Detecting Dissociation Dynamics of Phosphorus Molecular Ions by Atom Probe Tomography.

Dissociation processes involving phosphorus cations were investigated during laser-assisted atom probe tomography of crystalline indium phosphide (InP). This technique not only allows the formation of medium-sized phosphorus cations by means of femtosecond laser pulses under ultrahigh vacuum and high electric field conditions but also allows one to study the time-resolved dissociation dynamics. Data reveal the formation of cations up to P232+ and their subsequent dissociation into two smaller Pk+ cations (k > 2). The use of a time- and position-sensitive detector combined with numerical calculations provided information related to the molecule orientation, decay time, and kinetic energy release during dissociation phenomena. Results suggest that the dissociation processes are most likely due to the emission of Pk2+ cations in excited states and their subsequent decay in low field regions during their flight toward the detector. This study provides operative guidelines to obtain information on dissociation processes using a tomographic atom probe as a reaction microscope and indicates the current capabilities and limitations of such an approach.

A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy.

Laser enhanced field evaporation of surface atoms in laser-assisted Atom Probe Tomography (APT) can simultaneously excite photoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in situ micro-photoluminescence (µPL) bench that can be operated during APT analysis. The photonic atom probe instrument we have developed operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An example of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probes.

Analysis of nanoscale fluid inclusions in geomaterials by atom probe tomography: Experiments and numerical simulations.

The spatial correlation between defects in crystalline materials and trace element segregation plays a fundamental role in determining the physical and mechanical properties of a material, which is particularly important in naturally deformed materials. Herein, we combine electron backscatter diffraction, electron channelling contrast imaging, scanning transmission electron microscopy and atom probe tomography on a naturally occurring metal sulphide in an attempt to document mechanisms of element segregation in a brittle-dominated deformation regime. Within APT reconstructions, features with a high point density comprising O-rich discs stacked over As-rich spherules are observed. The combined microscopy data allow us to interpret these as nanoscale fluid inclusions. Our observations are confirmed by simulated APT experiments of core-shell particles with a core exhibiting a very low evaporation field and the shell emulating a segregated layer at the inclusion interface. Our data has significant trans-disciplinary implications to the geosciences, the material sciences, and analytical microscopy.

Spatial and Compositional Biases Introduced by Position Sensitive Detection Systems in APT: A Simulation Approach.

Due to the low capacity of contemporary position-sensitive detectors in atom probe tomography (APT) to detect multiple events, material analyses that exhibit high numbers of multiple events are the most subject to compositional biases. To solve this limitation, some researchers have developed statistical correction algorithms. However, those algorithms are only efficient when one is confronted with homogeneous materials having nearly the same evaporation field between elements. Therefore, dealing with more complex materials must be accompanied by a better understanding of the signal loss mechanism during APT experiments. By modeling the evaporation mechanism and the whole APT detection system, it may be possible to predict compositional and spatial biases induced by the detection system. This paper introduces a systematic study of the impact of the APT detection system on material analysis through the development of a simulation tool.

Dissociation of GaN2+ and AlN2+ in APT: Electronic structure and stability in strong DC field.

We investigate from a theoretical point of view the stability of AlN2+ and GaN2+ dications produced under high static electric fields like those reached in Atom Probe Tomography (APT) experiments. By means of quantum chemical calculations of the electronic structure of these molecules, we show that their stability is governed by two independent processes. On the one hand, the spin-orbit coupling allows some molecular excited states to dissociate by inter-system crossing. On the other hand, the action of the electric field lowers the potential energy barrier, which ensures the dication stability in standard conditions. We present a detailed example of field emission dynamics in the specific case of the 11Δ states for a parabolic tip, which captures the essentials of the process by means of a simplified model. We show that the dissociation dynamics of AlN2+ and GaN2+ is completely different despite the strong resemblance of their electronic structure.

Dissociation of GaN2+ and AlN2+ in APT: Analysis of experimental measurements.

