ABSTRACT
The Si-based integrated circuits industry has been developing for more than half a century, by focusing on the scaling-down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material and device technologies. Resistive memory is a promising candidate for in-memory computing and energy-efficient synaptic devices that can satisfy the computational demands of the future applications. However, poor cycle-to-cycle and device-to-device uniformities hinder its mass production. 2D materials, as a new type of semiconductor, is successfully employed in various micro/nanoelectronic devices and have the potential to drive future innovation in resistive memory technology. This review evaluates the potential of using the thinnest advanced materials, that is, monolayer 2D materials, for memristor or memtransistor applications, including resistive switching behavior and atomic mechanism, high-frequency device performances, and in-memory computing/neuromorphic computing applications. The scaling-down advantages of promising monolayer 2D materials including graphene, transition metal dichalcogenides, and hexagonal boron nitride are presented. Finally, the technical challenges of these atomic devices for practical applications are elaborately discussed. The study of monolayer-2D-material-based resistive memory is expected to play a positive role in the exploration of beyond-Si electronic technologies.
ABSTRACT
Metal halides have attracted increasing attention owing to their outstanding optoelectronic properties and tunable emission characteristics. Among these, low-dimensional metal halides have emerged as a novel and efficient luminescent material, primarily attributed to their broad spectral emission induced by self-trapped excitons (STEs). However, achieving highly efficient deep red and near-infrared (NIR) emission in metal halides remains a challenge. In this study, we report a novel zero-dimensional (0D) copper-based metal halide [Na2(DMSO)8]Cu4Br6 as the NIR light source, which exhibits a full width at half-maximum (FWHM) of 195 nm peaking at 685 nm, an impressive quantum efficiency of 68% and a large Stokes shift of 299 nm. Through comprehensive spectral analysis and meticulous data calculations, we substantiate that the emission originates from STEs formed within the 0D structure. Furthermore, we demonstrate the potential application of [Na2(DMSO)8]Cu4Br6 as an invisible light source in night vision by combining it with a commercially available 365 nm ultraviolet (UV) chip. This work not only enriches the family of low-dimensional metal halide materials but also inspires the potential of low-dimensional metal halides in night vision applications.
ABSTRACT
The non-volatile resistive switching process of a MoS2based atomristor with a vertical structure is investigated by first-principles calculations. It is found that the monolayer MoS2with a S vacancy defect (VS) could maintain an insulation characteristic and a high resistance state (HRS) is remained. As an electrode metal atom is adsorbed on the MoS2monolayer, the semi-conductive filament is formed with the assistance ofVS. Under this condition, the atomristor presents a low resistance state (LRS). The ON state current of this semi-filament is increased close to two orders of magnitude larger than that without the filament. The energy barrier for an Au-atom to penetrate the monolayer MoS2viaVSis as high as 6.991 eV. When it comes to a double S vacancy (VS2), the energy barrier is still amounted to 3.554 eV, which manifests the bridge-like full conductive filament cannot form in monolayer MoS2based atomristor. The investigation here promotes the atomic level understanding of the resistive switching properties about the monolayer MoS2based memristor. The physics behind should also work in atomristors based on other monolayer transition-metal dichalcogenides, like WSe2and MoTe2. The investigation will be a reference for atomristor-device design or optimization.
ABSTRACT
X-ray detection and imaging technology has been rapidly developed for various fields since 1895, offering great opportunities to scientific and industrial communities. Particularly, flexible X-ray detectors have drawn numerous attention in medical-related applications, solving the uniform issues of traditional rigid X-ray detectors. Out of all the potential materials, metal halide perovskites (MHPs) have been emerged as excellent candidates as flexible X-ray scintillators and detectors owing to the advantages including low temperature solution processable, strong X-ray absorption coefficient, large mobility lifetime product and tunable bandgap. In this review, the recent advances of MHP-based flexible X-ray detectors are comprehensively summarized, focusing on the scalable synthesis technologies of materials and diverse device architectures, and covering both direct and indirect X-ray detection. A brief outlook that highlights the current challenges impeding the commercialization of flexible MHP-based X-ray detectors is also included with possible solutions to those problem being provided.
ABSTRACT
Rb2CuBr3 nanocrystals with a high photoluminescence quantum yield (PLQY) of 75% were synthesized and then further mixed with polymethyl methacrylate to form flexible scintillators. The scintillators maintain a high PLQY, even after bending for 2000 cycles and storing in air for 28 days. X-Ray imaging of targeted objects was demonstrated based on the flexible scintillators, which exhibits a detection limit of 63 nGyair s-1 and a spatial resolution of 27.9 lp mm-1.
