Erbium-doped hybrid waveguide amplifiers with net optical gain on a fully industrial 300 mm silicon nitride photonic platform.

Recently, erbium-doped integrated waveguide devices have been extensively studied as a CMOS-compatible and stable solution for optical amplification and lasing on the silicon photonic platform. However, erbium-doped waveguide technology still remains relatively immature when it comes to the production of competitive building blocks for the silicon photonics industry. Therefore, further progress is critical in this field to answer the industry's demand for infrared active materials that are not only CMOS-compatible and efficient, but also inexpensive and scalable in terms of large volume production. In this work, we present a novel and simple fabrication method to form cost-effective erbium-doped waveguide amplifiers on silicon. With a single and straightforward active layer deposition, we convert passive silicon nitride strip waveguide channels on a fully industrial 300 mm photonic platform into active waveguide amplifiers. We show net optical gain over sub-cm long waveguide channels that also include grating couplers and mode transition tapers, ultimately demonstrating tremendous progress in developing cost-effective active building blocks on the silicon photonic platform.

Potential for sub-mm long erbium-doped composite silicon waveguide DFB lasers.

Compact silicon integrated lasers are of significant interest for various applications. We present a detailed investigation for realizing sub-mm long on-chip laser structures operating at λ = 1.533 µm on the silicon-on-insulator photonic platform by combining a multi-segment silicon waveguide structure and a recently demonstrated erbium-doped thin film deposition technology. Quarter-wave shifted distributed feedback structures (QWS-DFB) are designed and a detailed calculation of the lasing threshold conditions is quantitatively estimated and discussed. The results indicate that the requirements for efficient lasing can be obtained in various combinations of the designed waveguide DFB structures. Overall, the study proposes a path to the realization of compact (< 500 µm) on-chip lasers operating in the C-band through the hybrid integration of erbium-doped aluminum oxide processed by atomic layer deposition in the silicon photonic platform and operating under optical pumping powers of few mW at 1,470 nm.

High-sensitivity complex refractive index sensing based on Fano resonance in the subwavelength grating waveguide micro-ring resonator.

High-sensitivity complex refractive index sensing is proposed and experimentally demonstrated, favoring with sharp Fano resonance at 1550 nm wavelength based on subwavelength grating waveguide (SWG) micro-ring resonator. The micro-ring is composed by trapezoidal silicon pillars with subwavelength period to enhance the light-analyte overlap and get high quality factor as well. One straight SWG waveguide is side coupled with the micro-ring, which is specially designed to produce partial Fabry-Perot (FP) effect. Due to the interaction of resonant state of micro-ring and partial FP effect in straight waveguide, a sharp asymmetrical Fano resonance is formed at 1550 nm wavelength. Benefit from the large light-analyte overlap of the SWG waveguide structure and the sharp asymmetrical Fano resonance in spectrum, high theoretical sensitivities of 366 nm/RIU and 9700/RIU can be realized for the real part (n) and the imaginary part (κ) of refractive index respectively. We also experimentally demonstrate the sensing for glucose solution concentrations, and high experimental sensitivity of 363nm/RIU is obtained for n, and for κ the experimental results are also in well agreement with the simulation results.