ABSTRACT
For many opto-electronic applications, F:SnO2 materials must benefit from high transparency, high conductivity, and high mechanical strength even after quenching. The purpose of this study was to investigate the influence of quenching on the opto-electronic properties of the F:SnO2 layers synthesized at high temperature on Si x C y O-coated soda-lime glass by atmospheric chemical vapor deposition. The morphology, structure, and composition of the layers were studied before and after quenching in air- and oxygen-rich atmospheres at 670 °C. The free carrier concentration was reduced by oxygen vacancy (VO) passivation, as well as by F and Na diffusion, with all effects scaling up with quenching time in air. The transmittance also decreased with quenching time as Na impurities acted as absorption and electron recombination centers. In an oxygen-rich atmosphere, the VO passivation was even more emphasized, with however a moderate contribution to conductivity loss. The F:SnO2 layer microstructure and composition were rather fringed through high-temperature deposition. The almost invariable free carrier concentration and transmittance of the F:SnO2 samples quenched in O2 versus air were related to a moderation in Na diffusion. For long quenching times (>20 min) in air, Na and F diffusion prevailed explaining the conductivity drop.
ABSTRACT
The NaF-AlF(3) system with additions of CaF(2) and MgF(2) has been studied with Raman and vapor pressure measurements for 3 >/= CR (NaF/AlF(3) molar ratio) >/= 1 and up to 50 mol % additive. The results show that the binary melt can be described using the two equilibria AlF(6)(3)(-) = AlF(6)(2)(-) + F(-) and AlF(5)(2)(-) = AlF(4)(-) + F(-) with equilibrium constants 0.25 and 0.05, respectively, at 1293 K. Both reactions have positive reaction enthalpies. The first equilibrium is strongly shifted to the right resulting in a melt mixture with very low AlF(6)(3)(-) concentrations even at the Na(3)AlF(6) composition. Evidence for nonideal mixing of anions was found. For the ternaries, models based on Raman data are presented and compared with vapor pressure measurements. Good agreement is observed when association between the additives, CaF(2) or MgF(2), with the AlF(5)(2)(-) ions in the melt was considered. This association could be experimentally observed through a band broadening and a slight shift in the AlF(5)(2)(-) band frequency. Our vapor pressures and Raman data both indicate that MgF(2) clearly acts as an acid when added to NaF-AlF(3) melts of any composition. When CaF(2) is added, a slight decrease of vapor pressure occurs. Raman data indicate a decrease of AlF(4)(-) concentration, corresponding to a dissociation of CaF(2) with liberation of F(-) ions. All these results are, however, very much dependent on the initial melt composition. These data are explained in terms of acid-base, dilution, and association reactions of the solute with the solvent.
