Tuning graphene transistors through ad hoc electrostatics induced by a nanometer-thick molecular underlayer.

We report on the modulation of the electrical properties of graphene-based transistors that mirror the properties of a few nanometers thick layer made of dipolar molecules sandwiched in between the 2D material and the SiO2 dielectric substrate. The chemical composition of the films of quinonemonoimine zwitterion molecules adsorbed onto SiO2 has been explored by means of X-ray photoemission and mass spectroscopy. Graphene-based devices are then fabricated by transferring the 2D material onto the molecular film, followed by the deposition of top source-drain electrodes. The degree of supramolecular order in disordered films of dipolar molecules was found to be partially improved as a result of the electric field at low temperatures, as revealed by the emergence of hysteresis in the transfer curves of the transistors. The use of molecules from the same family, which are suitably designed to interact with the dielectric surface, results in the disappearance of the hysteresis. DFT calculations confirm that the dressing of the molecules by an external electric field exhibits multiple minimal energy landscapes that explain the thermally stabilized capacitive coupling observed. This study demonstrates that the design and exploitation of ad hoc molecules as an interlayer between a dielectric substrate and graphene represents a powerful tool for tuning the electrical properties of the 2D material. Conversely, graphene can be used as an indicator of the stability of molecular layers, by providing insight into the energetics of ordering of dipolar molecules under the effect of electrical gating.

Current crowding issues on nanoscale planar organic transistors for spintronic applications.

The predominance of interface resistance makes current crowding ubiquitous in short channel organic electronics devices but its impact on spin transport has never been considered. We investigate electrochemically doped nanoscale PBTTT short channel devices and observe the smallest reported values of crowding lengths, found for sub-100 nm electrodes separation. These observed values are nevertheless exceeding the spin diffusion lengths reported in the literature. We discuss here how current crowding can be taken into account in the framework of the Fert-Jaffrès model of spin current propagation in heterostructures, and predict that the anticipated resulting values of magnetoresistance can be significantly reduced. Current crowding therefore impacts spin transport applications and interpretation of the results on spin valve devices.