ABSTRACT
An integrated tunable CMOS laser for silicon photonics, operating at the C-band, and fabricated in a commercial CMOS foundry is presented. The III-V gain medium section is embedded in the silicon chip, and is hermetically sealed. The gain section is metal bonded to the silicon substrate creating low thermal resistance into the substrate and avoiding lattice mismatch problems. Optical characterization shows high performance in terms of side mode suppression ratio, relative intensity noise, and linewidth that is narrow enough for coherent communications.
ABSTRACT
We experimentally demonstrate use of plasmonic resonant phenomena combined with strong field localization to enhance efficiency of confining optical fields in a Si waveguide. Our approach utilizes a plasmonic resonant nano-focusing-antenna (RNFA), that simultaneously supports several focusing mechanisms in a single nanostructure, integrated with a lossless Si waveguide utilized with silicon-on-insulator (SOI) technology, to achieve a sub-diffraction limited focusing with a nanoscale (deeply subwavelength) spot size. The metallic RNFA effectively converts an incoming propagating waveguide mode to a localized resonant plasmon mode in an ultrasmall volume in all 3 dimensions. The near-field optical measurements of the fabricated RNFA using heterodyne near-field scanning optical microscope (H-NSOM) validate the theoretical predictions showing strong optical field localization.
