Combined Focused Electron Beam-Induced Deposition and Etching for the Patterning of Dense Lines without Interconnecting Material.

High resolution dense lines patterned by focused electron beam-induced deposition (FEBID) have been demonstrated to be promising for lithography. One of the challenges is the presence of interconnecting material, which is often carbonaceous, between the lines as a result of the Gaussian line profile. We demonstrate the use of focused electron beam-induced etching (FEBIE) as a scanning electron microscope (SEM)-based direct-write technique for the removal of this interconnecting material, which can be implemented without removing the sample from the SEM for post processing. Secondary electron (SE) imaging has been used to monitor the FEBIE process, and atomic force microscopy (AFM) measurements confirm the fabrication of well separated FEBID lines. We further demonstrate the application of this technique for removing interconnecting material in high resolution dense lines using backscattered electron (BSE) imaging to monitor the process.

Comparison of Pd electron beam induced deposition using two precursors and an oxygen purification strategy.

Focused electron beam induced deposition (FEBID) allows the creation of nanoscale structures through dissociation of an organo-metallic precursor by electrons at the beam impact point. The deposition of Pd can be interesting for its catalytic behavior and ability to contact carbon based materials. Two precursors were investigated-Pd(hfac)2 and (Cp)Pd(allyl)-and two deposition methods: with and without an in situ oxygen purification process. The deposition parameters can be tuned for the Pd(hfac)2 precursor to provide a deposition with 23 ± 2 at.% of Pd and a main component of C at 51 ± 3 at.% and minor components of O and F. An in situ purification process using O2 was much faster than expected and improved the Pd content to up to >65 at.% while reducing the C to ∼20 at.%, and avoiding the oxidation of Pd. The resistivity was ∼100 µOhm · cm and compares favorably with a bulk value of 10 µOhm · cm. The (Cp)Pd(allyl) precursor is interesting because it does not release fluorine during the deposition and hence it does not etch a possible substrate. Its FEBID deposition had a composition of 26 ± 5 at.% of Pd with 74 ± 5 at.% of C. The O2 purification process can improve the Pd content up to ∼60 at.% while reducing C to <20 at.%, but also increasing the O content to 18 at%, which was released afterwards. The best resistivity was measured at ∼1000 µOhm · cm, although better values can be anticipated for longer post treatment times.

Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature.

Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, 'in situ' purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for 'in situ' Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied.

Functional nickel-based deposits synthesized by focused beam induced processing.

Functional nanostructures fabricated by focused electron/ion beam induced processing (FEBIP/FIBIP) open a promising route for applications in nanoelectronics. Such developments rely on the exploration of new advanced materials. We report here the successful fabrication of nickel-based deposits by FEBIP/FIBIP using bis(methyl cyclopentadienyl)nickel as a precursor. In particular, binary compounds such as nickel oxide (NiO) are synthesized by using an in situ two-step process at room temperature. By this method, as-grown Ni deposits transform into homogeneous NiO deposits using focused electron beam irradiation under O2 flux. This procedure is effective in producing highly pure NiO deposits with resistivity of 2000 Ωcm and a polycrystalline structure with face-centred cubic lattice and grains of 5 nm. We demonstrate that systems based on NiO deposits displaying resistance switching and an exchange-bias effect could be grown by FEBIP using optimized parameters. Our results provide a breakthrough towards using these techniques for the fabrication of functional nanodevices.

Embedded purification for electron beam induced Pt deposition using MeCpPtMe3.

Two different room-temperature processes for the electron beam induced deposition of high purity platinum (Pt), using the standard MeCpPtMe3 precursor and oxygen for purification, have been investigated. The first process is a sequential method, which uses two independent gas injector systems (GIS) in order to perform a standard Pt deposition, followed by an e-beam post-irradiation under oxygen flux. The second process is a parallel, single-step process that includes a simultaneous flow of both precursor and oxygen, using an add-on device that can be mounted on the standard GIS needle. Both processes are effective in producing high purity Pt depositions close to 100 at%. The first method requires a high current and irradiation dose in the clean-up phase, and provides Pt structures with small voids, a maximum thickness of around 100 nm and resistivity of 88 ± 10 µΩ cm. The second method requires a high oxygen/precursor flux ratio and produces void-free structures with resistivity of 60 ± 5 µΩ cm, only six times the bulk value for Pt. The second method is easier to use and produces a void-free deposition of high purity Pt.

A new sequential EBID process for the creation of pure Pt structures from MeCpPtMe3.

Electron beam induced deposition (EBID) is a process used for the fabrication of three-dimensional nanostructures of a variety of materials, but direct deposition of pure metallic structures has rarely been achieved. Typically, MeCpPtMe3 as a precursor for Pt leads to a carbon rich deposit with ~15 at.% Pt, which negatively affects its application as an electrical contact. We report a new process for Pt purification: in situ annealing with electron beam post-irradiation under oxygen flux, which can completely purify a thin (<100 nm) Pt EBID structure at substrate temperatures as low as 120 °C. We have developed a sequential method in which a thin Pt EBID structure is deposited on a previously purified structure and subsequently purified. The resistivity of the contact grown by this sequential procedure is observed to be ~70 ± 8 µΩ cm-only six times higher than that of pure bulk Pt. Thus, sequential deposition and purification proves to be an effective method for fabricating pure Pt structures of desired dimensions.