Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface.

The application of two-dimensional (2D) materials has alleviated a number of challenges of traditional epitaxy and pushed forward the integration of dissimilar materials. Besides acting as a seed layer for van der Waals epitaxy, the 2D materials─being atom(s) thick─have also enabled wetting transparency in which the potential field of the substrate, although partially screened, is still capable of imposing epitaxial overgrowth. One of the crucial steps in this technology is the preservation of the quality of 2D materials during and after their transfer to a substrate of interest. In the present study, we show that by honing the achievements of traditional epitaxy and wet chemistry a hybrid approach can be devised that offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudo-substrate suitable for further overgrowth of functional oxides, such as PbZr1-xTixO3 (PZT). Given that the quality of the films grown on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this approach may provide new routes for direct and "remote" epitaxy or layer-transfer techniques of dissimilar material systems.

Comparison of Metal-Based PZT and PMN-PT Energy Harvesters Fabricated by Aerosol Deposition Method.

In this study, polycrystalline lead magnesium niobate-lead titanate (PMN-PT) was explored as an alternative piezoelectric material, with a higher power density for energy harvesting (EH), and comprehensively compared to the widely used polycrystalline lead zirconate titanate (PZT). First, the size distribution and piezoelectric properties of PZT and PMN-PT raw powders and ceramics were compared. Thereafter, both materials were deposited on stainless-steel substrates as 10 µm thick films using the aerosol deposition method. The films were processed as {3-1}-mode cantilever-type EH devices using microelectromechanical systems. The films with different annealing temperatures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and dielectric behavior measurements. Furthermore, the mechanical and electrical properties of PMN-PT- and PZT-based devices were measured and compared. The PMN-PT-based devices showed a higher Young's modulus and lower damping ratio. Owing to their higher figure of merit and lower piezoelectric voltage constant, they showed a higher power and lower voltage than the PZT-based devices. Finally, when poly-PMN-PT material was the active layer, the output power was enhanced by 26% at the 0.5 g acceleration level. Thus, these devices exhibited promising properties, meeting the high current and low voltage requirements in integrated circuit designs.