ABSTRACT
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by Monte-Carlo simulation and collected current calculation using parameters obtained from the electron beam induced current technique. It was shown that carbon deposition on the top of n-GaAs allows passivating the surface states and thus improving betavoltaic performance.
ABSTRACT
A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique. Structural investigations revealed that this material has the composition of â¼14 nm core Si granules inside an SiO2 shell. Photoluminescence measurements have shown that the emission spectra lie in the energy range of 0.6-1.1 eV, which is not typical of the emissions of the Si/SiO2 nanostructures reported in numerous papers. This result can be explained by the formation of energy states in the bandgap and the participation of these states in both electronic transport and photoluminescence emission. Annealing of the sample leads to a decrease in defect density, which in turn leads to quenching of the 0.6-1.1 eV photoluminescence. In this case â¼1.13 eV inter-band transitions in the Si core start to play a dominant role in radiative recombination. Thus, the possibility of controlling the photoluminescence emission over a broad wavelength range was demonstrated.
