Extraction of Pithecellobium clypearia Benth polysaccharides by dual-frequency ultrasound-assisted extraction: Structural characterization, antioxidant, hypoglycemic and anti-hyperlipidemic activities.

In this research, the extraction process of polysaccharides from Pithecellobium clypearia Benth (PCBPs) was optimized using dual-frequency ultrasound-assisted extraction (DUAE). The biological activities of PCBPs were investigated by in vitro antioxidant, hypoglycemic, and anti-hyperlipidemic assay. High-performance anion-exchange chromatography, high-performance gel permeation chromatography, SEM, UV-Vis spectroscopy, and FT-IR spectra were used to analyze the monosaccharide composition, molecular weight, microscopic morphology, and characteristic structure of PCBPs. The results showed that the maximum extraction rate of PCBPs was 9.90 ± 0.16% when the ultrasonic time was 8 min, the liquid-to-material ratio was 32 mL/g, and the ultrasonic power was 510 W. The PCBPs also possessed excellent in vitro antioxidant, hypoglycemic, and anti-hyperlipidemic activities. In addition, the average molecular weight of PCBPs was 15.07 kDa. PCBPs consisted of rhamnose, arabinose, galactose, glucose, xylose, mannose, and glucuronic acid, with the molar ratios of 11.07%, 18.54%, 48.17%, 10.44%, 4.62%, 4.96%, and 2.20%, respectively. Moreover, the results of SEM showed that PCBPs mainly showed a fine spherical mesh structure. The above studies provided a valuable theoretical basis for the subsequent in-depth study of PCBPs.

Ti3 C2 Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors.

Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3 C2 Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off-state current (IOFF ) of 10-7 mA mm-1 , a record high ION /IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV dec-1 . This work shows the great potential of MXene films as gate electrodes in wide-bandgap semiconductor devices.

Quasi-Epitaxial Growth of ß-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors.

The epitaxial growth of technically important ß-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of ß-Ga2O3(-201) thin films on flexible CeO2(001)-buffered Hastelloy tape. The results indicate that CeO2(001) has a small bi-axial lattice mismatch with ß-Ga2O3(-201), inducing simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated on the epitaxial ß-Ga2O3-coated tape. Measurements reveal that the photodetectors have a responsivity of 4 × 104 mA/W, with an on/off ratio reaching 1000 under 254 nm incident light and 5 V bias voltage. Such a photoelectrical performance is within the mainstream level of ß-Ga2O3-based photodetectors using conventional rigid single-crystal substrates. More importantly, it remained robust against more than 20,000 bending test cycles. Moreover, the technique paves the way for the direct in situ epitaxial growth of other flexible oxide semiconductor devices in the future.

Hydrophilicity Reinforced Adhesion of Anodic Alumina Oxide Template Films to Conducting Substrates for Facile Fabrication of Highly Ordered Nanorod Arrays.

Arrays of ordered nanorods are of special interest in many fields. However, it remains challenging to obtain such arrays on conducting substrates in a facile manner. In this article, we report the fabrication of highly ordered and vertically standing nanorod arrays of both metals and semiconductors on Au films and indium tin oxide glass substrates without an additional layering. In this approach, following the simple hydrophilic treatment of an anodic aluminum oxide (AAO) membrane and conducting substrates, the AAO membrane was transferred onto the modified substrates with excellent adhesion. Subsequently, nanorod arrays of various materials were electrodeposited on the conducting substrates directly. This method avoids any expensive and tedious lithographic and ion milling process, which provides a simple yet robust route to the fabrication of arrays of 1D materials with high aspect ratio on conducting substrates, which shall pave the way for many practical applications in a range of fields.

[Beyond the psychometric assessments: the evaluation of patients with Alzheimer's disease].

Alzheimer's disease is a neurodegenerative illness. The Mini Mental State Examination (MMSE), Cognitive Abilities Screening Instrument (CASI) and Clinical Dementia Rating (CDR) are applied to assess whether a person suffers Alzheimer's disease and determine its severity. There are many confounding factors within those assessments, medical professionals need to bear in mind the pitfalls when evaluating the data and the patient.