Contact metalens for high-resolution optical microscope in semiconductor failure analysis.

The continuous downscaling of electronic devices requires higher-resolution optical microscopic images for semiconductor failure analysis (FA). However, a part of the diffracted light from the measuring pattern in the silicon (Si) substrate cannot be collected due to the total internal reflection (TIR) at the interface between the Si substrate and air. We propose a metalens suitable for FA that improves resolution of optical microscopic images by collecting beyond the critical angle of TIR at the interface. For the proof of concept, we integrated the fabricated metalens into the optical setup of FA and acquired optical microscopic images of FA that clearly show improved resolution.

Removal of surface-normal spot beam from on-chip 2D beam pattern projecting lasers.

Static arbitrary two-dimensional beam patterns have been demonstrated using on-chip size "integrable spatial-phase-modulating surface-emitting lasers," which use the band edge mode of a two-dimensional photonic crystal as an in-plane resonator, while the spatial phase of the lightwaves of the band edge mode are simultaneously modulated in a holographic manner by a local positional shift of holes from their lattice points. Meanwhile, the beam patterns include a spot beam in the surface-normal direction (0th-order beam), which corresponds to components of vertical diffraction of the band edge modes without spatial phase modulation. A promising method, used to remove the 0th-order beam, uses a structure that prohibits the vertical diffraction of band edge modes. For this purpose, we set the period of the virtual photonic crystal structure from the conventional Γ2 band edge to the Μ1 band edge, where vertical diffraction is prohibited. Moreover, the additional spatial phase modulation that cancels the in-plane component of the wavevectors of the lightwaves of the band edge modes at the Μ1 band edge are also imposed to output the beam patterns vertically. As a result, we successfully demonstrated two-dimensional beam patterns without a spot beam in the surface-normal direction.

Principle of beam generation in on-chip 2D beam pattern projecting lasers.

Integrable spatial-phase-modulating surface-emitting lasers, which utilize the band edge mode of two-dimensional photonic-crystals as resonators, project static arbitrary two-dimensional beam patterns from on-chip size. In this device, holes shifting from the lattice point of a two-dimensional photonic crystal provide spatial phase modulation to light waves, which form standing waves in the resonator. Thus far, the origin of the beam patterns has not been studied, especially the formation of subsidiary beam patterns against the designed beam pattern. In this work, we clarify the origin of beam patterns in two types of spatial phase modulating method, which impose in-plane shifting of holes according to circular and linear shift methods. Based on a theoretical study of spatial phase modulation, we reveal that the circular shift method provides a symmetric beam pattern, while the linear shift method causes an asymmetric beam pattern. Consequently, we demonstrated the asymmetric two-dimensional beam pattern by the linear shift method for the first time.