Tailoring Ultrafast Near-Band Gap Photoconductive Response in GeS by Zero-Valent Cu Intercalation.

Zero-valent intercalation of atomic metals into the van der Waals gap of layered materials can be used to tune their electronic, optical, thermal, and mechanical properties. Here, we report the impact of intercalating ∼3 atm percent of zero-valent copper into germanium sulfide (GeS). Advanced many-body calculations predict that copper introduces quasi-localized intermediate band states, and time-resolved THz spectroscopy studies demonstrate that those states have prominent effects on the photoconductivity of GeS. Cu-intercalated GeS exhibits a faster rise of transient photoconductivity and a shorter lifetime of optically injected carriers following near-gap excitation with 800 nm pulses. At the same time, Cu intercalation improves free carrier mobility from 1100 to 1300 cm2 V-1 s-1, which we attribute to the damping of acoustic phonons observed in Brillouin scattering and consequent reduction of phonon scattering.

Ultrafast Spectroscopy of Plasmons and Free Carriers in 2D MXenes.

2D MXenes have diverse and chemically tunable optical properties that arise from an interplay between free carriers, interband transitions, and plasmon resonances. The nature of photoexcitations and their dynamics in three different members of the MXene family, Ti3 C2 , Mo2 Ti2 C3 , and Nb2 C, are investigated using two complementary pump-probe techniques, transient optical absorption, and time-resolved terahertz (THz) spectroscopy. Measurements reveal pronounced plasmonic effects in the visible and near-IR in all three. Optical excitation, with either 400 or 800 nm pulses, results in a rapid increase in lattice temperature, evidenced by a pronounced broadening of the plasmon mode that presents as a plasmon bleach in transient absorption measurements. Observed kinetics of plasmon bleach recovery provide a means to monitor lattice cooling. Remarkably slow cooling, proceeding over hundreds of picoseconds to nanoseconds time scales, implies MXenes have low thermal conductivities. The slowest recovery kinetics are observed in the MXene with the highest free carrier density, viz. Ti3 C2 , that supports phonon scattering by free carriers as a possible mechanism limiting thermal conductivity. These new insights into photoexcitation dynamics can facilitate their applications in photothermal solar energy conversion, plasmonic devices, and even photothermal therapy and drug delivery.

Effects of polyethylene oxide particles on the photo-physical properties and stability of FA-rich perovskite solar cells.

In this paper, we use Polyethylene Oxide (PEO) particles to control the morphology of Formamidinium (FA)-rich perovskite films and achieve large grains with improved optoelectronic properties. Consequently, a planar perovskite solar cell (PSC) is fabricated with additions of 5 wt% of PEO, and the highest PCE of 18.03% was obtained. This solar cell is also shown to retain up to 80% of its initial PCE after about 140 h of storage under the ambient conditions (average relative humidity of 62.5 ± 3.25%) in an unencapsulated state. Furthermore, the steady-state PCE of the PEO-modified PSC device remained stable for long (over 2500 s) under continuous illumination. This addition of PEO particles is shown to enable the tuning of the optoelectronic properties of perovskite films, improvements in the overall photophysical properties of PSCs, and an increase in resistance to the degradation of PSCs.

Dynamical Control over Terahertz Electromagnetic Interference Shielding with 2D Ti3C2Ty MXene by Ultrafast Optical Pulses.

High electrical conductivity and strong absorption of electromagnetic radiation in the terahertz (THz) frequency range by metallic 2D MXene Ti3C2Ty make it a promising material for electromagnetic interference shielding, THz detectors, and transparent conducting electrodes. Here, we demonstrate that ultrafast optical pulses with wavelengths straddling the visible range (400 and 800 nm) induce transient broad-band THz transparency in the MXene that persists for nanoseconds. We demonstrate that optically induced transient THz transparency is independent of temperature from 95 to 290 K. This discovery opens new possibilities for development of switchable electromagnetic interference shielding materials and devices that can be rendered partially transparent on demand for transmitting THz signals, or for designing new THz devices such as sensitive optically gated detectors.