The use of a tip-shaped sample for the atom probe tomography technique offers the unique opportunity to analyze the dynamics of molecular ions in strong DC fields. We investigate here the stability of AlN2+ and GaN2+ dications emitted from an Al0.25Ga0.75N sample in a joint theoretical and experimental study. Despite the strong chemical resemblance of these two molecules, we observe only stable AlN2+, while GaN2+ can only be observed as a transient species. We simulate the emission dynamics of these ions on field-perturbed potential energy surfaces obtained from quantum chemical calculations. We show that the dissociation is governed by two independent processes. For all bound states, a mechanical dissociation is induced by the distortion of the potential energy surface in the close vicinity of the emitting tip. In the specific case of GaN2+, the relatively small electric dipole of the dication in its ground 13Σ- and excited 11Δ states induces a weak coupling with the electric field so that the mechanical dissociation into Ga+ + N+ lasts for sufficient time to be observed. By contrast, the AlN2+ mechanical dissociation leads to Al2+ + N which cannot be observed as a correlated event. For some deeply bound singlet excited states, the spin-orbit coupling with lower energy triplet states gives another chance of dissociation by system inter-system crossing with specific patterns observed experimentally in a correlated time of flight map.

Electronic structure and stability of the SiO2+ dications produced in tomographic atom probe experiments.

The molecular electronic states of the SiO2+ dication have been investigated in a joint theoretical and experimental analysis. The use of a tip-shaped sample for tomographic atom probe analysis offers the unique opportunity to produce and to analyze the lifetime of some excited states of this dication. The perturbation brought by the large electric field of the polarized tip along the ion trajectory is analyzed by means of molecular dynamics simulation. For the typical electric fields used in the experiment, the lowest energy triplet states spontaneously dissociate, while the lowest energy singlet states do not. We show that the emission process leads to the formation of some excited singlet state, which dissociates by means of spin-orbit coupling with lower-energy triplet states to produce specific patterns associated with Si+ + O+ and Si2+ + O dissociation channels. These patterns are recorded and observed experimentally in a correlated time-of-flight map.

Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts.

We present atom probe analysis of 40nm wide SiGe fins embedded in SiO2 and discuss the root cause of artefacts observed in the reconstructed data. Additionally, we propose a simple data treatment routine, relying on complementary transmission electron microscopy analysis, to improve compositional analysis of the embedded SiGe fins. Using field evaporation simulations, we show that for high oxide to fin width ratios the difference in evaporation field thresholds between SiGe and SiO2 results in a non-hemispherical emitter shape with a negative curvature in the direction across, but not along the fin. This peculiar emitter shape leads to severe local variations in radius and hence in magnification across the emitter apex causing ion trajectory aberrations and crossings. As shown by our experiments and simulations, this translates into unrealistic variations in the detected atom densities and faulty dimensions in the reconstructed volume, with the width of the fin being up to six-fold compressed. Rectification of the faulty dimensions and density variations in the SiGe fin was demonstrated with our dedicated data treatment routine.

An analytical model accounting for tip shape evolution during atom probe analysis of heterogeneous materials.

An analytical model describing the field evaporation dynamics of a tip made of a thin layer deposited on a substrate is presented in this paper. The difference in evaporation field between the materials is taken into account in this approach in which the tip shape is modeled at a mesoscopic scale. It was found that the non-existence of sharp edge on the surface is a sufficient condition to derive the morphological evolution during successive evaporation of the layers. This modeling gives an instantaneous and smooth analytical representation of the surface that shows good agreement with finite difference simulations results, and a specific regime of evaporation was highlighted when the substrate is a low evaporation field phase. In addition, the model makes it possible to calculate theoretically the tip analyzed volume, potentially opening up new horizons for atom probe tomographic reconstruction.

HAADF-STEM atom counting in atom probe tomography specimens: Towards quantitative correlative microscopy.

