Opto-electronic and thermophysical characteristics of A2TlAgF6 (A = Rb, Cs) for green technology applications.

Lead-free double perovskites are unique materials for transport and optoelectronic applications that use clean resources to generate energy. Using first-principle computations, this study thoroughly investigates the structural, thermoelectric, and optical attributes of A2TlAgF6 (A = Rb, Cs). Tolerance factor and formation energy estimates are used to verify that these materials exist in the cubic phase. Elastic constants with high melting temperature values are ductile when evaluated for mechanical stability using the Born stability criterion. The optical absorption band is adjusted from 2 to 4 eV via band gaps of 1.88 and 1.99 eV, as indicated by band structures. Analysis of optical properties reveals perfect absorption in the visible spectrum, whole polarization, and low optical loss. Furthermore, thermoelectric properties are assessed at 300, 500, and 700 K in the range of -0.5 to 3 eV for chemical potential (µ). The materials exhibit significant improvements in the Figure of Merit scale due to their elevated electrical conductivity, Seebeck coefficient, and extremely low thermal conductivity values.

Lead-free alternative cation (Ethylammonium) in organometallic perovskites for thermoelectric applications.

CONTEXT: Hybrid halide perovskites are gaining prominence as a promising option in the advancement of photovoltaic devices. Ethylammonium-based hybrid halide perovskites have demonstrated impressive characteristics, such as a reduced band gap, enhanced stability, and non-toxic properties. In this study, we have explored the structural, electronic, optical, and thermoelectric characteristics of Ethylammonium tin chloride. We have found that Ethylammonium tin chloride (EASnCl3) is a direct wide band gap semiconductor. Additionally, we conducted calculations for various optical parameters, including the dielectric function, absorption coefficient, and refractive index, across a photon energy spectrum ranging from 0 to 7 eV. The research highlights the exceptional qualities of EASnCl3, which exhibits a high absorption coefficient and an elevated Seeback coefficient, among other favorable attributes. These findings position it as a promising material for cost-effective photovoltaic device applications, addressing concerns related to environmental stability. METHODS: Fundamental properties based on the full-potential linearized augmented plane wave (FP-LAPW) method, this computation was performed using the WIEN2k simulation code. We utilized the exchange-correlation potentials PBE-GGA and KTB-mBJ to compute the optimized structure, density of states, and band structure of the material. In order to calculate the thermoelectric properties of the material, the Boltztrap simulation tool has been used. There are several critical absorbance parameters, including the Seeback coefficient, figure of merit, power factor, electrical conductivity, and thermal conductivity, concerning their carrier concentration and chemical potential, that have been taken into consideration.

Modeling and simulation of multifaceted properties of X2NaIO6 (X = Ca and Sr) double perovskite oxides for advanced technological applications.

CONTEXT: In this study, the authors have investigated the structural, optoelectronic, thermoelectric, and thermodynamic properties of Ca2NaIO6 and Sr2NaIO6 double perovskite oxides. Both materials exhibit semiconductor behavior with direct band gaps (Eg) of 0.353 eV and 0.263 eV, respectively. Optical parameters like absorption coefficient α(ω), reflectivity R(ω), dielectric constants, and refractive index have been calculated. The most notable absorption peaks are identified at 5.52 eV (equal to 108.33 × 104 cm-1) in the case of Ca2NaIO6 and at 11.16 eV (equivalent to 118.17 × 104 cm-1) for Sr2NaIO6. These findings suggest a promising outlook for applications in optoelectronics. Moreover, their commendably low thermal conductivity and a high figure of merit, particularly at low temperatures (100 K), indicate their effectiveness as thermoelectric materials. This analysis underscores that these materials hold potential as suitable candidates for n-type doping, making them well-suited for use in thermoelectric devices. Studying thermal properties, including thermal expansion, bulk modulus, acoustic Debye temperature, entropy, and heat capacity, contributes to understanding the materials' thermodynamic stability. The titled materials are dynamically stable. The analysis of these double perovskite materials highlights their potential across various technological applications due to their advantageous structural, electronic, optical, and transport properties, offering new possibilities in material science and technology development. METHODS: The study utilized the full potential linearized augmented plane wave (FP-LAPW) method in conjunction with density functional theory within the WIEN2k simulation code. This approach is widely recognized as one of the most dependable methods for evaluating the photovoltaic characteristics of semiconducting perovskites. The thermoelectric properties were ascertained using the rigid band approach and the constant scattering time approximation, both implemented in the BoltzTraP computational code.

