Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN.

The rough morphology at the growth surface results in the non-uniform distribution of indium composition, intentionally or unintentionally doped impurity, and thus impacts the performance of GaN-based optoelectronic and vertical power electronic devices. We observed the morphologies of unintentionally doped GaN homo-epitaxially grown via MOCVD and identified the relations between rough surfaces and the miscut angle and direction of the substrate. The growth kinetics under the effect of the Ehrlich-Schwoebel barrier were studied, and it was found that asymmetric step motions in samples with a large miscut angle or those grown at high temperature were the causes of step-bunching. Meandering steps were believed to be caused by surface free energy minimization for steps with wide terraces or deviating from the [11¯00] m-direction.

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.

Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm-2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.

Nitrogen vacancies in GaN templates and their critical role on the luminescence efficiency of blue quantum wells.

In InGaN-based LEDs, an InGaN layer underlying active region has been widely used to improve the luminescence efficiency of the quantum wells (QWs). It has been reported recently that the role of InGaN underlayer (UL) is to block the diffusion of point defects or surface defects in n-GaN into QWs. The type and the source of the point defects need further investigations. In this paper, using temperature-dependent photoluminescence (PL) measurements, we observe emission peak related to nitrogen vacancies (VN) in n-GaN. In combination with secondary ion mass spectroscopy (SIMS) measurement and theoretical calculation, it is found that VN concentration in n-GaN is as high as about 3 × 1018 cm-3 in n-GaN grown with low growth V/III ratio and can be suppressed to about 1.5 × 1016 cm-3 by increasing growth V/III ratio. Luminescence efficiency of QWs grown on n-GaN under high V/III ratio is greatly improved. These results indicate high density of nitrogen vacancies are formed in n-GaN layer grown under low V/III ratio and diffuse into quantum wells during epitaxial growth and reduce the luminescence efficiency of the QWs.

The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film.

Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic duty cycling on the morphology, crystalline quality, Mg doping concentration, and electrical properties of GaN:Mg films grown by MME. When the metal shutter duty cycling is 20 s open/10 s close, the sample has smooth surface with clear steps even with Mg doping concentration higher than 1 × 1020 cm-3. The RMS roughness is about 0.5 nm. The FWHM of (002) XRD rocking curve is 230 arcsec and the FWHM of (102) XRD rocking curve is 260 arcsec. As result, a hole concentration of 5 × 1018 cm-3 and a resistivity of 1.5 Ω·cm have been obtained. The hole concentration increases due to the incorporation of surface accumulated Mg dopants into suitable Ga substitutional sites with minimal formation of compensatory defects.

Dual-wavelength switching in InGaN quantum dot micro-cavity light-emitting diodes.

Dual-wavelength switchable emission has been demonstrated in InGaN quantum dot (QD) micro-cavity light-emitting diodes (MCLEDs). By simply modulating the injected current levels, the output of the device can be dynamically tuned between the two distinct cavity modes at 498.5 and 541.7 nm, exhibiting deterministic mode switching in the green spectral range. Owing to the microcavity effect, high spectral purity with a narrow linewidth of 0.21 nm was obtained. According to the experimental and theoretical results, it can be concluded that the dual-wavelength switching for the investigated MCLEDs is ascribed to the broad and tunable gain of a thin InGaN QD active region, together with the mode selection and enhancement effect of the cavity. To provide additional guidelines for controllable dual-wavelength switchable operation in nitride-based light-emitting devices, detailed design and fabrication strategies are discussed. This work presents an effective method to achieve mode switching for practical applications such as multi-wavelength optical recording, frequency mixing, flip-flop and optical switches.

Tests and Numerical Study of Single-Lap Thermoplastic Composite Joints Bolted by Countersunk.

Tensile tests were carried out to investigate the effect of stacking sequences on the bearing strength of single-lap thermoplastic composite countersunk bolted joints. A 3D elastoplastic model was built based on a plastic theory for numerical analysis. The damage initiation was judged based on LaRC05 criteria, and the damage propagation was described by using a nonlinear, gradual unloading method based on crack band theory. The accuracy of the present model was validated by comparing the numerical results to those from the tests. The test results showed that the effects of stacking sequences on the ultimate bearing strength and the 2% offset bearing strength are limited. Moreover, the numerical results depicted that the ultimate bearing strength and the 2% offset bearing strength reduce when the bolt-tightening torque or the bolt-hole clearance is increased.