The geometry of atom probe tomography tips strongly differs from standard scanning transmission electron microscopy foils. Whereas the later are rather flat and thin (<20 nm), tips display a curved surface and a significantly larger thickness. As far as a correlative approach aims at analysing the same specimen by both techniques, it is mandatory to explore the limits and advantages imposed by the particular geometry of atom probe tomography specimens. Based on simulations (electron probe propagation and image simulations), the possibility to apply quantitative high angle annular dark field scanning transmission electron microscopy to of atom probe tomography specimens has been tested. The influence of electron probe convergence and the benefice of deconvolution of electron probe point spread function electron have been established. Atom counting in atom probe tomography specimens is for the first time reported in this present work. It is demonstrated that, based on single projections of high angle annular dark field imaging, significant quantitative information can be used as additional input for refining the data obtained by correlative analysis of the specimen in APT, therefore opening new perspectives in the field of atomic scale tomography.

Modeling Atom Probe Tomography: A review.

Improving both the precision and the accuracy of Atom Probe Tomography reconstruction requires a correct understanding of the imaging process. In this aim, numerical modeling approaches have been developed for 15 years. The injected ingredients of these modeling tools are related to the basic physic of the field evaporation mechanism. The interplay between the sample nature and structure of the analyzed sample and the reconstructed image artefacts have pushed to gradually improve and make the model more and more sophisticated. This paper reviews the evolution of the modeling approach in Atom Probe Tomography and presents some future potential directions in order to improve the method.

Role of the resistivity of insulating field emitters on the energy of field-ionised and field-evaporated atoms.

In order to improve the accuracy of laser atom probe analyses, it is important to understand all the physical processes induced by the combination of the high electrical field and the femtosecond laser beam during field evaporation. New information can be accessed from the energy of evaporated surface atoms or field-ionised atoms of an imaging gas. In order to study the ions energy, we combine La-APT and FIM analyses in a new experimental setup equipped with electrostatic lenses. We report measurements for semiconductors and oxides and we study the influence of the illumination conditions (laser power and wavelength), the evaporation rate, the sample geometry and the tip preparation processes. The results are discussed taking into account the resistive properties of non-metallic samples and the photo-stimulated conductivity. This work clarifies the role of the laser and DC field in the energy deficit of field evaporated ions.

3D analysis of advanced nano-devices using electron and atom probe tomography.

The structural and chemical properties of advanced nano-devices with a three-dimensional (3D) architecture have been studied at the nanometre scale. An original method has been used to characterize gate-all-around and tri-gate silicon nanowire transistor by combining electron tomography and atom probe tomography (APT). Results show that electron tomography is a well suited method to determine the morphological structure and the dimension variations of devices provided that the atomic number contrast is sufficient but without an absolute chemical identification. APT can map the 3D chemical distribution of the atoms in devices but suffers from strong distortions in the dimensions of the reconstructed volume. These may be corrected using a simple method based on atomic density correction and electron tomography data. Moreover, this combination is particularly useful in helping to understand the evaporation mechanisms and improve APT reconstructions. This paper demonstrated that a full 3D characterization of nano-devices requires the combination of both tomography techniques.

A model to predict image formation in Atom probe Tomography.

A model devoted to the modelling of the field evaporation of a tip is presented in this paper. The influence of length scales from the atomic scale to the macroscopic scale is taken into account in this approach. The evolution of the tip shape is modelled at the atomic scale in a three dimensional geometry with cylindrical symmetry. The projection law of ions is determined using a realistic representation of the tip geometry including the presence of electrodes in the surrounding area of the specimen. This realistic modelling gives a direct access to the voltage required to field evaporate, to the evolving magnification in the microscope and to the understanding of reconstruction artefacts when the presence of phases with different evaporation fields and/or different dielectric permittivity constants are modelled. This model has been applied to understand the field evaporation behaviour in bulk dielectric materials. In particular the role of the residual conductivity of dielectric materials is addressed.

Pragmatic reconstruction methods in atom probe tomography.

