Thickness dependence of the room-temperature ethanol sensor properties of Cu2O polycrystalline films.

This study investigates the fabrication process of copper thin films via thermal evaporation, with precise control over film thickness achieved throughZ-position adjustment. Analysis of the as-fabricated copper films reveals a discernible relationship between grain size (〈D〉) andZ-position, characterized by a phenomenological equation〈D〉XRDn(Z)=〈D〉0n1+32rZ2+158rZ4, which is further supported by a growth exponent (n) of 0.41 obtained from the analysis. This value aligns well with findings in the literature concerning the growth of copper films, thus underlining the validity and reliability of our experimental outcomes. The resulting crystallites, ranging in size from 20 to 26 nm, exhibit a resistivity within the range of 3.3-4.6µΩ · cm. Upon thermal annealing at 200 °C, cuprite Cu2O thin films are produced, demonstrating crystallite sizes ranging from ∼9 to ∼24 nm with increasing film thickness. The observed monotonic reduction in Cu2O crystallites relative to film thickness is attributed to a recrystallization process, indicating amorphization when oxygen atoms are introduced, followed by the nucleation and growth of newly formed copper oxide phase. Changes in the optical bandgap of the Cu2O films, ranging from 2.31 to 2.07 eV, are attributed mainly to the quantum confinement effect, particularly important in Cu2O with size close than the Bohr exciton diameter (5 nm) of the Cu2O. Additionally, correlations between refractive index and extinction coefficient with film thickness are observed, notably a linear relationship between refractive index and charge carrier density. Electrical measurements confirm the presence of a p-type semiconductor with carrier concentrations of ∼1014cm-3, showing a slight decrease with film thickness. This phenomenon is likely attributed to escalating film roughness, which introduces supplementary scattering mechanisms for charge carriers, leading to a resistivity increase, especially as the roughness approaches or surpasses the mean free path of charge carriers (8.61 nm). Moreover,ab-initiocalculations on the Cu2O crystalline phase to investigate the impact of hydrostatic strain on its electronic and optical properties was conducted. We believe that our findings provide crucial insights that support the elucidation of the experimental results. Notably, thinner cuprite films exhibit heightened sensitivity to ethanol gas at room temperature, indicating potential for highly responsive gas sensors, particularly for ethanol breath testing, with significant implications for portable device applications.

Cu-doped SnO2 nanoparticles: size and antibacterial activity investigations.

Nowadays, the use of self-cleaning surfaces is increasing globally, especially after the COVID-2019 pandemic, and the use of nanoparticles has been shown as a plausible option for this purpose. In the present study, Cu-doped SnO2 nanocrystals were successfully synthesized (in the copper content range of 0-30 mol%) using the polymeric precursor method. The structural, morphological, vibrational, and antibacterial activity were carefully studied to unveil the effect of copper ions on the properties of the hosting matrix, aiming at maximizing the usage of Cu-doped SnO2 nanocrystals. The results show fabrication of nanoparticles near their respective exciton Bohr diameter (5.4 nm for SnO2), however, monophasic SnO2 was observed up to 15 mol%. Above this limit, a secondary CuO phase was observed, as shown by the assessed X-ray diffraction (XRD), Fourier transform infrared, and Raman spectroscopy data. Furthermore, the redshift of the primary A1g vibrational mode of SnO2 is successfully described using the phonon-confinement model, demonstrating a good relationship between the Raman correlation length (L) and the crystallite size (〈D〉), the latter determined from XRD. Regarding the antibacterial activity, assessed via the disc-diffusion testing method (DDTM) while challenging two bacterial species (S. aureus and E. coli), our results suggest a rapid diffusion of the nanoparticles out of the paper disc, with a synergistic effect credited to the Sn1-xCuxO2-CuO phases contributing to the inhibition of the bacteria growth. Moreover, the DDTM data scales with cell viability, the latter analyzed using the Hill equation, from which both lethal dose 50 (LD50) and benchmark dose (BMD) were extracted.

Tuning the magnetic properties of Sn1-x-y Ce4+x Ce3+y O2 nanoparticles: an experimental and theoretical approach.

During the last decade, there was a substantial increase in the research on metal-doped oxide semiconductor nanoparticles due to advances in the engineering of nanomaterials and their potential application in spintronics, biomedicine and photocatalysis fields. In this regard, doping a nanomaterial is a powerful tool to tune its physicochemical properties. The aim of this work is to shine a new light on the role of the neighbouring elements on the oxidation state of the Ce-impurity, from both experimental and theoretical points of view. Herein, we present an accurate study of the mechanisms involved in the oxidation states of the Ce-ions during the doping process of SnO2 nanoparticles (NPs) prepared by the polymeric precursor method. X-ray diffraction measurements have displayed the tetragonal rutile-type SnO2 phase in all samples. However, the Bragg's peak (111) and (220) located at 2θ ∼29° and ∼47° evidence the formation of a secondary CeO2 phase for samples with Ce content up to 10%. X-ray absorption near-edge structure (XANES) measurements, at Ce L3 edge, were performed on the NPs as a function of Ce content. The results show, on one side, the coexistence of Ce3+ and Ce4+ states in all samples; and on the other side, a clear reduction in the Ce3+ population driven by the increase of Ce content. It is shown that this is induced by the neighboring cation, and confirmed by magnetic measurements. The monotonic damping of the Ce3+/Ce4+ ratio experimentally, was connected with theoretical calculations via density functional theory by simulating a variety of point defects composed of Ce impurities and surrounding oxygen vacancies. We found that the number of oxygen vacancies around the Ce-ions is the main ingredient to change the Ce oxidation state, and hence the magnetic properties of Ce-doped SnO2 NPs. The presented results pave the way for handling the magnetic properties of oxides through the control of the oxidation state of impurities.

