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1.
J Electron Microsc (Tokyo) ; 53(1): 1-9, 2004.
Article in English | MEDLINE | ID: mdl-15077893

ABSTRACT

Long-period superstructures formed in off-stoichiometric L 1(0)-TiAl alloys were investigated by high-resolution transmission electron microscopy (HRTEM). The HRTEM analysis combined with multislice simulation and image processing was carried out to clarify atomistic microstructures of Al5Ti3 and h-Al2Ti ordered states and a short-range ordered (SRO) state in Ti-62.5 at.% Al alloys. Aluminium atoms in the (002) Ti layers form square-, lean rhombus- and fat rhombus-type ordered clusters in the SRO state. The ordered clusters are in contact with each other and form microdomains of various long-period superstructures. The ordered clusters are tiled periodically in a long range to form Al5Ti3 or h-Al2Ti domains and characteristic antiphase boundary structures.


Subject(s)
Alloys/chemistry , Aluminum/chemistry , Microscopy, Electron , Titanium/chemistry , Image Processing, Computer-Assisted , Molecular Structure
2.
Micron ; 34(3-5): 173-83, 2003.
Article in English | MEDLINE | ID: mdl-12895488

ABSTRACT

The analytical sensitivity in terms of the signal-to-noise ratio (SNR) was investigated for elemental mapping by a transmission electron microscope equipped with an energy filter (EF-TEM) and a scanning transmission electron microscope with an X-ray energy dispersive spectrometer (STEM-XEDS). To compare the detectability limits of the elemental maps by the two techniques, homogeneous Cu-0.98+/-0.34 wt% Mn and Cu-4.93+/-0.49 wt% Mn thin specimens were used. Elemental maps can be considered as either an image or a spectrum. Therefore, the detectability limits of the elemental maps were characterized by the spectral SNR. To evaluate the detectability limits of the elemental maps with statistical confidence limits such as 1 sigma, 2 sigma and 3 sigma, the SNR values were reviewed from the statistical point of view. In STEM-XEDS mapping, the spectral SNR values improve as the specimen thickness increases since the signal intensity increases. Conversely, the spectral SNR in EF-TEM mapping is maximized at a certain thickness and then reduces as the thickness increases. To compare the two mapping techniques with regard to the analytical sensitivity, a method to estimate the minimum mass fraction (MMF) from measured signal and background intensities was developed. In this experimental approach, the MMF value can be evaluated by selecting the appropriate SNR value corresponding to the statistical confidence limits. In comparing the estimated MMF values from the two mapping approaches, EF-TEM mapping can be more sensitive than STEM-XEDS mapping up to specimen thicknesses <20-30 nm in the 1 sigma confidence limit and < approximately 50 nm in the 3 sigma limits. However, as the specimen thickness increases, the XEDS maps provide better detectability limits in the Cu-Mn dilute alloy specimens.

3.
Microsc Microanal ; 8(1): 11-5, 2002 Feb.
Article in English | MEDLINE | ID: mdl-12533199

ABSTRACT

Lattice strains around a platelet oxygen precipitate in Si wafer is studied by energy filtering convergent-beam electron diffraction (CBED) and calculations based on the finite element method (FEM). Local lattice strains are measured from CBD patterns obtained with a probe size less than 2 nm in a specimen thicker than 450 nm. Strains measured are compressive along a direction normal to a plate of the precipitation and tensile along a direction parallel to the plate. Two-dimensional stress fields near the precipitate are obtained with FEM computer analyses by fitting the measured strains. It appears that shear stresses are concentrated at the end of the precipitate edge and the maximum shear stress at an interface between the precipitate and the Si-matrix is 1.9 GPa. It is demonstrated that a combination of the energy filtering CBED and FEM is very useful for the study of local strains near interfaces in semiconductor devices, in particular for the study of stress fields that are too steep for application of the conventional CBED technique.


Subject(s)
Crystallography/methods , Microscopy, Electron/methods , Silicon/analysis , Scattering, Radiation , Semiconductors
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