Electronic structure, theoretical power conversion efficiency, and thermoelectric properties of bismuth-based alkaline earth antiperovskites.

CONTEXT: This research paper investigates the properties and potential applications of antiperovskite materials. Antiperovskites are a class of materials with a unique crystal structure, where the central atom is surrounded by a cage of anions. We review recent research on antiperovskite-based materials for energy storage, photovoltaics, catalysis, and sensors. We discovered that these materials display direct band gap semiconductors, strong absorption in the visible (VIS), ultra-violet (UV), and near infrared regions (NIR) based on their fundamental features, which is the most admirable quality that may be found in many optoelectronic devices. Both mechanical and thermodynamic stability have been confirmed for these materials. We discovered that these materials exhibit high figures of merit through the calculation of transport properties, which makes them a promising candidate for thermoelectric devices. It is anticipated that the proposed material BiPMg3, which has a theoretical efficiency of 11.5%, will make a suitable photovoltaic absorber. This paper highlights the potential of these materials for future technological advancements. METHODS: Herein, we have used most authentic techniques to compute fundamental physical properties of these antiperovskites. Full-potential linear augmented plane wave (FP-LAPW) method has been used to investigate electronic, magnetic, optical properties, and make antiperovskites attractive for a variety of applications. In light of its implementation, we have checked the theoretical power conversion efficiency by first principles spectroscopic screening methodology, and inspect the fundamental physical parameters of antiperovskites, focusing on their potential as functional materials for energy and information technologies.

Study of mechanical, optical, and thermoelectric characteristics of Ba2 XMoO6 (X = Zn, Cd) double perovskite for energy harvesting.

The double perovskites are become the emerging aspirant to fulfill the demand of energy. Therefore, the optoelectronic, elastic and transport characteristics of Ba2 XMoO6 (X = Zn, Cd) are addressed systemically. The elastic constants show the mechanical stability. The nature of Ba2 ZnMoO6 is brittle and Ba2 CdMoO6 is ductile with large values of Debye temperature covalent bonding. The electronic band structures exhibit band gaps of 2.81 and 2.98 eV, which increase their importance for optoelectronic applications. The absorption of light energy, optical loss, refractive index, polarization of light energy are addressed in the energy range zero to 14 eV. Furthermore, thermoelectric characteristics are computed against chemical potentials at 300, 600, and 900 K. The chemical potential decides the p-type nature, with holes as majority carriers. The increasing temperature increases the power factor and figure of merit. Therefore, the optoelectronic and thermoelectric characteristics reveals the importance of studied DPs for energy applications.

Progress in theoretical study of lead-free halide double perovskite Na2AgSbX6 (X = F, Cl, Br, and I) thermoelectric materials.

CONTEXT: Herein, we have studied progressively novel metal lead-free halide double perovskite renewable energy materials. Due to their potential use in electronic devices, researchers have investigated these materials with a lot of interest. From the electronic structure, we have found that these are the indirect band gap semiconductors within the range between 1.273 and 3.986 eV. Optical parameters such as dielectric constant, electrical conductivity, and absorption coefficient have also been investigated, which have shown that these materials have potential use in photovoltaics. We have checked stability issues by thermodynamic parameters and phonon spectra. We have found them thermally stable; however, the phonon spectra show their dynamical instability and except for Na2AgSbF6 and Na2AgSbI6, the remaining compounds are weak in mechanical stability. For another futuristic purpose, thermoelectric parameters such as Seebeck coefficient, power factor, and figure of merit have also been calculated, which again verifies that these materials may be very useful in thermoelectric devices. Most of the parameters have been computed for the first time. METHODS: We have performed this computational work using WIEN2k simulation code, which is based on the full-potential linearized augmented plane wave (FP-LAPW) technique. It is one of the most reliable techniques to calculate the photovoltaic properties of semiconducting perovskites. The interaction between ion-core and valence electrons was dealt with within the PAW technique as implemented in Vienna Ab initio Simulation Package (VASP).