Tailoring the physical and chemical properties of Sn1-xCoxO2 nanoparticles: an experimental and theoretical approach.

In this work, we present a coupled experimental and theoretical first-principles investigation on one of the more promising oxide-diluted magnetic semiconductors, the Sn1-xCoxO2 nanoparticle system, in order to see the effect of cobalt doping on the physical and chemical properties. Our findings suggest that progressive surface enrichment with dopant ions plays an essential role in the monotonous quenching of the surface disorder modes. That weakening is associated with the passivation of the oxygen vacancies as the Co excess at the surface becomes larger. Room-temperature 119Sn Mössbauer spectroscopy data analysis revealed the occurrence of a distribution of isomer shifts, related to the different non-equivalent surroundings of Sn4+ ions and the coexistence of Sn2+/Sn4+ at the particle surfaces provoked by the inhomogeneous distribution of Co ions, in agreement with the X-ray photoelectron spectroscopy measurements. Magnetic measurements revealed a paramagnetic behavior of the Co ions dispersed in the rutile-type matrix with antiferromagnetic correlations, which become stronger as the Co content is increased. Theoretical calculations show that a defect with two Co mediated by a nearby oxygen vacancy is the most likely defect. The predicted effects of this defect complex are in accordance with the experimental results.

Tunable spin and valley dependent magneto-optical absorption in molybdenum disulfide quantum dots.

Photonic quantum computer, quantum communication, quantum metrology and quantum optical technologies rely on the single-photon source (SPS). However, the SPS with valley-polarization remains elusive and the tunability of magneto-optical transition frequency and emission/absorption intensity is restricted, in spite of being highly in demand for valleytronic applications. Here we report a new class of SPSs based on carriers spatially localized in two-dimensional monolayer transition metal dichalcogenide quantum dots (QDs). We demonstrate that the photons are absorbed (or emitted) in the QDs with distinct energy but definite valley-polarization. The spin-coupled valley-polarization is invariant under either spatial or magnetic quantum quantization. However, the magneto-optical absorption peaks undergo a blue shift as the quantization is enhanced. Moreover, the absorption spectrum pattern changes considerably with a variation of Fermi energy. This together with the controllability of absorption spectrum by spatial and magnetic quantizations, offers the possibility of tuning the magneto-optical properties at will, subject to the robust spin-coupled valley polarization.

Robust effective Zeeman energy in monolayer MoS2 quantum dots.

We report a theoretical investigation on the energy spectrum and the effective Zeeman energy (EZE) in monolayer MoS2 circular quantum dots, subjected to an out-of-plane magnetic field. Interestingly, we observe the emergence of energy-locked modes, depending on the competition between the dot confinement and the applied magnetic field, for either the highest K-valley valence band or the lowest [Formula: see text]-valley conduction band. Moreover, an unusual dot-size-independent EZE behavior of the highest valence and the lowest conduction bands is found. Although the EZEs are insensitive to the variation of quantum confinement, both of them grow linearly with the magnetic field, similar to that in the monolayer MoS2 material. The EZEs along with their 'robustness' against dot confinements open opportunities of a universal magnetic control over the valley degree of freedom, for quantum dots of all sizes.

Evolution of the doping regimes in the Al-doped SnO2 nanoparticles prepared by a polymer precursor method.

In this study, we report on the structural and hyperfine properties of Al-doped SnO2 nanoparticles synthesized by a polymer precursor method. The x-ray diffraction data analysis carried out using the Rietveld refinement method shows the formation of only rutile-type structures in all samples, with decreasing of the mean crystallite size as the Al content. A systematic study of the unit cell, as well as the vicinity of the interstitial position show strong evidence of two doping regimes in the rutile-type structure of SnO2. Below 7.5 mol% doping a dominant substitutional solution of Al(+3) and Sn(4+)-ions is determined. However, the occupation of both substitutional and interstitial sites is determined above 7.5 mol% doping. These findings are in good agreement with theoretical ab initio calculations.

Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots.

A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In0.4Ga0.6 As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.

Markovian and non-Markovian light-emission channels in strained quantum wires.

We have achieved conditions to obtain optical memory effects in semiconductor nanostructures. The system is based on strained InP quantum wires where the tuning of the heavy-light valence band splitting has allowed the existence of two independent optical channels with correlated and uncorrelated excitation and light-emission processes. The presence of an optical channel that preserves the excitation memory is unambiguously corroborated by photoluminescence measurements of free-standing quantum wires under different configurations of the incoming and outgoing light polarizations in various samples. High-resolution transmission electron microscopy and electron diffraction indicate the presence of strain effects in the optical response. By using this effect and under certain growth conditions, we have shown that the optical recombination is mediated by relaxation processes with different natures: one a Markov and another with a non-Markovian signature. Resonance intersubband light-heavy hole transitions assisted by optical phonons provide the desired mechanism for the correlated non-Markovian carrier relaxation process. A multiband calculation for strained InP quantum wires was developed to account for the description of the character of the valence band states and gives quantitative support for light hole-heavy hole transitions assisted by optical phonons.