Photoluminescence from Two-Phase Nanocomposites Embedded in Polymers.

A set of polymer-embedded, two-colored nanocomposites were prepared where the co-existing emission peaks (~578 nm and ~650 nm) had different ratios at their emission thresholds. The nanocomposite samples were simultaneously excited by a 405 nm laser, and the growth of photoluminescence intensities was studied as a function of excitation intensity. The two peaks showed different growth evolution mechanisms. The factors impacting this difference could be (1) energy transfer between the two sized nanoparticles; (2) relaxation mechanism of smaller nanoparticles; and (3) material properties of the polymer.

Substrate and Excitation Intensity Dependence of Saturable Absorption in Perovskite Quantum Dot Films.

Saturable absorption in perovskite quantum dot (PQD) films, leading to saturation in photoluminescence (PL), is reported. PL of drop-casting films was used to probe how excitation intensity and host-substrate influence the growth of PL intensity. The PQD films were deposited on single-crystal GaAs, InP, Si wafers and glass. Saturable absorption was confirmed through PL saturation in all films, with different excitation intensity thresholds, suggesting strong substrate-dependent optical properties, resulting from absorption nonlinearities in the system. The observations extend our former studies (Appl. Phys. Lett., 2021, 119, 19, 192103), wherein we pointed out that the PL saturation in QDs can be used to create all-optical switches in combination with a bulk semiconductor host.

Microscopic description and uncertainty of the Stokes shift in semiconductors.

Using GaAs as a test material, we investigated the redshift between emission and the optical bandgap. The knowledge of the energy difference, referred to as the Stokes shift, is of considerable importance for solid-state light sources because its magnitude defines the centered monochromaticity of the emission. Employing Fan's theory, we reveal the basic parameters, which determine the Stokes shift, and provide an uncertainty analysis, considering both uncorrelated and correlated variables. We disclose that the considerable scatter of the dielectric constants in the literature causes uncertainties comparable to or even exceeding the mean. The work stresses that the high-frequency and static dielectric constants might be closer than the currently promoted numbers.

Optical Bandgap Definition via a Modified Form of Urbach's Rule.

We are reporting an esoteric method to determine the optical bandgap of direct gap materials by employing Urbach's rule. The latter, which describes the slope of the band tail absorption in semiconductors, in its original version, cannot be employed to pinpoint the optical bandgap. Herein, however, we show that a modified form of Urbach's rule defines the optical bandgap, and therefore, enables the accurate determination of the optical bandgap energy, which turns out to be identical with the threshold energy for the band tail absorption. The model further produces an explicit expression for the absorption coefficient at the optical bandgap energy.

Revelation of the Technological Versatility of the Eu(TTA)3Phen Complex by Demonstrating Energy Harvesting, Ultraviolet Light Detection, Temperature Sensing, and Laser Applications.

We synthesized the Eu(TTA)3Phen complex and present herein a detailed study of its photophysics. The investigations encompass samples dispersed in poly(vinyl alcohol) and in ethanol in order to explore the versatile applicability of these lanthanide-based materials. Details upon the interaction between Eu, TTA, and the Phen ligands are revealed by Fourier transform infrared and UV-visible absorption, complemented by steady state and temporally resolved emission studies, which provide evidence of an efficient energy transfer from the organic ligands to the central Eu(3+) ion. The material produces efficient emission even under sunlight exposure, a feature pointing toward suitability for luminescent solar concentrators and UV light sensing, which is demonstrated for intensities as low as 200 nW/cm(2). The paper further promotes the complex's capability to be used as luminescence-based temperature sensor demonstrated by the considerable emission intensity changes of ∼4.0% per K in the temperature range of 50-305 K and ∼7% per K in the temeperature range 305-340 K. Finally, increasing the optical excitation causes both spontaneous emission amplification and emission peak narrowing in the Eu(TTA)3Phen complex dispersed in poly(vinyl alcohol) - features indicative of stimulated emission. These findings in conjunction with the fairly large stimulated emission cross-section of 4.29 × 10(-20) cm(2) demonstrate that the Eu(TTA)3Phen complex dispersed in poly(vinyl alcohol) could be a very promising material choice for lanthanide-polymer based laser architectures.

Inherent photoluminescence Stokes shift in GaAs.

The intrinsic photoluminescence Stokes shift, i.e., the energy difference between optical band gap and emission peak, of 350 µm thick semi-insulating GaAs wafers is found to be 4 meV at room temperature. The result is based on the determination of the optical bulk band gap from the transmission trend via modified Urbach rule whose result is confirmed with the transmission derivative method. The findings reveal the detailed balance of the optically evoked transitions and disclose the intrinsic link between Stokes shift and the Urbach tail slope parameter.

Photocurrent limit in nanowires.

Square root photocurrent dependences of nanowires on light intensity were reported in the literature without clarification of the limiting effect. In this Letter, we derived a relation excellently fitting the observed nonlinearities and, intensifying the significance of the result, we demonstrated that the fit parameters involved can be employed to determine the impurity concentration and electronic response time of nano-sized semiconductors.

Photocurrent theory based on coordinate dependent lifetime.

Recent work by Pejova [Mater. Res. Bull. 43, 2887 (2008)] showed that the widely cited classical photocurrent theory of DeVore [Phys. Rev. 102, 86 (1956)] does not necessarily apply for photocurrent experiments carried out on thin-film semiconductors. In this Letter, we theoretically and experimentally justify the successful use of the photocurrent model published by Bouchenaki et al. [J. Opt. Soc. Am. B 8, 691 (1991)].