Note: Photoluminescence excitation measurements in the 1.1-1.6 µm spectral range.

Pressure-tuned laser diodes are used for photoluminescence excitation in quantum-well samples grown on InP. With two bent-waveguide, external cavity lasers, the spectral range from 1.1 to 1.6 µm can be covered. This range is important for telecommunication devices, for quantum-dot emitters etc. while it is inaccessible to solid-state tunable lasers or dye lasers.

Photoluminescence excitation measurements using pressure-tuned laser diodes.

Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

Pressure tuning of laser diodes in the near-infrared up to 1850 nm: operational characteristics and reliability studies.

Wavelength tuning of infrared laser diodes in the high-hydrostatic pressure setup is demonstrated and its reliability is discussed in detail. Major reliability issues concern the photochemical reactions on the laser facet and the presence of strong absorption bands above 1650 nm in typical pressure liquids that do not undergo phase transitions up to 20 kbar. Despite these difficulties spectrally wide-range pressure tuning can be achieved with sufficient reliability for spectroscopic applications.