Nanoscale tip positioning with a multi-tip scanning tunneling microscope using topography images.

Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a sample, four-point resistance measurements can be performed in dedicated geometric configurations. Here, we present an alternative to the most often used scanning electron microscope imaging to infer the corresponding tip positions. After the initial coarse positioning is monitored by an optical microscope, STM scanning itself is used to determine the inter-tip distances. A large STM overview scan serves as a reference map. Recognition of the same topographic features in the reference map and in small scale images with the individual tips allows us to identify the tip positions with an accuracy of about 20 nm for a typical tip spacing of ∼1µm. In order to correct for effects such as the non-linearity of the deflection, creep, and hysteresis of the piezoelectric elements of the STM, a careful calibration has to be performed.

Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film.

One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe3 thin film. To achieve the required precision of tip positions for measuring a spin signal, a precise positioning method employing STM scans of the local topography with each individual tip is demonstrated. From the transport measurements, the spin polarisation in the topological surface states (TSS) is estimated as p ~ 0.3 - 0.6, which is close to the theoretical limit.

In-situ four-tip STM investigation of the transition from 2D to 3D charge transport in SrTiO3.

The electrical properties of SrTiO3(100) single crystals were investigated in-situ at different stages of thermal reduction by means of a 4-tip STM. Using the tips of the STM as electrical probes, distance-dependent four-point measurements were performed at the surface of the crystal at room temperature after reduction by thermal treatment. For annealing temperatures T ≤ 700 °C, charge transport is confined to a surface region <3 µm below the surface. For reduction at T ≥ 900 °C a transition from a conducting 2D sheet with insulating bulk to a system with dominant 3D bulk conductivity is found. At an intermediate reduction temperature of T = 800 °C, a regime with mixed 2D/3D contributions is observed in the distance-dependent resistance measurements. Describing the depth-dependent conductivity with an analytical N-layer model, this regime of mixed 2D/3D conductivity is evaluated quantitatively under the assumption of an exponentially decaying conductivity profile, correlated with the previously observed depth-dependent dislocation density in the sample. A non-monotonous temperature dependence of the 3D conductivity in the respective conducting layer is found and possible underlying mechanisms are discussed, particularly with regard to non-intrinsic material properties depending on details of the sample preparation.

Charge transport in GaAs nanowires: interplay between conductivity through the interior and surface conductivity.

The charge transport through GaAs nanowires, partially p-doped and partially intrinsic, is analyzed by four-point resistance profiling along freestanding nanowires using a multip-STM. The charge transport channel in the undoped segment is assigned to the surface conductivity, while the interior of the nanowire is the conductance channel in the p-doped segment. The convoluted interplay between conduction through the interior of the nanowire and surface state conduction is studied in detail. Measurements of the I-V curves along the nanowires provide the experimental basis for the proposed charge transport model for the transition of the conduction from the interior to the surface of the nanowire. A voltage drop along the surface state conduction channel leads to an upward shift of the band edges at the surface. This results, for higher applied voltages, in the removal of the depletion layer and an opening of a conductance channel between the interior of the nanowire and the surface states.

Invited Review Article: Multi-tip scanning tunneling microscopy: Experimental techniques and data analysis.

In scanning tunneling microscopy, we witness in recent years a paradigm shift from "just imaging" to detailed spectroscopic measurements at the nanoscale and multi-tip scanning tunneling microscope (STM) is a technique following this trend. It is capable of performing nanoscale charge transport measurements like a "multimeter at the nanoscale." Distance-dependent four-point measurements, the acquisition of nanoscale potential maps at current carrying nanostructures and surfaces, as well as the acquisition of I - V curves of nanoelectronic devices are examples of the capabilities of the multi-tip STM technique. In this review, we focus on two aspects: How to perform the multi-tip STM measurements and how to analyze the acquired data in order to gain insight into nanoscale charge transport processes for a variety of samples. We further discuss specifics of the electronics for multi-tip STM and the properties of tips for multi-tip STM, and present methods for a tip approach to nanostructures on insulating substrates. We introduce methods on how to extract the conductivity/resistivity for mixed 2D/3D systems from four-point measurements, how to measure the conductivity of 2D sheets, and how to introduce scanning tunneling potentiometry measurements with a multi-tip setup. For the example of multi-tip measurements at freestanding vapor liquid solid grown nanowires, we discuss contact resistances as well as the influence of the presence of the probing tips on the four point measurements.