Ultrafast Zero-Bias Surface Photocurrent in Germanium Selenide: Promise for Terahertz Devices and Photovoltaics.

Theory predicts that a large spontaneous electric polarization and concomitant inversion symmetry breaking in GeSe monolayers result in a strong shift current in response to their excitation in the visible range. Shift current is a coherent displacement of electron density on the order of a lattice constant upon above-bandgap photoexcitation. A second-order nonlinear effect, it is forbidden by the inversion symmetry in the bulk GeSe crystals. Here, we use terahertz (THz) emission spectroscopy to demonstrate that ultrafast photoexcitation with wavelengths straddling both edges of the visible spectrum, 400 and 800 nm, launches a shift current in the surface layer of a bulk GeSe crystal, where the inversion symmetry is broken. The direction of the surface shift current determined from the observed polarity of the emitted THz pulses depends only on the orientation of the sample and not on the linear polarization direction of the excitation. Strong absorption by the low-frequency infrared-active phonons in the bulk of GeSe limits the bandwidth and the amplitude of the emitted THz pulses. We predict that reducing GeSe thickness to a monolayer or a few layers will result in a highly efficient broadband THz emission. Experimental demonstration of THz emission by the surface shift current in bulk GeSe crystals puts this 2D material forward as a candidate for next-generation shift current photovoltaics, nonlinear photonic devices, and THz sources.

High Light Absorption and Charge Separation Efficiency at Low Applied Voltage from Sb-Doped SnO2/BiVO4 Core/Shell Nanorod-Array Photoanodes.

BiVO4 has become the top-performing semiconductor among photoanodes for photoelectrochemical water oxidation. However, BiVO4 photoanodes are still limited to a fraction of the theoretically possible photocurrent at low applied voltages because of modest charge transport properties and a trade-off between light absorption and charge separation efficiencies. Here, we investigate photoanodes composed of thin layers of BiVO4 coated onto Sb-doped SnO2 (Sb:SnO2) nanorod-arrays (Sb:SnO2/BiVO4 NRAs) and demonstrate a high value for the product of light absorption and charge separation efficiencies (ηabs × Î·sep) of ∼51% at an applied voltage of 0.6 V versus the reversible hydrogen electrode, as determined by integration of the quantum efficiency over the standard AM 1.5G spectrum. To the best of our knowledge, this is one of the highest ηabs × Î·sep efficiencies achieved to date at this voltage for nanowire-core/BiVO4-shell photoanodes. Moreover, although WO3 has recently been extensively studied as a core nanowire material for core/shell BiVO4 photoanodes, the Sb:SnO2/BiVO4 NRAs generate larger photocurrents, especially at low applied voltages. In addition, we present control experiments on planar Sb:SnO2/BiVO4 and WO3/BiVO4 heterojunctions, which indicate that Sb:SnO2 is more favorable as a core material. These results indicate that integration of Sb:SnO2 nanorod cores with other successful strategies such as doping and coating with oxygen evolution catalysts can move the performance of BiVO4 and related semiconductors closer to their theoretical potential.

Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals.

We explore the dynamics of blue emission from dodecylamine and ammonia functionalized silicon nanocrystals (Si NCs) with average diameters of ∼3 and ∼6 nm using time-resolved photoluminescence (TRPL) spectroscopy. The Si NCs exhibit nanosecond PL decay dynamics that is independent of NC size and uniform across the emission spectrum. The TRPL measurements reveal complete quenching of core state emission by a charge transfer state that is responsible for the blue PL with a radiative recombination rate of ∼5 × 10(7) s(-1). A detailed picture of the charge transfer state emission dynamics in these functionalized Si NCs is proposed.

Generation of terahertz radiation by optical excitation of aligned carbon nanotubes.

