ABSTRACT
Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap.
ABSTRACT
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.
ABSTRACT
A method is described for measuring ion energy distributions using a commercially available, combined energy analyzer/mass spectrometer. The distributions were measured at an electrode located adjacent to pulsed, electron beam-generated plasmas produced in argon. The method uses energy-dependent tuning and was tested for various plasma conditions. The results indicate an improved collection efficiency of low-energy ions when compared to conventional approaches in measuring ion energy distributions.
Subject(s)
Electrodes , Gases/chemistry , Ions , Mass Spectrometry/instrumentation , Radiometry/instrumentation , Computer-Aided Design , Energy Transfer , Equipment Design , Equipment Failure Analysis , Hot Temperature , Mass Spectrometry/methods , Radiometry/methods , Reproducibility of Results , Sensitivity and SpecificityABSTRACT
Time-resolved ion flux and energy distributions were measured at an electrode located adjacent to pulsed, electron-beam-generated plasmas in argon and oxygen. Temporal variations in the incident Ar+, O+, and O(2)+ energy and flux were correlated to changes in the electron temperature and plasma density. The decay time of the oxygen plasma is found to be shorter than that of the argon plasma, which is understood by considering the different loss mechanisms of each ion species.