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.

Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate.

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells.

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

High Precision Detection Method for Delamination Defects in Carbon Fiber Composite Laminates Based on Ultrasonic Technique and Signal Correlation Algorithm.

This paper presents a method based on signal correlation to detect delamination defects of widely used carbon fiber reinforced plastic with high precision and a convenient process. The objective of it consists in distinguishing defect and non-defect signals and presenting the depth and size of defects by image. A necessary reference signal is generated from the non-defect area by using autocorrelation theory firstly. Through the correlation calculation results, the defect signal and non-defect signal are distinguished by using Euclidean distance. In order to get more accurate time-of-flight, cubic spline interpolation is introduced. In practical automatic ultrasonic A-scan signal processing, signal correlation provide a new way to avoid problems such as signal peak tracking and complex gate setting. Finally, the detection results of a carbon fiber laminate with artificial delamination through ultrasonic phased array C-scan acquired from Olympus OmniScan MX2 and this proposed algorithm are compared, which showing that this proposed algorithm performs well in defect shape presentation and location calculation. The experiment shows that the defect size error is less than 4%, the depth error less than 3%. Compared with ultrasonic C-scan method, this proposed method needs less inspector's prior-knowledge, which can lead to advantages in automatic ultrasonic testing.

Experimental Investigation of Impactor Diameter Effect on Low-Velocity Impact Response of CFRP Laminates in a Drop-Weight Impact Event.

The present study delved into the effect of impactor diameter on low velocity impact response and damage characteristics of CFRP. Moreover, the phased array ultrasonic technique (PAUT) was adopted to identify the impact damages based on double-sided scanning. Low-velocity impact tests were carried out using three hemispherical impactors with different diameters. The relationship of impact response and impactor diameters was analyzed by ultrasonic C-scans and S-scans, combined with impact response parameters. Subsequently, the damage characteristics were assessed in terms of dent depth, delamination area and extension shape via the thickness, and the relationships between absorbed energy, impactor displacement, dent depth and delamination area were elucidated. As revealed from experiment results, double-sided PAUT is capable of representing the internal damage characteristics more accurately. Moreover, the impactor diameter slightly affects the impact response under small impact energy, whereas it significantly affects the impact response under large impact energy.

Suppression of substrate mode in GaN-based green laser diodes.

Parasitic substrate mode readily appears in GaN-based laser diodes (LDs) because of insufficient optical confinement, especially for green LDs. Substrate modes affect the behavior of a LD severely, including the laser beam quality, the optical output power, the longitudinal mode stability, and the maximum modulation speed. In this article, systematic studies on the n-cladding layer (CL) design to suppress the substrate mode of GaN-based green LDs were carried out. We established a contour map to describe the relationship between the optical confinement (determined by the thickness and the refractive index) of n-CL and the substrate mode intensity by simulating the near-field pattern and the far-field pattern. We found that it was difficult to obtain the Gaussian-shape far-field pattern using AlGaN as a cladding layer due to the appearance of cracks induced by tensile strain. However, this can be realized by introducing quaternary AlInGaN as a cladding layer since refractive index and strain can be tuned separately for quaternary alloy.

Damage Localization of Composites Based on Difference Signal and Lamb Wave Tomography.

In order to deal with the problem of composite damage location, an imaging technique based on differential signal and Lamb wave tomography was proposed. Firstly, the feasibility of the technique put forward was verified by simulation. In this process, the composite model was regularly set down by the circular sensor array, with each sensor acting as an actuator in sequence to generate Lamb waves. Apart from that, other sensors were used to collect response signals. With regard to the damage factor, it was mainly determined by the difference between the damage signal and the non-damage signal. The probabilistic imaging algorithm was employed to carry out damage location imaging. Then, experiments were carried out so as to study the selected composite plate. Finally, the tentative outcomes have illustrated that the maximum error of damage imaging position was 7.07 mm. The relative error was 1.6%. In addition, the method has the characteristics of simple calculation and high imaging efficiency. Therefore, it has large technical potential and wide applications in the damage location and damage recognition for composite material.

Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region.

By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm-2. The output power of the green LD is 58 mW at a current density of 6 kA cm-2 under continuous-wave operation at room temperature.

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.