ABSTRACT
Correction for 'Transport mechanisms in a puckered graphene-on-lattice' by T. Xu et al., Nanoscale, 2018, 10, 7519-7525.
ABSTRACT
In recent years there has been growing interest in the electronic properties of 'few layer' graphene films. Twisted layers, different stacking and register with the substrate result in remarkable unconventional couplings. These distinctive electronic behaviours have been attributed to structural differences, even if only a few structural determinations are available. Here we report the results of a structural study of bilayer graphene on the Si-terminated SiC(0001) surface, investigated using synchrotron radiation-based photoelectron diffraction and complemented by angle-resolved photoemission mapping of the electronic valence bands. Photoelectron diffraction angular distributions of the graphene C 1s component have been measured at different kinetic energies and compared with the results of multiple scattering simulations for model structures. The results confirm that bilayer graphene on SiC(0001) has a layer spacing of 3.48 Å and an AB (Bernal) stacking, with a distance between the C buffer layer and the first graphene layer of 3.24 Å. Our work generalises the use of a versatile and precise diffraction method capable to shed light on the structure of low-dimensional materials.
ABSTRACT
Understanding the fundamental properties of graphene when its topography is patterned by the use of a compliant substrate is essential to improve the performances of graphene sensors. Here we suspend a graphene monolayer on SiO2 nanopillar arrays to form a puckered graphene-on-lattice and investigate the strain and electrical transport at the nanoscale. Despite a nonuniform strain in the graphene-on-lattice, the resistivity is governed by thermally activated transport and not the strain. We show that the high thermal activation energy results from a low charge carrier density and a periodic change of the chemical potential induced by the interaction of the graphene monolayer with the nanopillars, making the use of graphene-on-lattice attractive to further increase the electrical response of graphene sensors.
ABSTRACT
Vertically aligned MoS2 nanosheets (NSs) with exposed edges were successfully synthesized over a large area (â¼2 cm2). The NSs were grown using an ambient pressure chemical vapor deposition technique via rapid sulfurization of sputter deposited thick molybdenum films. Extensive characterization of the grown MoS2 NSs has been carried out using high resolution scanning and transmission electron microscopy (SEM & TEM). A special care was given to the TEM lamella preparation process by means of a focused ion beam to preserve the NS growth direction. The cross-section TEM measurements revealed the growth of densely packed, vertically aligned and straight MoS2 NSs. Additional characterization techniques such as atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence (PL) were used to evaluate the MoS2 NSs. These studies revealed the high crystallinity and quality of the synthesized NSs. The MoS2 NSs show visible light emission similar to mechanically exfoliated monolayer MoS2 NSs. The striking PL signal comes from the exposed edges as shown by experimental and theoretical calculations. The vertical MoS2 NSs also exhibit a hydrophobic character with a contact angle of 114°. The as-grown MoS2 NSs would be highly useful in the development of catalysis, nano-optoelectronics, gas-sensing and bio-sensing device applications.
ABSTRACT
The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C2H4) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.
ABSTRACT
The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recorded in single TBG grains showed two closely-spaced Dirac π bands associated to the two stacked layers with respective twist angles in the range 1-3°. The renormalization of velocity predicted in previous theoretical calculations for small twist angles was not observed.
ABSTRACT
Here, we report on the synthesis of MoS2 nanosheets using a simple two-step additive-free growth technique. The as-synthesized nanosheets were characterized to determine their structure and composition, as well as their optical properties. The MoS2 nanosheets were analyzed by scanning electron microscopy, transmission electron microscopy (TEM), including high-resolution scanning TEM imaging and energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and photoluminescence (PL). The as-produced MoS2 nanosheets are vertically aligned with curved edges and are densely populated. The TEM measurements confirmed that the nanosheets have the 2H-MoS2 crystal structure in agreement with the Raman results. The XPS results revealed the presence of high purity MoS2. Moreover, a prominent PL similar to mechanically exfoliated few and mono-layer MoS2 was observed for the as-grown nanosheets. For the thin (≤50 nm) nanosheets, the PL feature was observed at the same energy as that for a direct band-gap monolayer MoS2 (1.83 eV). Thus, the as-produced high-quality, large-area, MoS2 nanosheets could be potentially useful for various optoelectronic and catalysis applications.