Four-point probe measurements using current probes with voltage feedback to measure electric potentials.

We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sources of noise. Local sample potentials are measured by a software feedback loop which adjusts the corresponding tip voltage such that no current flows to the sample. The resulting tip voltage is then equivalent to the sample potential at the tip position. We implement this measurement method into a multi-tip scanning tunneling microscope setup such that potentials can also be measured in tunneling contact, allowing in principle truly non-invasive four-probe measurements. The resulting measurement capabilities are demonstrated for [Formula: see text] and [Formula: see text] samples.

Electrical resistance of individual defects at a topological insulator surface.

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. We find the largest localized voltage drop to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared with the other defects.

Low vibration laboratory with a single-stage vibration isolation for microscopy applications.

The construction and the vibrational performance of a low vibration laboratory for microscopy applications comprising a 100 ton floating foundation supported by passive pneumatic isolators (air springs), which rest themselves on a 200 ton solid base plate, are discussed. The optimization of the air spring system leads to a vibration level on the floating floor below that induced by an acceleration of 10 ng for most frequencies. Additional acoustic and electromagnetic isolation is accomplished by a room-in-room concept.

Surface and Step Conductivities on Si(111) Surfaces.

Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of σ(step)=(29±9) Ω(-1) m(-1) and to a step-free surface conductivity of σ(surf)=(9±2)×10(-6) Ω(-1)/□ for the Si(111)-(7×7) surface.

Combined frequency modulated atomic force microscopy and scanning tunneling microscopy detection for multi-tip scanning probe microscopy applications.

A method which allows scanning tunneling microscopy (STM) tip biasing independent of the sample bias during frequency modulated atomic force microscopy (AFM) operation is presented. The AFM sensor is supplied by an electronic circuit combining both a frequency shift signal and a tunneling current signal by means of an inductive coupling. This solution enables a control of the tip potential independent of the sample potential. Individual tip biasing is specifically important in order to implement multi-tip STM/AFM applications. An extensional quartz sensor (needle sensor) with a conductive tip is applied to record simultaneously topography and conductivity of the sample. The high resonance frequency of the needle sensor (1 MHz) allows scanning of a large area of the surface being investigated in a reasonably short time. A recipe for the amplitude calibration which is based only on the frequency shift signal and does not require the tip being in contact is presented. Additionally, we show spectral measurements of the mechanical vibration noise of the scanning system used in the investigations.

Selective adsorption of C60 on Ge/Si nanostructures.

Selective adsorption of C60 on nanoscale Ge areas can be achieved, while neighboring Si(111) areas remain uncovered, if the whole surface is initially terminated by Bi. Fullerene chemisorption is found at Bi vacancies which form due to partial thermal desorption of the Bi surfactant. The growth rate and temperature dependence of the C60 adsorption were measured using scanning tunneling microscopy and are described consistently by a rate equation model. The selectivity of the C60 adsorption can be traced back to an easier vacancy formation in the Bi layer on top of the Ge areas compared to the Si areas. Furthermore, it is also possible to desorb C60 from Ge areas, allowing the use of C60 as a resist on the nanoscale.

Ultra compact multitip scanning tunneling microscope with a diameter of 50 mm.

We present a multitip scanning tunneling microscope (STM) where four independent STM units are integrated on a diameter of 50 mm. The coarse positioning of the tips is done under the control of an optical microscope or scanning electron microscopy in vacuum. The heart of this STM is a new type of piezoelectric coarse approach called KoalaDrive. The compactness of the KoalaDrive allows building a four-tip STM as small as a single-tip STM with a drift of less than 0.2 nm/min at room temperature and lowest resonance frequencies of 2.5 kHz (xy) and 5.5 kHz (z). We present as examples of the performance of the multitip STM four point measurements of silicide nanowires and graphene.

A nanopositioner for scanning probe microscopy: the KoalaDrive.

