µeV has been achieved, indicating the great potential of p-shell excitons for coherent information exchange. Furthermore, we propose a distributed delay model to quantitatively explain the coupling strength variation, revealing the intertwining of excitons and photons beyond the dipole approximation.

Two-Photon Rabi Splitting in a Coupled System of a Nanocavity and Exciton Complexes.

Two-photon Rabi splitting in a cavity-dot system provides a basis for multiqubit coherent control in a quantum photonic network. Here we report on two-photon Rabi splitting in a strongly coupled cavity-dot system. The quantum dot was grown intentionally large in size for a large oscillation strength and small biexciton binding energy. Both exciton and biexciton transitions couple to a high-quality-factor photonic crystal cavity with large coupling strengths over 130 µeV. Furthermore, the small binding energy enables the cavity to simultaneously couple with two exciton states. Thereby, two-photon Rabi splitting between the biexciton and cavity is achieved, which can be well reproduced by theoretical calculations with quantum master equations.

Design and Characterisation of Titanium Nitride Subarrays of Kinetic Inductance Detectors for Passive Terahertz Imaging.

We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature T c , sheet resistance R s and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEP opt ≈ 2.3 × 10 - 15 W / Hz , which is promising for passive terahertz imaging applications.

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2.

Formation of a contaminant free, flat, electrically passive interface to a gate oxide such as a-Al(2)O(3) is the critical step in fabricating III-V metal oxide semiconductor field effect transistors; while the bulk oxide is amorphous, the interface may need to be ordered to prevent electrical defect formation. A two temperature in situ cleaning process is shown to produce a clean, flat group III or group V rich InGaAs surface. The dependence of initial surface reconstruction and dosing temperature of the seeding of aluminum with trimethylaluminum dosing is observed to produce an ordered unpinned passivation layer on InGaAs(001)-(4 × 2) surface at sample temperatures below 190 °C. Conversely, the InGaAs(001)-(2 × 4) surface is shown to generate an unpinned passivation layer with a seeding temperature up to 280 °C. For both reconstructions, the chemical drive force is consistent with formation of As-Al-As bonds. The optimal seed layer protects the surface from background contamination.