Functionalized Thienopyrazines on NiOx Film as Self-Assembled Monolayer for Efficient Tin-Perovskite Solar Cells Using a Two-Step Method.

Three functionalized thienopyrazines (TPs), TP-MN (1), TP-CA (2), and TPT-MN (3) were designed and synthesized as self-assembled monolayers (SAMs) deposited on the NiOx film for tin-perovskite solar cells (TPSCs). Thermal, optical, electrochemical, morphological, crystallinity, hole mobility, and charge recombination properties, as well as DFT-derived energy levels with electrostatic surface potential mapping of these SAMs, have been thoroughly investigated and discussed. The structure of the TP-MN (1) single crystal was successfully grown and analyzed to support the uniform SAM produced on the ITO/NiOx substrate. When we used NiOx as HTM in TPSC, the device showed poor performance. To improve the efficiency of TPSC, we utilized a combination of new organic SAMs with NiOx HTM, the TPSC device exhibited the highest PCE of 7.7% for TP-MN (1). Hence, the designed NiOx/TP-MN (1) acts as a new model system for the development of efficient SAM-based TPSC. To the best of our knowledge, the combination of organic SAMs with anchoring CN/CN or CN/COOH groups, and NiOx HTM for TPSC has never been reported elsewhere. The TPSC device based on the NiOx/TP-MN bilayer exhibits great enduring stability for performance, retaining ~80% of its original value for shelf storage over 4000 h.

Bicyclopentadithiophene-Based Organic Semiconductor for Stable and High-Performance Perovskite Solar Cells Exceeding 22.

Well-performing organic-inorganic halide perovskites are susceptible to poor efficiency and instability due to their various defects at the interphases, grain boundaries (GBs), and surfaces. In this study, an in situ method is utilized for effectively passivating the under-coordinated Pb2+ defects of perovskite with new non-fullerene acceptors (NFAs) (INXBCDT; X = H, Cl, and Br) through their carbonyl and cyano functional groups during the antisolvent dripping process. It reveals that the bicyclopentadithiophene (BCDT) core with highly electron-withdrawing end-capping groups passivates GBs and boosts perovskite grain growth. This effective defect passivation decreases the trap density to increase the carrier recombination lifetime of the perovskite film. As a result, bromo-substituted dicyanomethylene indanone (INBr)-end-capped BCDT (INBrBCDT-b8; 3a)-passivated devices exhibit the highest power conversion efficiency (PCE) of 22.20% (vs those of 18.09% obtained for perovskite films without passivation) upon an optimized film preparation process. Note that devices treated with more soluble 2-ethylhexyl-substituted compounds (1a, 2a, and 3a) exhibit higher PCE than those treated with less soluble octyl-substituted compounds (1b, 2b, and 3b). It is also worth noting that BCDT is a cost-effective six-ring core that is easier to synthesize with a higher yield and therefore much cheaper than those with highly fused-ring cores. In addition, a long-term stability test in a glovebox for 1500 h reveals that the perovskite solar cells (PSCs) based on a perovskite absorber treated with compound 3a maintain ∼90% of their initial PCE. This is the first example of the simplest high-conjugation additive for perovskite film to achieve a PCE greater than 22% of the corresponding lead-based PSCs.

Diselenophene-Dithioalkylthiophene Based Quinoidal Small Molecules for Ambipolar Organic Field Effect Transistors.

This work presents a series of novel quinoidal organic semiconductors based on diselenophene-dithioalkylthiophene (DSpDST) conjugated cores with various side-chain lengths (-thiohexyl, -thiodecyl, and -thiotetradecyl, designated DSpDSTQ-6, DSpDSTQ-10, and DSpDSTQ-14, respectively). The purpose of this research is to develop solution-processable organic semiconductors using dicyanomethylene end-capped organic small molecules for organic field effect transistors (OFETs) application. The physical, electrochemical, and electrical properties of these new DSpDSTQs are systematically studied, along with their performance in OFETs and thin film morphologies. Additionally, the molecular structures of DSpDSTQ are determined through density functional theory (DFT) calculations and single-crystal X-ray diffraction analysis. The results reveal the presence of intramolecular S (alkyl)···Se (selenophene) interactions, which result in a planar SR-containing DSpDSTQ core, thereby promoting extended π-orbital interactions and efficient charge transport in the OFETs. Moreover, the influence of thioalkyl side chain length on surface morphologies and microstructures is investigated. Remarkably, the compound with the shortest thioalkyl chain, DSpDSTQ-6, demonstrates ambipolar carrier transport with the highest electron and hole mobilities of 0.334 and 0.463 cm2 V-1 s-1 , respectively. These findings highlight the excellence of ambipolar characteristics of solution-processable OFETs based on DSpDSTQs even under ambient conditions.

A Solution Processable Dithioalkyl Dithienothiophene (DSDTT) Based Small Molecule and Its Blends for High Performance Organic Field Effect Transistors.

The 3,5-dithiooctyl dithienothiophene based small molecular semiconductor DDTT-DSDTT (1), end functionalized with fused dithienothiophene (DTT) units, was synthesized and characterized for organic field effect transistors (OFET). The thermal, optical, electrochemical, and computed electronic structural properties of 1 were investigated and contrasted. The single crystal structure of 1 reveals the presence of intramolecular locks between S(alkyl)···S(thiophene), with a very short S-S distance of 3.10 Å, and a planar core. When measured in an OFET device compound 1 exhibits a hole mobility of 3.19 cm2 V-1 s-1, when the semiconductor layer is processed by a solution-shearing deposition method and using environmentally acceptable anisole as the solvent. This is the highest value reported to date for an all-thiophene based molecular semiconductor. In addition, solution-processed small molecule/insulating polymer (1/PαMS) blend films and devices were investigated. Morphological analysis reveals a nanoscopic vertical phase separation with the PαMS layer preferentially contacting the dielectric and 1 located on top of the stack. The OFET based on the blend comprising 50% weight of 1 exhibits a hole mobility of 2.44 cm2 V-1 s-1 and a very smaller threshold voltage shift under gate bias stress.

Thienoisoindigo (TII)-Based Quinoidal Small Molecules for High-Performance n-Type Organic Field Effect Transistors.

A novel quinoidal thienoisoindigo (TII)-containing small molecule family with dicyanomethylene end-capping units and various alkyl chains is synthesized as n-type organic small molecules for solution-processable organic field effect transistors (OFETs). The molecular structure of the 2-hexyldecyl substituted derivative, TIIQ-b16, is determined via single-crystal X-ray diffraction and shows that the TIIQ core is planar and exhibits molecular layers stacked in a "face-to-face" arrangement with short core intermolecular distances of 3.28 Å. The very planar core structure, shortest intermolecular N···H distance (2.52 Å), existence of an intramolecular non-bonded contact between sulfur and oxygen atom (S···O) of 2.80 Å, and a very low-lying LUMO energy level of -4.16 eV suggest that TIIQ molecules should be electron transporting semiconductors. The physical, thermal, and electrochemical properties as well as OFET performance and thin film morphologies of these new TIIQs are systematically studied. Thus, air-processed TIIQ-b16 OFETs exhibit an electron mobility up to 2.54 cm2 V-1 s-1 with a current ON/OFF ratio of 105-106, which is the first demonstration of TII-based small molecules exhibiting unipolar electron transport characteristics and enhanced ambient stability. These results indicate that construction of quinoidal molecule from TII moiety is a successful approach to enhance n-type charge transport characteristics.