Magnetic-field-induced phase separation via spinodal decomposition in epitaxial manganese ferrite thin films.

In this study, we report about the occurrence of phase separation through spinodal decomposition (SD) in spinel manganese ferrite (Mn ferrite) thin films grown by Dynamic Aurora pulsed laser deposition. The driving force behind this SD in Mn ferrite films is considered to be an ion-impingement-enhanced diffusion that is induced by the application of magnetic field during film growth. The phase separation to Mn-rich and Fe-rich phases in Mn ferrite films is confirmed from the Bragg's peak splitting and the appearance of the patterned checkerboard-like domain in the surface. In the cross-sectional microstructure analysis, the distribution of Mn and Fe-signals alternately changes along the lateral (x and y) directions, while it is almost homogeneous in the z-direction. The result suggests that columnar-type phase separation occurs by the up-hill diffusion only along the in-plane directions. The propagation of a quasi-sinusoidal compositional wave in the lateral directions is confirmed from spatially resolved chemical composition analysis, which strongly demonstrates the occurrence of phase separation via SD. It is also found that the composition of Mn-rich and Fe-rich phases in phase-separated Mn ferrite thin films deposited at higher growth temperature and in situ magnetic field does not depend on the corresponding average film composition.

Charge screening strategy for domain pattern control in nano-scale ferroelectric systems.

Strain engineering is a widespread strategy used to enhance performance of devices based on semiconductor thin films. In ferroelectrics strain engineering is used to control the domain pattern: When an epitaxial film is biaxially compressed, e.g. due to lattice mismatch with the substrate, the film displays out-of-plane, often strongly enhanced polarization, while stretching the film on the substrate results in in-plane polarization. However, this strategy is of a limited applicability in nanorods because of the small rod/substrate contact area. Here we demonstrate another strategy, in which the polar axis direction is controlled by charge screening. When charge screening is maintained by bottom and top metallization, the nanorods display an almost pure c-domain configuration (polarization perpendicular to the substrate); when the sidewalls of the nanorods are metallized too, a-domain formation prevails (polarization parallel to the substrate). Simulations of the depolarization fields under various boundary conditions support the experimental observations. The employed approach can be expanded to other low-dimensional nano-scale ferroelectric systems.

Strain engineering effects on electrical properties of lead-free piezoelectric thin films on Si wafers.

Using radio frequency - magnetron sputtering, calcium-doped barium zirconate titanate ((Ba(0.85)Ca(0.15))(Zr(0.1)Ti(0.9))O(3), BCZT) thin films were deposited on Si wafers with different bottom electrodes. The obtained BCZT thin film on a lanthanum nickel oxide (LNO) electrode had a highly c-axis preferred orientation, while the BCZT thin film on a Pt bottom electrode had (111) preferred orientation. Furthermore, the out-of-plane lattice constant of the BCZT on LNO/Si was 3.4% larger than that of the reported bulk material because of the compressive thermal stress from LNO with a large thermal expansion coefficient. This compressive thermal stress engenders an increase of the Curie temperature. The local piezoelectric response of the BCZT thin film on a LNO/Si structure was measured by piezoresponse force microscope.

Phase diagram and piezoelectric response of (Ba1-xCax)(Zr0.1Ti0.9)O3 solid solution.

We report the phase diagram of (Ba1-xCax)(Zr0.1Ti0.9)O3 solid solution. It is found that substitution of smaller Ca ions for Ba ions can slightly increase the cubic-tetragonal (T) para-ferroelectric phase transition temperature and strongly decrease the T-orthorhombic (O) and O-rhombohedral (R) transition. This unique ferroelectric phase evolution is attributed to Ca off-centering effects. More importantly, lowering of the T-O or O-R phase transitions allows us to prepare the piezoelectric ceramics with a strain response as high as S/E ≈ 800 pm V(-1) (E = 10 kV cm(-1)) over a wide range of compositions with x ≈ 0.1-0.18 at room temperature, which may be interesting for piezoelectric applications.

Fabrication of two-dimensional close-packed shell structure in ceramic thin films.

TiO2 thin films with a periodical two-dimensional close-packed hemispherical structure were prepared on Si substrates using pulsed laser deposition and close-packed monolayer polystyrene colloidal crystals as a template. Compared with conventional methods, which use a top-down approach, this route supports low-cost production of a periodic structure. Additionally, it is applicable to various ceramics for use in applications related to photonic crystals, surface self-cleaning materials, data storage media, bioassays, and so on.

Magnetic and optical properties of MgAl2O4-(Ni0.5Zn0.5)Fe2O4 thin films prepared by pulsed laser deposition.

Thin films composed of MgAl2O4 and (Ni0.5Zn0.5)Fe2O4 ([MA(100-x)-NZFx] films) were grown on fused SiO2 substrates by pulsed laser deposition. X-ray diffraction measurements revealed that the films were polycrystalline, and that their lattice constant varied linearly with composition, indicating the formation of a solid solution. The film with x=60 was paramagnetic and those with x ≥ 70 were ferromagnetic. The films had a transparency above 75% in the visible range, but the transparency decreased with the x value. The optical band gaps were 2.95, 2.55, 2.30 and 1.89 eV for x=20, 40, 60, 80 and 100, respectively. The Faraday rotation angle increased with x in the visible range, and the film with x=70 exhibited a value of 2000 degrees cm-1 at 570 nm, which is comparable to the rotation angle of Y3Fe5O12. Owing to their high transparency, which extends into the visible range, the [MA(100-x)-NZFx] films can be used in novel magneto-optical devices.