ABSTRACT
We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low as rho approximately 10-7 Omega cm2. Our devices show a strongly diameter-dependent breakdown voltage at reverse bias, which we explain in terms of the influence of the surrounding dielectric. We suggest that this technology is suitable for incorporating nanowire-based functionalities into future integrated circuits.
Subject(s)
Electric Wiring/instrumentation , Models, Chemical , Nanotechnology/instrumentation , Nanotubes/chemistry , Semiconductors , Silicon/chemistry , Computer Simulation , Crystallization/methods , Electric Conductivity , Equipment Design , Equipment Failure Analysis , Materials Testing , Nanotechnology/methods , Nanotubes/ultrastructure , Particle Size , Surface PropertiesABSTRACT
The contribution of elementary excitations in low-dimensional electron gases to resonant inelastic light scattering is found to be determined by interband transitions involving states at specific wave vectors. In modulation-doped GaAs/GaAlAs quantum wells, we detect only the single-particle excitations (SPE) at resonances with electron-hole transitions at the Fermi wave vector, and only plasmons at resonances with zone-center excitons. The plasmon cross section is comparable to the SPE when double electronic resonance is achieved by tuning the plasmon energy to a valence subband separation.
