Combining grating-coupled illumination and image recognition for stable and localized optical scanning tunneling microscopy.

Combining scanning tunneling microscopy (STM) and optical excitation has been a major objective in STM for the last 30 years to study light-matter interactions on the atomic scale. The combination with modern pulsed laser systems even made it possible to achieve a temporal resolution down to the femtosecond regime. A promising approach toward a truly localized optical excitation is featured by nanofocusing via an optical antenna spatially separated from the tunnel junction. Until now, these experiments have been limited by thermal instabilities introduced by the laser. This paper presents a versatile solution to this problem by actively coupling the laser and STM, bypassing the vibration-isolation without compromising it. We utilize optical image recognition to monitor the position of the tunneling junction and compensate for any movement of the microscope relative to the laser setup with up to 10 Hz by adjusting the beamline. Our setup stabilizes the focus position with high precision (<1 µm) on long timescales (>1 h) and allows for high resolution STM under intense optical excitation with femtosecond pulses.

Substrate induced nanoscale resistance variation in epitaxial graphene.

Graphene, the first true two-dimensional material, still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances is still an open issue. Here, we quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry. These samples exhibit a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H silicon carbide substrate and with the distance between the graphene and the substrate. Our results experimentally quantify the impact of the graphene-substrate interaction on the local transport properties of graphene.