Molecular Autonomous Pathfinder Using Deep Reinforcement Learning.

Diffusion in solids is a slow process that dictates rate-limiting processes in key chemical reactions. Unlike crystalline solids that offer well-defined diffusion pathways, the lack of similar structural motifs in amorphous or glassy materials poses great challenges in bridging the slow diffusion process and material failures. To tackle this problem, we propose an AI-guided long-term atomistic simulation approach: molecular autonomous pathfinder (MAP) framework based on deep reinforcement learning (DRL), where the RL agent is trained to uncover energy efficient diffusion pathways. We employ a Deep Q-Network architecture with distributed prioritized replay buffer, enabling fully online agent training with accelerated experience sampling by an ensemble of asynchronous agents. After training, the agents provide atomistic configurations of diffusion pathways with their energy profile. We use a piecewise nudged elastic band to refine the energy profile of the obtained pathway and the corresponding diffusion time on the basis of transition-state theory. With the MAP framework, we demonstrate atomistic diffusion mechanisms in amorphous silica with time scales comparable to experiments.

Pendant Group Functionalization of Cyclic Olefin for High Temperature and High-Density Energy Storage.

High-temperature flexible polymer dielectrics are critical for high density energy storage and conversion. The need to simultaneously possess a high bandgap, dielectric constant and glass transition temperature forms a substantial design challenge for novel dielectric polymers. Here, by varying halogen substituents of an aromatic pendant hanging off a bicyclic mainchain polymer, a class of high-temperature olefins with adjustable thermal stability are obtained, all with uncompromised large bandgaps. Halogens substitution of the pendant groups at para or ortho position of polyoxanorborneneimides (PONB) imparts it with tunable high glass transition from 220 to 245 °C, while with high breakdown strength of 625-800 MV/m. A high energy density of 7.1 J/cc at 200 °C is achieved with p-POClNB, representing the highest energy density reported among homo-polymers. Molecular dynamic simulations and ultrafast infrared spectroscopy are used to probe the free volume element distribution and chain relaxations pertinent to dielectric thermal properties. An increase in free volume element is observed with the change in the pendant group from fluorine to bromine at the para position; however, smaller free volume element is observed for the same pendant when at the ortho position due to steric hindrance. With the dielectric constant and bandgap remaining stable, properly designing the pendant groups of PONB boosts its thermal stability for high density electrification.

Alkali hydroxide (LiOH, NaOH, KOH) in water: Structural and vibrational properties, including neutron scattering results.

Structural and vibrational properties of aqueous solutions of alkali hydroxides (LiOH, NaOH, and KOH) are computed using quantum molecular dynamics simulations for solute concentrations ranging between 1 and 10M. Element-resolved partial radial distribution functions, neutron and x-ray structure factors, and angular distribution functions are computed for the three hydroxide solutions as a function of concentration. The vibrational spectra and frequency-dependent conductivity are computed from the Fourier transforms of velocity autocorrelation and current autocorrelation functions. Our results for the structure are validated with the available neutron data for 17M concentration of NaOH in water [Semrouni et al., Phys. Chem. Chem. Phys. 21, 6828 (2019)]. We found that the larger ionic radius [rLi+

Surface Transfer Doping in MoO3-x/Hydrogenated Diamond Heterostructure.

Surface transfer doping is proposed to be a potential solution for doping diamond, which is hard to dope for applications in high-power electronics. While MoO3 is found to be an effective surface electron acceptor for hydrogen-terminated diamond with a negative electron affinity, the effects of commonly existing oxygen vacancies remain elusive. We have performed reactive molecular dynamics simulations to study the deposition of MoO3-x on a hydrogenated diamond (111) surface and used first-principles calculations based on density functional theory to investigate the electronic structures and charge transfer mechanisms. We find that MoO3-x is an effective surface electron acceptor and the spatial extent of doped holes in hydrogenated diamond is extended, promoting excellent transport properties. Charge transfer is found to monotonically decrease with the level of oxygen vacancy, providing guidance for engineering of the surface transfer doping process.

Inelastic Neutron Scattering Study of Phonon Density of States of Iodine Oxides and First-Principles Calculations.

Iodine oxides I2Oy (y = 4, 5, 6) crystallize into atypical structures that fall between molecular- and framework-base types and exhibit high reactivity in an ambient environment, a property highly desired in the so-called "agent defeat materials". Inelastic neutron scattering experiments were performed to determine the phonon density of states of the newly synthesized I2O5 and I2O6 samples. First-principles calculations were carried out for I2O4, I2O5, and I2O6 to predict their thermodynamic properties and phonon density of states. Comparison of the INS data with the Raman and infrared measurements as well as the first-principles calculations sheds light on their distinctive, anisotropic thermomechanical properties.