Data collected in atom probe tomography have to be carefully analysed in order to give reliable composition data accurately and precisely positioned in the probed volume. Indeed, the large analysed surfaces of recent instruments require reconstruction methods taking into account not only the tip geometry but also accurate knowledge of geometrical projection parameters. This is particularly crucial in the analysis of multilayers materials or planar interfaces. The current work presents a simulation model that enables extraction of the two main projection features as a function of the tip and atom probe instrumentation geometries. Conversely to standard assumptions, the image compression factor and the field factor vary significantly during the analysis. An improved reconstruction method taking into account the intrinsic shape of a sample containing planar features is proposed to overcome this shortcoming.

Application of Delaunay tessellation for the characterization of solute-rich clusters in atom probe tomography.

This work presents an original method for cluster selection in Atom Probe Tomography designed to be applied to large datasets. It is based on the calculation of the Delaunay tessellation generated by the distribution of atoms of a selected element. It requires a single input parameter from the user. Furthermore, no prior knowledge of the material is needed. The sensitivity of the proposed Delaunay cluster selection is demonstrated by its application on simulated APT datasets. A strong advantage of the proposed methodology is that it is reinforced by the availability of an analytical model for the distribution of Delaunay cells circumspheres, which is used to control the accuracy of the cluster selection procedure. Another advantage of the Delaunay cluster selection is the direct calculation of a sharp envelope for each identified cluster or precipitate, which leads to the more appropriate morphology of the objects as they are reconstructed in the APT dataset.

Investigation of wüstite (Fe1-xO) by femtosecond laser assisted atom probe tomography.

In this paper, we report results obtained from laser assisted three-dimensional (3-D) atom probe tomography (APT) on wüstite (Fe(1-x)O). Oxides are generally insulating and hence hard to analyse in conventional electrical assisted APT. To overcome this problem, femtosecond laser pulses are used instead of voltage pulses. Here we discuss some aspects of pulsed laser field evaporation and optimization of parameters to achieve better chemical accuracy.

Optical and thermal processes involved in ultrafast laser pulse interaction with a field emitter.

In the interaction between ultrafast laser pulses and a field emitter both optical and thermal processes are involved. In this paper, these physical process, and their timescales, are experimentally explored. Simple models are proposed to explain the observed experimental behaviour, and the influence of various parameters are investigated. In the case of optical processes, it is shown that the optical field is greatly enhanced at the tip apex, and that field evaporation could be induced by an optical non-linear effect called optical rectification. In the case of thermal processes, it is shown that the temperature rise because of light absorption can be determined and that the cooling process of the tip surface can be studied by pump probe measurements.

Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation.

Three dimension atom probe analysis of semiconductor materials requires the ability to bring high electric field at the specimen apex to remove atoms. It is shown that, if voltage pulses are used to evaporate doped silicon, the resistivity of the material has to be lower than about 10(2) Omega cm. To overcome this problem, voltage pulses have been replaced by femtosecond laser pulses. The laser pulses give rise to field evaporation by two processes. Both thermal and optical field evaporation have been observed. Thermal evaporation takes place at high laser intensities and with short wavelengths while the evaporation is assisted by the rectification of the optical field for lower intensities and in the infrared domain. Using the optical field evaporation, reproducible and good analyses in term of spatial and mass resolutions could be conducted.

Application of Fourier transform and autocorrelation to cluster identification in the three-dimensional atom probe.

Because of the increasing number of collected atoms (up to millions) in the three-dimensional atom probe, derivation of chemical or structural information from the direct observation of three-dimensional images is becoming more and more difficult. New data analysis tools are thus required. Application of a discrete Fourier transform algorithm to three-dimensional atom probe datasets provides information that is not easily accessible in real space. Derivation of mean particle size from Fourier intensities or from three-dimensional autocorrelation is an example. These powerful methods can be used to detect and image nano-segregations. Using three-dimensional 'bright-field' imaging, single nano-segregations were isolated from the surrounding matrix of an iron-copper alloy. Measurement of the inner concentration within clusters is, therefore, straightforward. Theoretical aspects related to filtering in reciprocal space are developed.