We have generated coherent pulses of terahertz radiation from macroscopic arrays of aligned single-wall carbon nanotubes (SWCNTs) excited by femtosecond optical pulses without externally applied bias. The generated terahertz radiation is polarized along the SWCNT alignment direction. We propose that top-bottom asymmetry in the SWCNT arrays produces a built-in electric field in semiconducting SWCNTs, which enables generation of polarized terahertz radiation by a transient photocurrent surge directed along the nanotube axis.

Size vs surface: tuning the photoluminescence of freestanding silicon nanocrystals across the visible spectrum via surface groups.

The syntheses of colloidal silicon nanocrystals (Si-NCs) with dimensions in the 3-4 nm size regime as well as effective methodologies for their functionalization with alkyl, amine, phosphine, and acetal functional groups are reported. Through rational variation in the surface moieties we demonstrate that the photoluminescence of Si-NCs can be effectively tuned across the entire visible spectral region without changing particle size. The surface-state dependent emission exhibited short-lived excited-states and higher relative photoluminescence quantum yields compared to Si-NCs of equivalent size exhibiting emission originating from the band gap transition. The Si-NCs were exhaustively characterized using transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Fourier transformed infrared spectroscopy (FTIR), and their optical properties were thoroughly investigated using fluorescence spectroscopy, excited-state lifetime measurements, photobleaching experiments, and solvatochromism studies.

Intense THz pulses down-regulate genes associated with skin cancer and psoriasis: a new therapeutic avenue?

Terahertz (THz) radiation lies between the infrared and microwave regions of the electromagnetic spectrum and is non-ionizing. We show that exposure of artificial human skin tissue to intense, picosecond-duration THz pulses affects expression levels of numerous genes associated with non-melanoma skin cancers, psoriasis and atopic dermatitis. Genes affected by intense THz pulses include nearly half of the epidermal differentiation complex (EDC) members. EDC genes, which are mapped to the chromosomal human region 1q21, encode for proteins that partake in epidermal differentiation and are often overexpressed in conditions such as psoriasis and skin cancer. In nearly all the genes differentially expressed by exposure to intense THz pulses, the induced changes in transcription levels are opposite to disease-related changes. The ability of intense THz pulses to cause concerted favorable changes in the expression of multiple genes implicated in inflammatory skin diseases and skin cancers suggests potential therapeutic applications of intense THz pulses.

Intense THz pulses cause H2AX phosphorylation and activate DNA damage response in human skin tissue.

Recent emergence and growing use of terahertz (THz) radiation for medical imaging and public security screening raise questions on reasonable levels of exposure and health consequences of this form of electromagnetic radiation. In particular, picosecond-duration THz pulses have shown promise for novel diagnostic imaging techniques. However, the effects of THz pulses on human cells and tissues thus far remain largely unknown. We report on the investigation of the biological effects of pulsed THz radiation on artificial human skin tissues. We observe that exposure to intense THz pulses for ten minutes leads to a significant induction of H2AX phosphorylation, indicating that THz pulse irradiation may cause DNA damage in exposed skin tissue. At the same time, we find a THz-pulse-induced increase in the levels of several proteins responsible for cell-cycle regulation and tumor suppression, suggesting that DNA damage repair mechanisms are quickly activated. Furthermore, we find that the cellular response to pulsed THz radiation is significantly different from that induced by exposure to UVA (400 nm).

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.

Nonequilibrium spin distributions in single GaAs/AlGaAs core-shell nanowires are excited using resonant polarized excitation at 10 K. At all excitation energies, we observe strong photoluminescence polarization due to suppressed radiative recombination of excitons with dipoles aligned perpendicular to the nanowire. Excitation resonances are observed at 1- or 2-LO phonon energies above the exciton ground states. Using rate equation modeling, we show that, at the lowest energies, strongly nonequilibrium spin distributions are present and we estimate their spin relaxation rate.