Suspended Nanochannel Resonator Arrays with Piezoresistive Sensors for High-Throughput Weighing of Nanoparticles in Solution.

As the use of nanoparticles is expanding in many industrial sectors, pharmaceuticals, cosmetics among others, flow-through characterization techniques are often required for in-line metrology. Among the parameters of interest, the concentration and mass of nanoparticles can be informative for yield, aggregates formation or even compliance with regulation. The Suspended Nanochannel Resonator (SNR) can offer mass resolution down to the attogram scale precision in a flow-through format. However, since the readout has been based on the optical lever, operating more than a single resonator at a time has been challenging. Here we present a new architecture of SNR devices with piezoresistive sensors that allows simultaneous readout from multiple resonators. To enable this architecture, we push the limits of nanofabrication to create implanted piezoresistors of nanoscale thickness (∼100 nm) and implement an algorithm for designing SNRs with dimensions optimized for maintaining attogram scale precision. Using 8-in. processing technology, we fabricate parallel array SNR devices which contain ten resonators. While maintaining a precision similar to that of the optical lever, we demonstrate a throughput of 40 000 particles per hour-an order of magnitude improvement over a single device with an analogous flow rate. Finally, we show the capability of the SNR array device for measuring polydisperse solutions of gold particles ranging from 20 to 80 nm in diameter. We envision that SNR array devices will open up new possibilities for nanoscale metrology by measuring not only synthetic but also biological nanoparticles such as exosomes and viruses.

Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction.

Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing, communications, or optical interconnects. In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions. This photodiode configuration takes advantage of the compatibility with contact process steps of silicon modulators, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics, viable for high-speed and efficient operation near 1.55 µm wavelengths. More specifically, we experimentally obtained at a reverse voltage of 1V a dark current lower than 10 nA, a responsivity higher than 1.1 A/W, and a 3 dB opto-electrical cut-off frequency over 50 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy cost-effective photonic transceivers on silicon-on-insulator substrates.

Germanium avalanche receiver for low power interconnects.

Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as -7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than -26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below -35 dBm. These results pave the way for low-power-consumption on-chip communication applications.

Thin film characterization for modeling and optimization of silver-dielectric color filters.

We investigate the most appropriate way to optically characterize the materials and predict the spectral responses of metal-dielectric filters in the visible range. Special attention is given to thin silver layers that have a major impact on the filter's spectral transmittance and reflectance. Two characterization approaches are compared, based either on single layers, or on multilayer stacks, in approaching the filter design. The second approach is preferred, because it gives the best way to predict filter characteristics. Meanwhile, it provides a stack model and dispersion relations that can be used for filter design optimization.