Induction and Ferroelectric Switching of Flux Closure Domains in Strained PbTiO3 with Neural Network Quantum Molecular Dynamics.

We have developed an extension of the Neural Network Quantum Molecular Dynamics (NNQMD) simulation method to incorporate electric-field dynamics based on Born effective charge (BEC), called NNQMD-BEC. We first validate NNQMD-BEC for the switching mechanisms of archetypal ferroelectric PbTiO3 bulk crystal and 180° domain walls (DWs). NNQMD-BEC simulations correctly describe the nucleation-and-growth mechanism during DW switching. In triaxially strained PbTiO3 with strain conditions commonly seen in many superlattice configurations, we find that flux-closure texture can be induced with application of an electric field perpendicular to the original polarization direction. Upon field reversal, the flux-closure texture switches via a pair of transient vortices as the intermediate state, indicating an energy-efficient switching pathway. Our NNQMD-BEC method provides a theoretical guidance to study electro-mechano effects with existing machine learning force fields using a simple BEC extension, which will be relevant for engineering applications such as field-controlled switching in mechanically strained ferroelectric devices.

Pressure-Controlled Layer-by-Layer to Continuous Oxidation of ZrS2(001) Surface.

Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenides (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transition from layer-by-layer oxidation to amorphous-oxide-mediated continuous oxidation as the oxidation progresses, where different pressures selectively expose different oxidation stages within a given time window. While the kinetics of the fast continuous oxidation stage is well described by the conventional Deal-Grove model, the layer-by-layer oxidation stage is dictated by reactive bond-switching mechanisms. This work provides atomistic details and a potential foundation for rational pressure-controlled oxidation of TMDC materials.

Wrinkles, Ridges, Miura-Ori, and Moiré Patterns in MoSe2 Using Neural Networks.

Effects of lateral compression on out-of-plane deformation of two-dimensional MoSe2 layers are investigated. A MoSe2 monolayer develops periodic wrinkles under uniaxial compression and Miura-Ori patterns under biaxial compression. When a flat MoSe2 monolayer is placed on top of a wrinkled MoSe2 layer, the van der Waals (vdW) interaction transforms wrinkles into ridges and generates mixed 2H and 1T phases and chain-like defects. Under a biaxial strain, the vdW interaction induces regions of Miura-Ori patterns in bilayers. Strained systems analyzed using a convolutional neural network show that the compressed system consists of semiconducting 2H and metallic 1T phases. The energetics, mechanical response, defect structure, and dynamics are analyzed as bilayers undergo wrinkle-ridge transformations under uniaxial compression and moiré transformations under biaxial compression. Our results indicate that in-plane compression can induce self-assembly of out-of-plane metasurfaces with controllable semiconducting and metallic phases and moiré patterns with unique optoelectronic properties.

Squishing Skyrmions: Symmetry-Guided Dynamic Transformation of Polar Topologies Under Compression.

Mechanical controllability of recently discovered topological defects (e.g., skyrmions) in ferroelectric materials is of interest for the development of ultralow-power mechano-electronics that are protected against thermal noise. However, fundamental understanding is hindered by the "multiscale quantum challenge" to describe topological switching encompassing large spatiotemporal scales with quantum mechanical accuracy. Here, we overcome this challenge by developing a machine-learning-based multiscale simulation framework─a hybrid neural network quantum molecular dynamics (NNQMD) and molecular mechanics (MM) method. For nanostructures composed of SrTiO3 and PbTiO3, we find how the symmetry of mechanical loading essentially controls polar topological switching. We find under symmetry-breaking uniaxial compression a squishing-to-annihilation pathway versus formation of a topological composite named skyrmionium under symmetry-preserving isotropic compression. The distinct pathways are explained in terms of the underlying materials' elasticity and symmetry, as well as the Landau-Lifshitz-Kittel scaling law. Such rational control of ferroelectric topologies will likely facilitate exploration of the rich ferroelectric "topotronics" design space.

Defect-free and crystallinity-preserving ductile deformation in semiconducting Ag2S.

Typical ductile materials are metals, which deform by the motion of defects like dislocations in association with non-directional metallic bonds. Unfortunately, this textbook mechanism does not operate in most inorganic semiconductors at ambient temperature, thus severely limiting the development of much-needed flexible electronic devices. We found a shear-deformation mechanism in a recently discovered ductile semiconductor, monoclinic-silver sulfide (Ag2S), which is defect-free, omni-directional, and preserving perfect crystallinity. Our first-principles molecular dynamics simulations elucidate the ductile deformation mechanism in monoclinic-Ag2S under six types of shear systems. Planer mass movement of sulfur atoms plays an important role for the remarkable structural recovery of sulfur-sublattice. This in turn arises from a distinctively high symmetry of the anion-sublattice in Ag2S, which is not seen in other brittle silver chalcogenides. Such mechanistic and lattice-symmetric understanding provides a guideline for designing even higher-performance ductile inorganic semiconductors.

