ABSTRACT
Creating a well-defined nanostructure through de-oxyribo nucleic acid (DNA)-nanotechnology, and specifically the development of metal/inorganic semiconductor junctions on DNA-assembled nanostructures, is an emerging research area. Herein, we investigate the electrical properties of biomolecule DNA-template based one-dimensional nanowires (NWs)-CdS/Au and without-template based nanoparticles (NPs)-CdS/Au devices grown on the Indium Tin Oxide (ITO) glass substrates. More importantly, the NWs-CdS/Au device displays a dramatic augmentation of current flow and also a striking change in threshold voltage (~55 mV) in comparison to NPs (~190 mV) and reported bulk-CdS/Au (~680 mV) devices. Albeit the manifestation of non-linear/asymmetric current-voltage (I-V) characteristic establishes the CdS/Au junction as Schottky device, but captivatingly, the large ideality factor of about 24 found in NWs-CdS/Au device could be due to the DNA-assembled based organic process CdS-semiconductor. Capacitance-voltage (C-V) measurements of the NWs-CdS/Au divulge a remarkable hump-like feature at lower frequency owing to the frequency dispersion effect. In contrast, the effect appears to be enfeebled with increasing frequency. We conjecture that the density of surface/interface traps materialises at the interface of nanostructures-CdS/metal-Au results in the changes in underlying electrical properties. The observation of significant differences in the electrical properties of DNA-assembled NWs-based Schottky junctions could possibly be helpful for the fabrication of more sophisticated and higher multispecificity biosensors for medical applications.