ABSTRACT
The antimony-doped half-Heusler thermoelectric bulk TiNiSb0.05Sn0.95 was prepared via ultra-fast 4.5 min microwave synthesis, cold-press forming and 20 min microwave pressureless sintering. The electrical properties i.e. the Seebeck coefficient (S), electrical resistivity (ρ), and carrier concentration (n) and mobility (µ) were measured on a Seebeck coefficient/resistance analysis system (S/RAs) and Hall effect measurement system (HEMS), respectively. The thermal conductivity (κ) was measured on a laser flash thermal analyzer (LFA). The results show that a high purity single phase was obtained after microwave sintering. The electrical resistivity is 2.70-5.33 µΩ m at temperatures ranging from â¼300 to 773 K. The highest power factor of 4042 µW m-1 K-2 was achieved at 473 K. The microstructure analyses show that numerous circular intercrystalline pores caused by microwave sintering are present within the TiNiSn grains. The lattice and total thermal conductivity are 1.76-3.77 and 4.66-5.98 W m-1 K-1. The highest thermoelectric figure of merit of 0.44 was achieved at 623 K.