Photoexcitation-Induced Nonthermal Ultrafast Loss of Long-Range Order in GeTe.

Nonadiabatic quantum molecular dynamics is used to investigate the evolution of GeTe photoexcited states. Results reveal a photoexcitation-induced picosecond nonthermal path for the loss of long-range order. A valence electron excitation threshold of 4% is found to trigger local disorder by switching Ge atoms from octahedral to tetrahedral sites and promoting Ge-Ge bonding. The resulting loss of long-range order for a higher valence electron excitation fraction is achieved without fulfilling the Lindemann criterion for melting, therefore utilizing a nonthermal path. The photoexcitation-induced structural disorder is accompanied by charge transfer from Te to Ge, Ge-Te bonding-to-antibonding, and Ge-Ge antibonding-to-bonding change, triggering Ge-Te bond breaking and promoting the formation of Ge-Ge wrong bonds. These results provide an electronic-structure basis to understand the photoexcitation-induced ultrafast changes in the structure and properties of GeTe and other phase-change materials.

Anisotropic atomistic shock response mechanisms of aramid crystals.

Aramid fibers composed of poly(p-phenylene terephthalamide) (PPTA) polymers are attractive materials due to their high strength, low weight, and high shock resilience. Even though they have widely been utilized as a basic ingredient in Kevlar, Twaron, and other fabrics and applications, their intrinsic behavior under intense shock loading is still to be understood. In this work, we characterize the anisotropic shock response of PPTA crystals by performing reactive molecular dynamics simulations. Results from shock loading along the two perpendicular directions to the polymer backbones, [100] and [010], indicate distinct shock release mechanisms that preserve and destroy the hydrogen bond network. Shocks along the [100] direction for particle velocity Up < 2.46 km/s indicate the formation of a plastic regime composed of shear bands, where the PPTA structure is planarized. Shocks along the [010] direction for particle velocity Up < 2.18 km/s indicate a complex response regime, where elastic compression shifts to amorphization as the shock is intensified. While hydrogen bonds are mostly preserved for shocks along the [100] direction, hydrogen bonds are continuously destroyed with the amorphization of the crystal for shocks along the [010] direction. Decomposition of the polymer chains by cross-linking is triggered at the threshold particle velocity Up = 2.18 km/s for the [010] direction and Up = 2.46 km/s for the [100] direction. These atomistic insights based on large-scale simulations highlight the intricate and anisotropic mechanisms underpinning the shock response of PPTA polymers and are expected to support the enhancement of their applications.

Piezoelectricity across 2D Phase Boundaries.

Piezoelectricity in low-dimensional materials and metal-semiconductor junctions has attracted recent attention. Herein, a 2D in-plane metal-semiconductor junction made of multilayer 2H and 1T' phases of molybdenum(IV) telluride (MoTe2 ) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H-1T' junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials.

Neural Network for Principle of Least Action.

The principle of least action is the cornerstone of classical mechanics, theory of relativity, quantum mechanics, and thermodynamics. Here, we describe how a neural network (NN) learns to find the trajectory for a Lennard-Jones (LJ) system that maintains balance in minimizing the Onsager-Machlup (OM) action and maintaining the energy conservation. The phase-space trajectory thus calculated is in excellent agreement with the corresponding results from the "ground-truth" molecular dynamics (MD) simulation. Furthermore, we show that the NN can easily find structural transformation pathways for LJ clusters, for example, the basin-hopping transformation of an LJ38 from an incomplete Mackay icosahedron to a truncated face-centered cubic octahedron. Unlike MD, the NN computes atomic trajectories over the entire temporal domain in one fell swoop, and the NN time step is a factor of 20 larger than the MD time step. The NN approach to OM action is quite general and can be adapted to model morphometrics in a variety of applications.

Hydrogen Bonding in Liquid Ammonia.

The nature of hydrogen bonding in condensed ammonia phases, liquid and crystalline ammonia has been a topic of much investigation. Here, we use quantum molecular dynamics simulations to investigate hydrogen bond structure and lifetimes in two ammonia phases: liquid ammonia and crystalline ammonia-I. Unlike liquid water, which has two covalently bonded hydrogen and two hydrogen bonds per oxygen atom, each nitrogen atom in liquid ammonia is found to have only one hydrogen bond at 2.24 Å. The computed lifetime of the hydrogen bond is t ≅ 0.1 ps. In contrast to crystalline water-ice, we find that hydrogen bonding is practically nonexistent in crystalline ammonia-I.

