ABSTRACT
For the energy region from tens to hundreds of electron volts, the multilayered mirror (MLM) monochromator has never been realized due to the difficulty of reducing the background noise of the total reflection component, in spite of its usefulness in synchrotron radiation experiments. In this work, a double-crystal-type MLM monochromator equipped with a thin-film filter has been designed on the basis of trial fabrication of the mirror-driving system and of Mo/Si and Mo/C MLMs; its performance has been evaluated by calculating its output photon flux. It is shown that by using the MLMs at low incident angles, combined with an appropriate thin-film filter, it is possible to make a practical monochromator with high output photon flux and low background noise.
ABSTRACT
An ultrahigh-vacuum reaction apparatus to study synchrotron-radiation-stimulated processes has been constructed and placed on beamline 4B of the synchrotron radiation storage ring (UVSOR) at the Institute for Molecular Science. The apparatus is designed so that multiple synchrotron radiation processes such as etching and chemical vapour deposition can be carried out successively without breaking the high vacuum. It is equipped with IR reflection absorption spectroscopy (IRRAS) apparatus and reflective high-energy electron diffraction (RHEED) apparatus for in situ observations. The basic parameters of the apparatus including etching and deposition rates have been measured. IRRAS using buried metal layer substrates has been confirmed to be a very useful method of analyzing the reaction mechanisms of the synchrotron-radiation-stimulated processes.
ABSTRACT
The sensitivity and linearity of infrared reflection absorption spectroscopy (IRAS) has been significantly improved by using a buried-metal-layer (BML) substrate having an SiO(2)(15 nm)/Al(200 nm)/Si(100) structure, instead of a plain Si(100) substrate. By applying this BML-IRAS technique to the in situ observation of synchrotron-radiation-induced chemical vapor deposition of amorphous Si (a-Si) on an SiO(2) surface using Si(2)H(6) gas, the vibrational spectra of surface SiH(n) species in this reaction system have been observed for the first time with sufficient sensitivity for submonolayer coverage. The main silicon hydride species after deposition at 423 K are surface SiH(2) and SiH. Surface SiH(3) and SiH(2) are observed to be easily decomposed by synchrotron radiation irradiation. The decomposition rate of SiH by synchrotron radiation irradiation is much slower than those of SiH(2) and SiH(3).
ABSTRACT
Multilayer structures of tungsten and beryllium were synthesized onto flat silicon single-crystal substrates by the neutral atom beam sputtering technique. Structures of constituent tungsten and beryllium thin films were evaluated. The standard deviation of the interface roughness of the multilayer was estimated to be ~2.5 A. Reflectivities of multilayer mirrors were measured at a grazing incidence of 5.0 degrees . The observed reflectivity of 30% at 1055 eV was in good agreement with the calculated value considering the interface roughness and oxygen contamination for a tungsten-beryllium structure having a period of 77.0 A.
ABSTRACT
Bias dependences for reflectivity curves were measured in the total reflection range for several liquid crystals, and orientation near the boundary was investigated. Incident angle dependences of the transient response for total reflection ON and OFF switching were measured. Fluorescent dye addition effects for total reflection switching were investigated. Using a mixture of the fluorescent dye (coumarin 6) and MBBA + BBCA, a novel display device for a wide viewing angle has been successfully demonstrated.
ABSTRACT
Laser dye molecules (coumarin 6) were dissolved in a nematic liquid crystal MBBA + BBCA. Great changes in polarization and fluorescence vs applied voltage were found as well as a change in dielectric constant. Molecular orientation of the liquid crystal under the electric field and association of the dye molecules are identified as having the greatest effect on the fluorescence intensity.
