ABSTRACT
We report the temperature dependent performance of an O-band bismuth (Bi)-doped fiber amplifier (BDFA) in the temperature range from -60 to +80°C. At room temperature, maximum gains of 27 and 40 dB with noise figures (NFs) of 4.3 and 4.8 dB are measured for -23 dBm signal power in the single and double pass BDFA, respectively. An increment in gain and reduction in NF is observed as the ambient temperature of the BDFA is reduced. In the double pass BDFA, the temperature dependent gain coefficient from -60 to +80°C is found to be around -0.02 and -0.03 dB/°C across the wavelength band of 1300-1360 nm for -10 and -23 dBm signal powers, respectively. We also study the gain and NF characteristics with pump power and signal power at different temperatures, and a maximum gain of 45 dB is obtained at -60°C for -30 dBm signal power.
ABSTRACT
In this Letter, we investigate and compare the gain and noise figure characteristics of bismuth (Bi)-doped fiber amplifiers configured in both single and double signal pass implementations. A maximum gain of 25 dB and a noise figure of 4 dB is measured at 1360 nm in the single pass configuration for -23 dBm input signal power, whereas in the double pass configuration the gain of the amplifier is improved significantly by 14 dB allowing us to achieve a gain of 39 dB with a noise figure of 5 dB. To the best of our knowledge, this is the highest gain reported to date using Bi-doped fiber as a gain medium. Furthermore, we also study the gain and noise figure dependency on pump power, signal power, and pump wavelength for the double pass amplifier configuration. We observed similar gain and noise figure performance in the double pass configuration to that of the single pass configuration but with the benefit of less pump power and a shorter length of the Bi-doped fiber.
ABSTRACT
We demonstrate a 1340 nm mode-locked Bismuth (Bi)-doped fiber laser without any saturable absorber. The effect of pump power on pulse width is studied, and a variation from 1.5 to 3 ns is reported. The output of the mode-locked Bi-doped fiber laser is further amplified using a master oscillator power amplifier configuration, and a peak power of 1.15 W is achieved. Soliton bunching is observed, and a true pulse width of 1.2 ps is reported from the measured autocorrelation trace. Stable operation of the mode-locked laser is verified from the radio-frequency spectrum with a fundamental repetition rate of 6.3 MHz, and SNR of 65 dB.
ABSTRACT
Bismuth (Bi)-doped phosphosilicate fibers have been fabricated by the modified chemical vapor deposition (MCVD)-solution doping technique under different process conditions. The influence of fabrication conditions on unsaturable loss in fibers has been investigated. Pump wavelength dependent Bi gain has been studied to obtain a flat gain over a wide bandwidth. A diode pumped all-fiber Bi-doped amplifier with a flat gain of 25±1 dB from 1320-1360 nm (40 nm) has been demonstrated for -10 dBm of input signal power with a noise figure (NF) ranging from 4-6 dB. Moreover, a small signal gain of 29 dB and a NF of 4.5 dB at 1340 nm has been achieved for an input signal power of -30 dBm.
ABSTRACT
Bismuth-doped aluminosilicate fiber has been fabricated by the MCVD-solution doping method and characterized for its unsaturable loss and gain. The amplifier performance has been compared for a novel pumping wavelength of 1120 nm with the conventional pumping wavelength region of 1047 nm. Unsaturable loss was 65% and 35% at 1047 and 1120 nm, pump wavelengths, respectively. A maximum gain of about 8 dB at 1180 nm for a fiber length of 100 m was observed with 1120 nm pumping. Gain enhancement of 70% was achieved with the 1120 nm pump as compared to the 1047 nm pump. A further 3.5 dB gain was obtained on simultaneous pumping at 1047 and 1120 nm.
