ABSTRACT
Skyrmion-based devices have been proposed as a promising solution for low-energy data storage. These devices include racetrack or logic structures and require skyrmions to be confined in regions with dimensions comparable to the size of a single skyrmion. Here we examine skyrmions in FeGe device shapes using Lorentz transmission electron microscopy to reveal the consequences of skyrmion confinement in a device-like structure. Dumbbell-shaped elements were created by focused ion beam milling to provide regions where single skyrmions are confined adjacent to areas containing a skyrmion lattice. Simple block shapes of equivalent dimensions were also prepared to allow a direct comparison with skyrmion formation in a less complex, yet still confined, device geometry. The impact of applying a magnetic field and varying the temperature on the formation of skyrmions within the shapes was examined. This revealed that it is not just confinement within a small device structure that controls the position and number of skyrmions but that a complex device geometry changes the skyrmion behavior, including allowing skyrmions to form at lower applied magnetic fields than in simple shapes. The impact of edges in complex shapes is observed to be significant in changing the behavior of the magnetic textures formed. This could allow methods to be developed to control both the position and number of skyrmions within device structures.
ABSTRACT
The intense research effort investigating magnetic skyrmions and their applications for spintronics has yielded reports of more exotic objects including the biskyrmion, which consists of a bound pair of counter-rotating vortices of magnetization. Biskyrmions have been identified only from transmission electron microscopy images and have not been observed by other techniques, nor seen in simulations carried out under realistic conditions. Here, quantitative Lorentz transmission electron microscopy, X-ray holography, and micromagnetic simulations are combined to search for biskyrmions in MnNiGa, a material in which they have been reported. Only type-I and type-II magnetic bubbles are found and images purported to show biskyrmions can be explained as type-II bubbles viewed at an angle to their axes. It is not the magnetization but the magnetic flux density resulting from this object that forms the counter-rotating vortices.
ABSTRACT
Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p-n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic potential simulations highlights several remaining challenges to quantitative analysis. Our results illustrate how the determination of reliable potential distributions from phase images of electrically biased devices requires electrostatic fringing fields, surface charges, specimen preparation damage and the effects of limited spatial resolution to be taken into account.
ABSTRACT
Electron tomography and electron holography experiments have been combined to investigate the 3D electrostatic potential distribution in semiconductor devices. The experimental procedure for the acquisition and data reconstruction of holographic tilt series of silicon p-n junction specimens is described. A quantitative analysis of the experimental results from specimens of two different thicknesses is presented, revealing the 3D electrostatic potential variations arising from the presence of surfaces and damage generated by focused ion beam (FIB) sample preparation. Close to bulk-like properties are measured in the centre of the tomographic reconstruction of the specimen, revealing higher electrically active dopant concentrations compared to the measurements obtained at the specimen surfaces. A comparison of the experimental results from the different thickness specimens has revealed a 'critical' thickness for this specimen preparation method of 350nm that is required for this device structure to retain 'bulk'-like properties in the centre of the membrane.
ABSTRACT
The need to determine the electrical properties of semiconductor junctions with high spatial resolution is as pressing now as ever. One technique that offers the possibility of quantitative high-resolution mapping of two- and three-dimensional electrostatic potential distributions is off-axis electron holography. In this study, we review some of the issues associated with interpreting phase shifts measured using off-axis electron holography, and we describe how a quantitative determination of the dopant-related electrostatic potential can be achieved for device structures. Issues that include the presence of surface "dead" layers, external electrostatic fringing fields, variations in specimen thickness and dynamical diffraction are discussed, and their impact on the quantification of results obtained using off-axis electron holography is examined.
