Microwave sintering process model.

In order to simulate and optimize the microwave sintering of a silicon nitride and tungsten carbide/cobalt toolbits process, a microwave sintering process model has been built. A cylindrical sintering furnace was used containing a heat insulating layer, a susceptor layer, and an alumina tube containing the green toolbit parts between parallel, electrically conductive, graphite plates. Dielectric and absorption properties of the silicon nitride green parts, the tungsten carbide/cobalt green parts, and an oxidizable susceptor material were measured using perturbation and waveguide transmission methods. Microwave absorption data were measured over a temperature range from 20 degrees C to 800 degrees C. These data were then used in the microwave process model which assumed plane wave propagation along the radial direction and included the microwave reflection at each interface between the materials and the microwave absorption in the bulk materials. Heat transfer between the components inside the cylindrical sintering furnace was also included in the model. The simulated heating process data for both silicon nitride and tungsten carbide/cobalt samples closely follow the experimental data. By varying the physical parameters of the sintering furnace model, such as the thickness of the susceptor layer, the thickness of the allumina tube wall, the sample load volume and the graphite plate mass, the model data predicts their effects which are helpful in optimizing those parameters in the industrial sintering process.

A system for controlled microwave heating of small samples.

A system for the controlled thawing and heating of small samples in a waveguide is described. A means of maintaining constant absorbed power within the sample over a wide range of sample parameters is a major feature of the system. Provision for sensing the melting point of immersed samples is include. Samples are continuously rotated to improve heating uniformity.