ABSTRACT
Ultrafast VECSELs are compact pulsed laser sources with more flexibility in the emission wavelength compared to diode-pumped solid-state lasers. Typically, the reduction of the pulse repetition rate is a straightforward method to increase both pulse energy and peak power. However, the relatively short carrier lifetime of semiconductor gain materials of a few nanoseconds sets a lower limit to the repetition rate of passively modelocked VECSELs. This fast gain recovery combined with low pulse repetition rates leads to the buildup of multiple pulses in the cavity. Therefore, we applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses.
Subject(s)
Lasers , Optics and Photonics/methods , Semiconductors , Equipment Design , Lasers, Semiconductor , Lasers, Solid-StateABSTRACT
Linear and nonlinear gain characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) is presented with spectrally resolved measurements of the gain and with gain saturation measurements of two EP-VECSEL samples with different field enhancement in the quantum-well gain layers. The spectral bandwidth, small-signal gain and saturation fluence of the devices are compared. Using the sample with the larger bandwidth, we have demonstrated the shortest pulses generated from a passively modelocked EP-VECSEL to date. With a low-saturation-fluence SESAM for passive modelocking we have achieved 9.5-ps pulses with 7.6 mW average output power at a repetition rate of 1.4 GHz. With a higher output coupler transmission the pulse duration was increased to 31 ps with an average output power of 13.6 mW. The pulses were chirped mainly due to the group delay dispersion (GDD) introduced by the intermediate DBR, which compensates the optical loss in the structure.