ABSTRACT
Tunnel field-effect transistors were fabricated from axially doped silicon nanowire p-n junctions grown via the vapor-liquid-solid method. Following dry thermal oxidation to form a gate dielectric shell, the nanowires have a p-n-n(+) doping profile with an abrupt n-n(+) junction, which was revealed by scanning capacitance microscopy. The lightly doped n-segment can be inverted to p(+) by modulating the top gate bias, thus forming an abrupt gated p(+)-n(+) junction. A band-to-band tunneling current flows through the electrostatically doped p(+)-n(+) junction when it is reverse biased. Current-voltage measurements performed from 375 down to 4.2 K show two different regimes of tunneling current at high and low temperatures, indicating that there are both direct band-to-band and trap-assisted tunneling paths.
ABSTRACT
Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10(4) SiNWs, the conductance was found to increase with frequency as f(s), with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.