Exploring far-from-equilibrium ultrafast polarization control in ferroelectric oxides with excited-state neural network quantum molecular dynamics.

Ferroelectric materials exhibit a rich range of complex polar topologies, but their study under far-from-equilibrium optical excitation has been largely unexplored because of the difficulty in modeling the multiple spatiotemporal scales involved quantum-mechanically. To study optical excitation at spatiotemporal scales where these topologies emerge, we have performed multiscale excited-state neural network quantum molecular dynamics simulations that integrate quantum-mechanical description of electronic excitation and billion-atom machine learning molecular dynamics to describe ultrafast polarization control in an archetypal ferroelectric oxide, lead titanate. Far-from-equilibrium quantum simulations reveal a marked photo-induced change in the electronic energy landscape and resulting cross-over from ferroelectric to octahedral tilting topological dynamics within picoseconds. The coupling and frustration of these dynamics, in turn, create topological defects in the form of polar strings. The demonstrated nexus of multiscale quantum simulation and machine learning will boost not only the emerging field of ferroelectric topotronics but also broader optoelectronic applications.

Review of strategies toward the development of alloy two-dimensional (2D) transition metal dichalcogenides.

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted significant attention owing to their prosperity in material research. The inimitable features of TMDCs triggered the emerging applications in diverse areas. In this review, we focus on the tailored and engineering of the crystal lattice of TMDCs that finally enhance the efficiency of the material properties. We highlight several preparation techniques and recent advancements in compositional engineering of TMDCs structure. We summarize different approaches for TMDCs such as doping and alloying with different materials, alloying with other 2D metals, and scrutinize the technological potential of these methods. Beyond that, we also highlight the recent significant advancement in preparing 2D quasicrystals and alloying the 2D TMDCs with MAX phases. Finally, we highlight the future perspectives for crystal engineering in TMDC materials for structure stability, machine learning concept marge with materials, and their emerging applications.

Deep Well Trapping of Hot Carriers in a Hexagonal Boron Nitride Coating of Polymer Dielectrics.

Polymer dielectrics can be cost-effective alternatives to conventional inorganic dielectric materials, but their practical application is critically hindered by their breakdown under high electric fields driven by excited hot charge carriers. Using a joint experiment-simulation approach, we show that a 2D nanocoating of hexagonal boron nitride (hBN) mitigates the damage done by hot carriers, thereby increasing the breakdown strength. Surface potential decay and dielectric breakdown measurements of hBN-coated Kapton show the carrier-trapping effect in the hBN nanocoating, which leads to an increased breakdown strength. Nonadiabatic quantum molecular dynamics simulations demonstrate that hBN layers at the polymer-electrode interfaces can trap hot carriers, elucidating the observed increase in the breakdown field. The trapping of hot carriers is due to a deep potential well formed in the hBN layers at the polymer-electrode interface. Searching for materials with similar deep well potential profiles could lead to a computationally efficient way to design good polymer coatings that can mitigate breakdown.

Electric-field-induced crossover of polarization reversal mechanisms in Al1-xScxN ferroelectrics.

Scandium-doped aluminum nitride, Al1-xScxN, represents a new class of displacive ferroelectric materials with high polarization and sharp hysteresis along with high-temperature resilience, facile synthesizability and compatibility with standard CMOS fabrication techniques. The fundamental physics behind the transformation of unswitchable piezoelectric AlN into switchable Al-Sc-N ferroelectrics depends upon important atomic properties such as local structure, dopant distributions and the presence of competing mechanism of polarization switching in the presence of an applied electric-field that have not been understood. We computationally synthesize Al1-xScxN to quantify the inhomogeneity of Sc distribution and phase segregation, and characterize its crystal and electronic structure as a function of Sc-doping. Nudged elastic band calculations of the potential energy surface and quantum molecular dynamics simulations of direct electric-field-driven ferroelectric switching reveal a crossover between two polarization reversal mechanisms-inhomogeneous nucleation-and-growth mechanism originating near Sc-rich regions in the limit of low applied fields and nucleation-limited-switching in the high-field regime. Understanding polarization reversal pathways for these two mechanisms as well as the role of local Sc concentration on activation barriers provides design rules to identify other combinations of dopant elements, such as Zr, Mg etc. to synthesize superior AlN-based ferroelectric materials.