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1.
ACS Appl Mater Interfaces ; 12(3): 4135-4142, 2020 Jan 22.
Article in English | MEDLINE | ID: mdl-31880903

ABSTRACT

A combinational effect of nanostructured crystallites and π-bonded interfaces is much attractive in solving the conflict between strength/hardness and toughness to design extrinsically superhard materials with enhanced fracture toughness and/or other properties such as tunable electronic properties. In the present work, taking the experimentally observed π-bonded interfaces in nanostructured diamond as the prototype, we theoretically investigated their stabilities, electronic structures, and mechanical strengths with special consideration of the size effect of nanocrystallites or nanolayers. It is unprecedentedly found that the π-bonded interfaces exhibit tunable electronic semiconducting properties, superior fracture toughness, and anomalously large creep-like plasticity at the cost of minor losses in strength/hardness; such unique combination is uncovered to be attributed to the ductile bridging effect of the sp2 bonds across the π-bonded interface that dominates the localized plastic flow channel. As the length scale of nanocrystallites/nanolayers is lower than a critical value, however, the first failure occurring inside nanocrystallites/nanolayers features softening and embrittling. These findings not only provide a novel insight into the unique strengthening and toughening origin observed in ultrahard nanostructured diamonds consisting of nanotwins, nanocomposites, and nanocrystallites but also highlight a unique pathway by combining the nanostructured crystallites and the strongly bonded interface to design the novel superhard materials with superior toughness.

2.
Sci Technol Adv Mater ; 15(2): 025007, 2014 Apr.
Article in English | MEDLINE | ID: mdl-27877668

ABSTRACT

The heterostructures of five monolayers B1-Ti x Zr1-x N(111), x = 1.0, 0.6, 0.4 and 0.0 (where B1 is a NaCl-type structure) with one monolayer of a Si3N4-like Si2N3 interfacial layer were investigated by means of first-principles quantum molecular dynamics and a structure optimization procedure using the Quantum ESPRESSO code. Slabs consisting of stoichiometric TiN and ZrN and random, as well as segregated, B1-Ti x Zr1-x N(111) solutions were considered. The calculations of the B1-Ti x Zr1-x N solid solutions, as well as of the heterostructures, showed that the pseudo-binary TiN-ZrN system exhibits a miscibility gap. The segregated heterostructures in which Zr atoms surround the Si y N z interface were found to be the most stable. For the Zr-rich heterostructures, the total energy of the random solid solution was lower compared to that of the segregated one, whereas for the Ti-rich heterostructures the opposite tendency was observed. Hard and super hard Zr-Ti-Si-N coatings with thicknesses from 2.8 to 3.5 µm were obtained using a vacuum arc source with high frequency stimulation. The samples were annealed in a vacuum and in air at 1200 °C. Experimental investigations of Zr-Ti-N, Zr-Ti-Si-N and Ti-Si-N coatings with different Zr, Ti and Si concentrations were carried out for comparison with results obtained from Ti x Zr 1-x N(111)/SiN y systems. During annealing, the hardness of the best series samples was increased from (39.6 ± 1.4) to 53.6 GPa, which seemed to indicate that a spinodal segregation along grain interfaces was finished. A maximum hardness of 40.8 GPa before and 55 GPa after annealing in air at 500 °C was observed for coatings with a concentration of elements of Si≽ (7-8) at.%, Ti ≽ 22 at.% and Zr ⩽ 70 at.%.

3.
Phys Rev Lett ; 97(8): 086102, 2006 Aug 25.
Article in English | MEDLINE | ID: mdl-17026318

ABSTRACT

Recently, a hardness similar to that of diamond has been reported for a quasiternary, nitride-based nanocomposite. The related, quasibinary nanocomposite "nc-TiN/a-Si3N4," which may be regarded as the prototype of the family of superhard nc-metal-N/a-Si3N4 systems, also exhibits a significant hardness enhancement. Extensive density-functional theory calculations indicate that the superhardness is related to the preferential formation of TiN(111) polar interfaces with a thin beta-Si3N4-derived layer. The strength of TiN in the 111 direction is similar to that of the weakest bonding direction in diamond. Oxygen impurities cause a significant reduction of the interface strength.

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