Electronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach.

We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum ring coupled structure, inspired by the recent experimental report by Elborg and collaborators (2017). The finite element method constitutes the numerical technique used to solve the three-dimensional effective mass equation within the parabolic band approximation, including the effects of externally applied electric and magnetic fields. Initially, the features of conduction electron states in the proposed system appear discussed in detail, under different geometrical configurations and values of the intensity of the aforementioned electromagnetic probes. In the second part, the properties of an electron-hole pair confined within the very kind of structure reported in the reference above are investigated via a model that tries to reproduce as close as possible the developed profile. In accordance, we report on the energies of confined electron and hole, affected by the influence of an external electric field, revealing the possibility of field-induced separate spatial localization, which may result in an indirect exciton configuration. In relation with this fact, we present a preliminary analysis of such phenomenon via the calculation of the Coulomb integral.

Electronic states in GaAs-(Al,Ga)As eccentric quantum rings under nonresonant intense laser and magnetic fields.

The features of the electron energy spectrum in eccentric two-dimensional GaAs-AlGaAs quantum rings of circular shape are theoretically investigated taking into account the effect of externally applied magnetic and intense laser fields. Analytical expressions for the laser-dressed confining potential in this kind of quantum ring geometry are reported for the first time. Finite element method is used to solve the resulting single-particle effective mass two-dimensional partial differential equation. It is shown that the allowed level spectrum is greatly influence by the external probe as well as by the breaking of geometric symmetry related to the changes in eccentricity. In presence of an intense laser field, the conduction band confining profile suffers strong modifications along the structure, with an additional contribution to symmetry breaking. These modifications of electronic quantum states reflect in the intraband optical absorption. Accordingly, the features of the intraband transitions are discussed in detail, revealing the significant influence of the magnetic field strength and laser field intensity and polarization, together with eccentricity, in the allowing of ground-to-excited states transitions and their corresponding intensities.