Silicon photonics interfaced with microelectronics for integrated photonic quantum technologies: a new era in advanced quantum computers and quantum communications?

Silicon photonics is rapidly evolving as an advanced chip framework for implementing quantum technologies. With the help of silicon photonics, general-purpose programmable networks with hundreds of discrete components have been developed. These networks can compute quantum states generated on-chip as well as more extraordinary functions like quantum transmission and random number generation. In particular, the interfacing of silicon photonics with complementary metal oxide semiconductor (CMOS) microelectronics enables us to build miniaturized quantum devices for next-generation sensing, communication, and generating randomness for assembling quantum computers. In this review, we assess the significance of silicon photonics and its interfacing with microelectronics for achieving the technology milestones in the next generation of quantum computers and quantum communication. To this end, especially, we have provided an overview of the mechanism of a homodyne detector and the latest state-of-the-art of measuring squeezed light along with its integration on a photonic chip. Finally, we present an outlook on future studies that are considered beneficial for the wide implementation of silicon photonics for distinct data-driven applications with maximum throughput.

Nowotny-Juza phase KBeX (X = N, P, As, Sb, and Bi) half-Heusler compounds: applicability in photovoltaics and thermoelectric generators.

In the present research, we have considered KBeX (X = N, P, As, Sb, and Bi) half-Heusler compounds to study their inherent properties and have used FP-LAPW + lo scheme with density functional theory based WIEN2k package. The structural and band structural parameters have been explained, and various optical, thermoelectric, and thermodynamic parameters of half-Heuslers have also been analyzed in detail. The trend followed by the lattice constant of these materials approves the reliability of this investigation. The band structures show all the materials are direct band gap semiconductors except KBeN. Here, we have noticed that absorption is highest, and optical conductivity is also highest, confirming the theoretical concept and thus the accuracy of the projected outcomes. All materials (except KBeBi) show a figure of merit near unity in both p- and n-regions, and a small decay is observed with increasing temperature, which affirms their potential as thermoelectric candidates in both p- and n-regions at room temperature. Since conventional resources are limited in nature and their vanishing rate is more than their reproduction rate, hence to fulfil the high energy demand, it has become necessary to search for renewable energy resources. Herein, the values of optical and thermoelectric parameters confirm the photovoltaic and thermoelectric applications of these materials.

Calculation of electronic and optical properties of methylammonium lead iodide perovskite for application in solar cell.

Organic-inorganic metal halide perovskite materials, i.e., ABX3 (A = methylammonium, B = Pb, X = Cl, Br, I) have been proved to be outstanding for solar energy conversion. They provide a solution to renewable energy problems with good efficiency and cost-effective technology. Here, we report the initial calculations done by solving Kohn-Sham equations by the use of density function theory. The electronic structural and band gap of CH3NH3PbI3 material are obtained by using different exchange-correlation potential (PBE, PBE-sol, GGA). Further, solar cell devices with CH3NH3PbI3 as absorption layer and CdS/TiO2/ZnTe as buffer layer have been modeled; device physics is discussed and performance of solar cell structure is analyzed in terms of short circuit current density, open circuit voltage, efficiency, fill factor, and quantum efficiency. The maximum efficiency of CH3NH3PbI3 solar cell is found to be 19.6% with TiO2 buffer layer, whereas efficiency with ZnTe buffer layer is also comparable which is 19.5%. Further the effect of layer thickness and temperature are analyzed for maximum efficiency.