ABSTRACT
L10-ordered ferromagnetic nanowires with large coercivity are essential for realizing next-generation spintronic devices. Ferromagnetic nanowires have been commonly fabricated by first L10-ordering of initially disordered ferromagnetic films by annealing and then etching them into nanowire structures using lithography. If the L10-ordered nanowires can be fabricated using only lithography and subsequent annealing, the etching process can be omitted, which leads to an improvement in the fabrication process for spintronic devices. However, when nanowires are subjected to annealing, they easily transform into droplets, which is well-known as Plateau-Rayleigh instability. Here, we propose a concept of "nanostructure-induced L10-ordering" of twinned single-crystals in CoPt ferromagnetic nanowires with a 30 nm scale ultrafine linewidth on Si/SiO2 substrates. The driving forces for nanostructure-induced L10-ordering during annealing are atomic surface diffusion and extremely large internal stress at ultrasmall 10 nm scale curvature radii of the nanowires. (Co/Pt)6 multilayer nanowires are fabricated by a lift-off process combining electron-beam lithography and electron-beam evaporation, followed by annealing. Cross-sectional scanning transmission electron microscope images and nano-beam electron diffraction patterns clearly indicate nanostructure-induced L10-ordering of twinned single-crystals in the CoPt ferromagnetic nanowires, which exhibit a large coercivity of 10 kOe for perpendicular, longitudinal, and transversal directions of the nanowires. Two-dimensional grazing incidence X-ray diffraction shows superlattice peaks with Debye-Scherrer ring shapes, which also supports the nanostructure-induced L10-ordering. The fabrication method for nanostructure-induced L10-ordered CoPt ferromagnetic nanowires with twinned single-crystals on Si/SiO2 substrates would be significant for future silicon-technology-compatible spintronic applications.
ABSTRACT
Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasma-synthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.
ABSTRACT
We demonstrate an all-fiber Q-switched laser operation in the 2 µm region on the basis of a dynamic periodic microbend and pulsed-pump configuration. A single-mode thulium-doped silica fiber is pumped by 1.6 µm-band laser diodes, and the dynamic loss is introduced in the fiber ring resonator by the periodic microbend that is electrically controlled with a piezoelectric actuator. When the voltage-off period of the piezoelectric actuator is set at 20 µs for the pump power of 120 mW, the output pulse power is measured by 420 mW with a pulse width of 1.3 µs.