Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law.

HgCdTe is promising as a material to solve a problem of the development of semiconductor sources with an operational frequency range of 6-10 THz due to the small optical phonon energies and electron effective mass. In this study, we calculate the dependence of the metal-metal waveguide characteristics on the number of cascades for the 3-well design HgCdTe-based quantum cascade laser at 8.3 THz. It is shown that four cascades are sufficient for lasing at a lattice temperature of 80 K due to the large gain in the active medium. The results of this study provide a way to simplify the fabrication of thin active region HgCdTe-based quantum cascade lasers for operation in the range of the GaAs phonon Reststrahlen band inaccessible to existing quantum cascade lasers.