Spontaneous Exciton Collapse in a Strongly Flattened Ellipsoidal InSb Quantum Dot.

Electronic and excitonic states in an InSb strongly flattened ellipsoidal quantum dot (QD) with complicated dispersion law are theoretically investigated within the framework of the geometric adiabatic approximation in the strong, intermediate, and weak quantum confinement regimes. For the lower levels of the spectrum, the square root dependence of energy on QD sizes is revealed in the case of Kane's dispersion law. The obtained results are compared to the case of a parabolic (standard) dispersion law of charge carriers. The possibility of the accidental exciton instability is revealed for the intermediate quantum confinement regime. For the weak quantum confinement regime, the motion of the exciton's center-of-gravity is quantized, which leads to the appearance of additional Coulomb-like sub-levels. It is revealed that in the case of the Kane dispersion law, the Coulomb levels shift into the depth of the forbidden band gap, moving away from the quantum confined level, whereas in the case of the parabolic dispersion law, the opposite picture is observed. The corresponding selection rules of quantum transitions for the interband absorption of light are obtained. New selection rules of quantum transitions between levels conditioned by 2D exciton center of mass vertical motion quantization in a QD are revealed. The absorption threshold behavior characteristics depending on the QDs geometrical sizes are also revealed.

A time-resolved millimeter wave conductivity (TR-mmWC) apparatus for charge dynamical properties of semiconductors.

This article demonstrates a contactless, time-resolved, millimeter wave conductivity apparatus capable of measuring photoconductivity of a diverse range of materials. This cavity-less system determines the time-dependent magnitude of a sample's charge carrier density-mobility product by monitoring the response of a continuous, millimeter-wave probe beam following excitation of the sample by an ultrafast laser pulse. The probe beam is tunable from 110 GHz to 170 GHz and the sample response data can be obtained over the sub-nanosecond to millisecond time interval. This system has been tested on silicon wafers, S-I GaAs, perovskite thin films, SiO2-Ge(nc), and CdSxSe1-x nanowire samples. We demonstrate a minimum detectable photoconductance change of ∼1 µS, an estimated time resolution for conductance decay of ∼100 ps, and a dynamic range greater than 57 dB. The calibration constant of the system, needed for quantitative calculation of photoconductivity from experimental data, has been determined using silicon wafers. This system has several advantages over currently used microwave and terahertz techniques, such as facile tunability of probe frequency and substantially wider time range for study of decay kinetics, while maintaining an open sample environment that enables characterization of a wide range of sample sizes under controlled environmental conditions.

Trions in bulk and monolayer materials: Faddeev equations and hyperspherical harmonics.

The negatively T - and positively T + charged trions in bulk and monolayer semiconductors are studied in the effective mass approximation within the framework of a potential model. The binding energies of trions in various semiconductors are calculated by employing the Faddeev equation with the Coulomb potential in 3D configuration space. Results of calculations of the binding energies for T - are consistent with previous computational studies, while the T + is unbound for all considered cases. The binding energies of trions in monolayer semiconductors are calculated using the method of hyperspherical harmonics by employing the Keldysh potential. It is shown that 2D T - and T + trions are bound and the binding energy of the positive trion is always greater than for the negative trion due to the heavier effective mass of holes. Our calculations demonstrate that screening effects play an important role in the formation of bound states of trions in 2D semiconductors.

Detecting somatic mutations in genomic sequences by means of Kolmogorov-Arnold analysis.

The Kolmogorov-Arnold stochasticity parameter technique is applied for the first time to the study of cancer genome sequencing, to reveal mutations. Using data generated by next-generation sequencing technologies, we have analysed the exome sequences of brain tumour patients with matched tumour and normal blood. We show that mutations contained in sequencing data can be revealed using this technique, thus providing a new methodology for determining subsequences of given length containing mutations, i.e. its value differs from those of subsequences without mutations. A potential application for this technique involves simplifying the procedure of finding segments with mutations, speeding up genomic research and accelerating its implementation in clinical diagnostics. Moreover, the prediction of a mutation associated with a family of frequent mutations in numerous types of cancers based purely on the value of the Kolmogorov function indicates that this applied marker may recognize genomic sequences that are in extremely low abundance and can be used in revealing new types of mutations.

Cross-section measurement of charged-pion photoproduction from hydrogen and deuterium.

We have measured the differential cross section for the gamman-->pi(-)p and gammap-->pi(+)n reactions at theta(c.m.)=90 degrees in the photon energy range from 1.1 to 5.5 GeV at Jefferson Lab (JLab). The data at E(gamma) greater, similar 3.3 GeV exhibit a global scaling behavior for both pi(-) and pi(+) photoproduction, consistent with the constituent counting rule and the existing pi(+) photoproduction data. Possible oscillations around the scaling value are suggested by these new data. The data show enhancement in the scaled cross section at a center-of-mass energy near 2.2 GeV. The cross section ratio of exclusive pi(-) to pi(+) photoproduction at high energy is consistent with the prediction based on one-hard-gluon-exchange diagrams.

G(E(p))/G(M(p)) ratio by polarization transfer in e-->p --> ep-->

The ratio of the proton's elastic electromagnetic form factors, G(E(p))/G(M(p)), was obtained by measuring P(t) and P(l), the transverse and the longitudinal recoil proton polarization, respectively. For elastic e-->p-->ep-->, G(E(p))/G(M(p)) is proportional to P(t)/P(l). Simultaneous measurement of P(t) and P(l) in a polarimeter provides good control of the systematic uncertainty. The results for the ratio G(E(p))/G(M(p)) show a systematic decrease as Q2 increases from 0.5 to 3.5 GeV2, indicating for the first time a definite difference in the spatial distribution of charge and magnetization currents in the proton.