We present a new type of piezoelectric nanopositioner called KoalaDrive which can have a diameter less than 2.5 mm and a length smaller than 10 mm. The new operating principle provides a smooth travel sequence and avoids shaking which is intrinsic to nanopositioners based on inertial motion with sawtooth driving signals. In scanning probe microscopy, the KoalaDrive can be used for the coarse approach of the tip or sensor towards the sample. Inserting the KoalaDrive in a piezo tube for xyz-scanning integrates a complete scanning tunneling microscope (STM) inside a 4 mm outer diameter piezo tube of <10 mm length. The use of the KoalaDrive makes the scanning probe microscopy design ultracompact and accordingly leads to a high mechanical stability. The drive is UHV, low temperature, and magnetic field compatible. The compactness of the KoalaDrive allows building a multi-tip STM as small as a single tip STM.

Voltage preamplifier for extensional quartz sensors used in scanning force microscopy.

Extensional-mode quartz resonators are being increasingly used as force sensors in dynamic scanning force microscopy or atomic force microscopy (AFM). We propose a voltage preamplifier in order to amplify the charge induced on quartz electrodes. The proposed solution has some advantages over the typically used current-to-voltage converters. First, the gain does not depend on the inner parameters of the quartz resonator, which are usually unknown for the specific resonator and may even vary during the measurement. Second, with such an amplifier a better signal-to-noise ratio can be achieved. Finally, we present AFM images of the Si(111) and the SiO(2) surfaces obtained by the voltage preamplifier with simultaneously recorded tunneling current.

Simultaneously measured signals in scanning probe microscopy with a needle sensor: frequency shift and tunneling current.

We present combined noncontact scanning force microscopy and tunneling current images of a platinum(111) surface obtained by means of a 1 MHz quartz needle sensor. The low-frequency circuit of the tunneling current was combined with a high-frequency signal of the quartz resonator enabling full electrical operation of the sensor. The frequency shift and the tunneling current were detected simultaneously, while the feedback control loop of the topography signal was fed using one of them. In both cases, the free signal that was not connected to the feedback loop reveals proportional-integral controller errorlike behavior, which is governed by the time derivative of the topography signal. A procedure is proposed for determining the mechanical oscillation amplitude by utilizing the tunneling current also including the average tip-sample work function.

Nanoscale pit formation at 2D Ge layers on Si: influence of energy and entropy.

The structural stability of two-dimensional (2D) SiGe nanostructures is studied by scanning tunneling microscopy. The formation of pits with a diameter of 2-30 nm in one atomic layer thick Ge stripes is observed. The unanticipated pit formation occurs due to an energetically driven motion of the Ge atoms out of the Ge stripe towards the Si terminated step edge followed by an entropy driven GeSi intermixing at the step edge. Using conditions where the pits coalesce results in the formation of freestanding 8 nm wide GeSi wires on Si(111).

Metal bead crystals for easy heating by direct current.

The preparation of metal bead crystals with two wires attached to the crystal is described. These crystals allow for a very easy and efficient method to heat metal single crystals by direct current heating through the connecting wires of the bead crystal. This heating of the bead crystal is sufficient to clean metal surfaces such as the surfaces of Pt and Au as confirmed by Auger spectroscopy and scanning tunneling microscopy (STM). There is no need for any ion sputtering which is conventionally used to clean metal single crystal surfaces. The bead crystals with two leads fabricated from a wide range metals and metal alloys such as Cu, Mo, Ru, Rh, Pd, Ag, Ta, W, Re, Ir, Pt, Au, PtPd, PtRh, AuAg, and PtIr can be used as general purpose metal substrates for surface science studies and other applications. Additionally, these bead crystals can be used to reshape STM tips by indentation of the tip into the soft metal in order to recover atomic resolution imaging on hard substrates.

Symmetry breaking in the growth of two-dimensional islands on Si(111).

We find that the shape of two-dimensional (2D) Si or Ge islands has a lower symmetry than the threefold symmetry of the underlying Si(111) substrate if Bi is used as a surfactant during growth. Arrow-shaped or rhomb-shaped 2D islands are observed by scanning tunneling microscopy. This symmetry breaking is explained by a mutual shift between the surface reconstructions present on the substrate and on the islands. Using the kinematic Wulff construction the growth velocities of the steps could be determined from the island shape if the nucleation center has been located by a marker technique.