ABSTRACT
Scar wave functions in a fully chaotic cavity are obtained numerically by an extended Fox-Li method. Lasing on the scar modes are observed in a semiconductor microcavity with a selective excitation of different scars controlled by corresponding shape of electrodes for current injection.
ABSTRACT
We have observed lasing in a complicated eigenmode of a quasi-stadium laser diode with an unstable resonator consisting of two curved end mirrors obeying an unstable resonator condition and two straight sidewall mirrors. The laser was fabricated by application of a reactive-ion-etching technique to a molecular beam epitaxy-grown graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs structure. The far-field pattern shows that the lasing mode corresponds to the complicated lowest-loss mode obtained numerically by an extended Fox-Li method.
ABSTRACT
We fabricated quasi-stadium laser diodes whose resonators consist of two concentric curved end mirrors and two straight sidewall mirrors. We observed two lasing modes that correspond to different beam propagations along the cavity axis and along a ring trajectory, and different far-field patterns with wide angular separation. The modes can be selected by control of an electrode pattern. We also show that the far-field patterns numerically obtained by the extended Fox-Li mode calculation method are in good agreement with the experimental results.